Structure determination in a new type of amorphous molecular solids with different nonlinear optical properties: a comparative structural analysis.

The microscopic structures of two amorphous molecular solids with extremely nonlinear optical properties have been studied. They consist of organotetrel chalcogenide clusters with the chemical formula [(RSn)4S6]. The basic molecular building blocks are adamantane-like {Sn4S6} cores with organic ligands R attached to the Sn atoms. While the material equipped with R=naphthyl generates frequency doubling upon irradiation with a simple infrared laser diode, the material decorated with R=phenyl responds by emitting brilliant white light. The structural differences were investigated using x-ray scattering and extended x-ray absorption fine structure combined with molecular Reverse Monte Carlo. Transmission electron microscopy and scanning precession electron diffraction were used to examine structural differences from mesoscopic down to microscopic scales. Characteristic differences were found on all scales. While close core-to-core distances between {Sn4S6} cluster cores and molecular distortions are found in the white light emitting material, undistorted molecules and significantly larger core distances characterize the material showing frequency doubling. Here however, results of scanning precession electron diffraction reveal the formation of nanocrystalline structures in the amorphous matrix, which we identify as cause for the suppression of white light emission.

Quantitative composition determination by ADF-STEM at a low-angular regime: a combination of EFSTEM and 4DSTEM.

High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) is a valuable method for composition determination of nanomaterials. However, light elements do not scatter efficiently into the scattering angles employed for HAADF-STEM which hinders the composition determination of material systems containing light elements by HAADF-STEM. This makes the usage of lower scattering angles favourable. Moreover, static atomic displacements (SADs) caused by the small covalent radius of the substituting light elements in semiconductor alloys increase the scattering intensity at low angles. Nevertheless, at low angles, a quantitative match between complementary image simulations and experiments is not straight forward, since e.g. inelastic scattering and correlated phonon movement is often neglected in simulations. In this study, we establish a method to quantify material systems containing light elements at low angles by resolving the remaining sources of discrepancy. An outstanding agreement between simulations and experiments is achieved by using a combination of an in-column energy filter and a fast pixelated detector. By applying this method to GaNxAs1-x quantum wells, a good agreement of the TEM results with results from high-resolution x-ray diffraction is obtained. The method developed enables the nanoscale analysis of functional materials containing light elements, especially in the presence of SADs.

Optimization of imaging conditions for composition determination by annular dark field STEM.

Quantitative scanning transmission electron microscopy (STEM) allows composition determination for nanomaterials at an atomic scale. To improve the accuracy of the results obtained, optimized imaging parameters should be chosen for annular dark field imaging. In a simulation study, we investigate the influence of imaging parameters on the accuracy of the composition determination with the example of ternary III-V semiconductors. It is shown that inner and outer detector angles and semi-convergence angle can be optimized, also in dependence on specimen thickness. Both, a minimum sampling of the image and a minimum electron dose are required. These findings are applied experimentally by using a fast pixelated detector to allow free choice of detector angles.

Composition determination for quaternary III-V semiconductors by aberration-corrected STEM.

Quantitative scanning transmission electron microscopy (STEM) is a powerful tool for the characterization of nano-materials. Absolute composition determination for ternary III-V semiconductors by direct comparison of experiment and simulation is well established. Here, we show a method to determine the composition of quaternary III-V semiconductors with two elements on each sub lattice from the intensities of one STEM image. As an example, this is applied to (GaIn)(AsBi). The feasibility of the method is shown in a simulation study that also explores the influence of detector angles and specimen thickness. Additionally, the method is applied to an experimental STEM image of a (GaIn)(AsBi) quantum well grown by metal organic vapour phase epitaxy. The obtained concentrations are in good agreement with X-ray diffraction and photoluminescence results.

Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM.

Scanning transmission electron microscopy (STEM) is a suitable method for the quantitative characterization of nanomaterials. For an absolute composition determination on an atomic scale, the thickness of the specimen has to be known locally with high accuracy. Here, we propose a method to determine both thickness and composition of ternary III-V semiconductors locally from one STEM image as shown for the example material systems Ga(AsBi) and (GaIn)As. In a simulation study, the feasibility of the method is proven and the influence of specimen thickness and detector angles used is investigated. An application to an experimental STEM image of a Ga(AsBi) quantum well grown by metal organic vapour phase epitaxy yields an excellent agreement with composition results from high resolution X-ray diffraction.

Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM.

This paper presents a comprehensive investigation of an extended method to determine composition of materials by scanning transmission electron microscopy (STEM) high angle annular darkfield (HAADF) images and using complementary multislice simulations. The main point is to understand the theoretical capabilities of the algorithm and address the intrinsic limitations of using STEM HAADF intensities for composition determination. A special focus is the potential of the method regarding single-atom accuracy. All-important experimental parameters are included into the multislice simulations to ensure the best possible fit between simulation and experiment. To demonstrate the capabilities of the extended method, results for three different technical important semiconductor samples are presented. Overall the method shows a high lateral resolution combined with a high accuracy towards single-atom accuracy.

Three-dimensional structure of antiphase domains in GaP on Si(0 0 1).

Antiphase domains are three-dimensional crystal defects commonly arising at the interface of III-V semiconductors and Si. While control over their formation has been achieved, the geometry of the antiphase domain itself that is separated from the mainphase of the crystal by the so-called antiphase boundary, has not yet been fully understood. In this work, we first investigate the interface between GaP and Si itself by cross-sectional scanning tunneling microscopy (XSTM) to reveal possible intermixing within an 8 monolayers wide region. Furthermore, we present an extensive analysis combining transmission electron microscopy and XSTM to elucidate the shape of antiphase domains in GaP. To create a true-to-scale, three-dimensional model of an antiphase domain, firstly, plan-view transmission electron microscopy images are drawn on. Subsequently, the progression of many antiphase boundaries through the GaP crystal as viewed from the (1 1 0) and (1 [Formula: see text] 0) cleavage planes is analyzed all the way down to the atomic level by means of XSTM. This enables a detailed analysis of the shape and physical dimensions of the antiphase domains. A typical measured extension in growth directions is found to be a maximum of 60 nm and the maximum measured extension of the base plane in [[Formula: see text] 1 0] and [1 1 0] directions is about 160 nm and 50 nm, respectively. They appear as pyramids with anisotropic base planes whose side facets kink many times.

Second-harmonic generation as a probe for structural and electronic properties of buried GaP/Si(0 0 1) interfaces.

Optical second-harmonic generation is demonstrated to be a sensitive probe of the buried interface between the lattice-matched semiconductors gallium phosphide and silicon with (0 0 1) orientation. Ex situ rotational anisotropy measurements on GaP/Si heterostructures show a strong isotropic component of the second-harmonic response not present for pure Si(0 0 1) or GaP(0 0 1). The strength of the overlaying anisotropic response directly correlates with the quality of the interface as determined by atomically resolved scanning transmission electron microscopy. Systematic comparison of samples fabricated under different growth conditions in metal-organic vapor phase epitaxy reveals that the anisotropy for different polarization combinations can be used as a selective fingerprint for the occurrence of anti-phase domains and twins. This all-optical technique can be applied as an in situ and non-invasive monitor even during growth.

Thermally Introduced Bismuth Clustering in Ga(P,Bi) Layers under Group V Stabilised Conditions Investigated by Atomic Resolution In Situ (S)TEM.

We report the formation of Bi clusters in Ga(P1-x,Bix) layers during an in situ (scanning) transmission electron microscopy ((S)TEM) annealing investigation. The non-destructive temperature regime in dependence on the tertiarybutylphosphine (TBP) pressure in the in situ cell was investigated to ensure that the results are not distorted by any destructive behaviour of the crystal during the thermal treatment. The following annealing series of the Ga(P92.6Bi7.4) and Ga(P96.4Bi3.6) layers reveals that the threshold temperature at which the Bi clustering takes place is 600 °C in the Ga(P92.6Bi7.4) layer. Further thermal treatments up to 750 °C show a relationship between the Bi fraction in the Ga(P1-x,Bix) layer and the initial temperature at which the Bi clustering takes place. Finally, we investigate one Bi cluster at atomic resolution conditions. In these conditions, we found that the Bi cluster crystallized in a rhombohedral phase, aligning with its {101} planes parallel to the Ga(P,Bi) {202} planes.

An experimental approach for real time mass spectrometric CVD gas phase investigations.

This is a report on the first setup of a recently developed, extremely sensitive and very fast 3D quadrupole ion trap mass spectrometer inline in a metalorganic vapour phase epitaxy (MOVPE) system. This setup was developed ultimately for the decomposition- and the interaction analysis of various established as well as novel metalorganic sources for MOVPE deposition of III/V semiconductors. To make in-situ gas phase and growth interaction analysis on a new level of sensitivity possible without disturbing the MOVPE growth process itself, an optimized experimental connection of the mass spectrometer to the MOVPE system is required. This work reports on the realization of such an experimental setup and provides first proof of concept for decomposition analysis. In addition, a comparison to previous studies and gas-phase analysis at MOVPE systems will be given in this work.

Atomic structure of 'W'-type quantum well heterostructures investigated by aberration-corrected STEM.

The atomic structure of (GaIn)As/Ga(AsSb)/(GaIn)As-'W'-type quantum well heterostructures ('W'-QWHs) is investigated by scanning transmission electron microscopy (STEM). These structures were grown by metal organic vapour phase epitaxy and are built for type-II laser systems in the infrared wavelength regime. For two samples grown at 525°C and 550°C, intensity profiles are extracted from the STEM images for each sublattice separately. These intensity profiles are compared to the one obtained from an image simulation of an ideal 'W'-QWH that is modelled in close agreement with the experiment. From the intensity profiles, the width of the different quantum wells (QWs) can be determined. Additionally, characteristics connected to the growth of the structures, such as segregation coefficients and material homogeneity, are calculated. Finally, composition profiles are derived from the STEM intensity profiles to a first approximation. For these composition profiles, the expected photoluminescence (PL) is computed based using the semiconductor luminescence equations. The PL spectra are then compared to experimental measurements for both samples.

Towards the liquid phase exfoliation of bismuth iodide.

Liquid phase exfoliation (LPE) of layered compounds towards few- or monolayers has been established as one of the prime methods in the growing field of 2D material research. Here, we present first steps towards an effective LPE of bismuth(iii) iodide, a semiconductor with potential as a photovoltaic absorber material. We highlight guidelines in the choice of exfoliating solvent, which differ significantly from those used with transition metal dichalcogenides or graphene. We also present first evidence of successful few-layer formation from spectroscopic, electron microscopy and electron diffraction investigations.

Local sample thickness determination via scanning transmission electron microscopy defocus series.

The usable aperture sizes in (scanning) transmission electron microscopy ((S)TEM) have significantly increased in the past decade due to the introduction of aberration correction. In parallel with the consequent increase of convergence angle the depth of focus has decreased severely and optical sectioning in the STEM became feasible. Here we apply STEM defocus series to derive the local sample thickness of a TEM sample. To this end experimental as well as simulated defocus series of thin Si foils were acquired. The systematic blurring of high resolution high angle annular dark field images is quantified by evaluating the standard deviation of the image intensity for each image of a defocus series. The derived dependencies exhibit a pronounced maximum at the optimum defocus and drop to a background value for higher or lower values. The full width half maximum (FWHM) of the curve is equal to the sample thickness above a minimum thickness given by the size of the used aperture and the chromatic aberration of the microscope. The thicknesses obtained from experimental defocus series applying the proposed method are in good agreement with the values derived from other established methods. The key advantages of this method compared to others are its high spatial resolution and that it does not involve any time consuming simulations.

Quantitative characterization of the interface roughness of (GaIn)As quantum wells by high resolution STEM.

The physical properties of semiconductor quantum wells (QW), like (GaIn)As/GaAs, are significantly influenced by the interface morphology. In the present work, high angle annular dark field imaging in (scanning) transmission electron microscopy ((S)TEM), in combination with contrast simulation, is used to address this question at atomic resolution. The (GaIn)As QWs were grown with metal organic vapor phase epitaxy on GaAs (001) substrates under different, precisely controlled conditions. In order to be able to compare different samples, a carefully applied method to gain reliable results from high resolution STEM micrographs was used. The thickness gradient of the TEM samples, caused by sample preparation, was compensated by the intensity of group V atomic columns, where no alloying takes place. After that, the In concentration map was plotted for the investigated regions based on the intensity of the group III atomic columns. The composition maps show that the Indium distribution across the quantum well is not homogeneous. The growth temperature of the QW can greatly influence the composition fluctuation and the interface morphology, with higher growth temperature resulting in larger composition fluctuations in the QWs and slightly wider interfaces, i.e. larger In-segregation. Growth interruptions are shown to significantly homogenize the elemental depth profile especially along the (GaIn)As/GaAs interface and hence have a positive effect on interface smoothness.

Characterization of solar cells by photocurrent spectroscopy and current-voltage characteristics with high spatial resolution.

Spatially resolved photocurrent-spectroscopy and spatially resolved current-voltage characteristics are introduced as new methods to characterize solar cells. A combination of these two methods is shown to localize and characterize deficiencies and structural damages in processed solar cells with high spatial resolution. The local external and internal quantum efficiencies as well as the local characteristic parameters of the p-n junction like the short circuit current, the saturation current, the ideality factor, and the optically induced shunt resistance can be determined quantitatively. Both, a slab of a damaged and an undamaged (GaIn)(NAs) concentrator solar cell, are used as test structures. Upon these test structures domains with a high concentration of impurities in the crystal structure and structural imperfections in the upper contact region are identified and analyzed. Additional numerical simulations prove the reliability and show limits of the methods.

Tuning the magnetic properties of GaAs:Mn/MnAs hybrids via the MnAs cluster shape.

We report a systematic study of ferromagnetic resonance in granular GaAs:Mn/MnAs hybrids grown on GaAs(001) substrates by metal-organic vapour-phase epitaxy. The ferromagnetic resonance of the MnAs clusters can be resolved at all temperatures below T(c). An additional broad absorption is observed below 60 K and is ascribed to localized charge carriers of the GaAs:Mn matrix. The anisotropy of the MnAs ferromagnetic resonance field originates from the magneto-crystalline field and demagnetization effects of the ferromagnetic MnAs clusters embedded in the GaAs:Mn matrix. Its temperature dependence basically scales with magnetization. Comparison of the observed angular dependence of the resonance field with model calculations yields the preferential orientation and shape of the clusters formed in hybrid layers of different thickness (150-1000 nm) grown otherwise at the same growth conditions. The hexagonal axes of the MnAs clusters are oriented along the four cubic GaAs space diagonals. Thin layers contain lens-shaped MnAs clusters close to the surface, whereas thick layers also contain spherical clusters in the bulk of the layer. The magnetic properties of the hexagonal MnAs clusters can be tuned by a controlled variation of the cluster shape.

Calcium coordination and pH dependence of the calcium affinity of ligand-binding repeat CR7 from the LRP. Comparison with related domains from the LRP and the LDL receptor.

We have determined the X-ray crystal structure to 1.8 A resolution of the Ca(2+) complex of complement-like repeat 7 (CR7) from the low-density lipoprotein receptor-related protein (LRP) and characterized its calcium binding properties at pH 7.4 and 5. CR7 occurs in a region of the LRP that binds to the receptor-associated protein, RAP, and other protein ligands in a Ca(2+)-dependent manner. The calcium coordination is identical to that found in LB5 and consists of carboxyls from three conserved aspartates and one conserved glutamate, and the backbone carbonyls of a tryptophan and another aspartate. The overall fold of CR7 is similar to those of CR3 and CR8 from the LRP and LB5 from the LDL receptor, though the low degree of sequence homology of residues not involved in calcium coordination or in disulfide formation results in a distinct pattern of surface residues for each domain, including CR7. The thermodynamic parameters for Ca(2+) binding at both extracellular and endosomal pHs were determined by isothermal titration calorimetry for CR7 and for related complement-like repeats CR3, CR8, and LB5. Although the drop in pH resulted in a reduction in calcium affinity in each case, the changes were very variable in magnitude, being as low as a 2-fold reduction for CR3. This suggests that a pH-dependent change in calcium affinity alone cannot be responsible for the release of bound protein ligands from the LRP at the pH prevailing in the endosome, which in turn requires one or more other pH-dependent effects for regulating protein ligand release.

Crystal structure of human PEDF, a potent anti-angiogenic and neurite growth-promoting factor.

Pigment epithelium-derived factor (PEDF), a noninhibitory member of the serpin superfamily, is the most potent inhibitor of angiogenesis in the mammalian ocular compartment. It also has neurotrophic activity, both in the retina and in the central nervous system, and is highly up-regulated in young versus senescent fibroblasts. To provide a structural basis for understanding its many biological roles, we have solved the crystal structure of glycosylated human PEDF to 2.85 A. The structure revealed the organization of possible receptor and heparin-binding sites, and showed that, unlike any other previously characterized serpin, PEDF has a striking asymmetric charge distribution that might be of functional importance. These results provide a starting point for future detailed structure/function analyses into possible mechanisms of PEDF action that could lead to development of therapeutics against uncontrolled angiogenesis.

A distinct meta-active conformation in the 1.1-A resolution structure of wild-type ApoCheY.

CheY is the best characterized member of the response regulator superfamily, and as such it has become the principal model for understanding the initial molecular mechanisms of signaling in two-component systems. Normal signaling by response regulators requires phosphorylation, in combination with an activation mechanism whose conformational effects are not completely understood. CheY activation involves three events, phosphorylation, a conformational change in the beta(4)--alpha(4) loop, and a rotational restriction of the side chain of tyrosine 106. An outstanding question concerns the nature of an active conformation in the apoCheY population. The details of this 1.08-A resolution crystal structure of wild-type apoCheY shows the beta(4)--alpha(4) loop in two distinctly different conformations that sterically correlate with the two rotameric positions of the tyrosine 106 side chain. One of these conformational states of CheY is the inactive form, and we propose that the other is a meta-active form, responsible for the active properties seen in apoCheY.