Cavity-Enhanced Emission from a Silicon T Center.

Silicon T centers present the promising possibility of generating optically active spin qubits in an all-silicon device. However, these color centers exhibit long excited state lifetimes and a low Debye-Waller factor, making them dim emitters with low efficiency into the zero-phonon line. Nanophotonic cavities can solve this problem by enhancing radiative emission into the zero-phonon line through the Purcell effect. In this work, we demonstrate cavity-enhanced emission from a single T center in a nanophotonic cavity. We achieve a 2 order of magnitude increase in the brightness of the zero-phonon line relative to waveguide-coupled emitters, a 23% collection efficiency from emitter to fiber, and an overall emission efficiency into the zero-phonon line of 63.4%. We also observe a lifetime enhancement of 5, corresponding to a Purcell factor exceeding 18 when correcting for the emission to the phonon sideband. These results pave the way toward efficient spin-photon interfaces in silicon photonics.

Telecom-band quantum dot technologies for long-distance quantum networks.

A future quantum internet is expected to generate, distribute, store and process quantum bits (qubits) over the world by linking different quantum nodes via quantum states of light. To facilitate long-haul operations, quantum repeaters must operate at telecom wavelengths to take advantage of both the low-loss optical fibre network and the established technologies of modern optical communications. Semiconductor quantum dots have thus far shown exceptional performance as key elements for quantum repeaters, such as quantum light sources and spin-photon interfaces, but only in the near-infrared regime. Therefore, the development of high-performance telecom-band quantum dot devices is highly desirable for a future solid-state quantum internet based on fibre networks. In this Review, we present the physics and technological developments towards epitaxial quantum dot devices emitting in the telecom O- and C-bands for quantum networks, considering both advanced epitaxial growth for direct telecom emission and quantum frequency conversion for telecom-band down-conversion of near-infrared quantum dot devices. We also discuss the challenges and opportunities for future realization of telecom quantum dot devices with improved performance and expanded functionality through hybrid integration.

Hybrid Si-GaAs photonic crystal cavity for lasing and bistability.

The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to integrate such heterogeneous Si/III-V devices, but it remains unclear how to utilize these modes to achieve photonic crystal cavities. Herein, using 3D finite-difference time-domain simulations, we propose a hybrid Si-GaAs photonic crystal cavity design that operates at telecom wavelengths and can be fabricated without requiring careful alignment. The hybrid cavity consists of a patterned silicon waveguide that is coupled to a wider GaAs slab featuring InAs quantum dots. We show that by changing the width of the silicon cavity waveguide, we can engineer the hybrid modes and control the degree of coupling to the active material in the GaAs slab. This provides the ability to tune the cavity quality factor while balancing the device's optical gain and nonlinearity. With this design, we demonstrate cavity mode confinement in the GaAs slab without directly patterning it, enabling strong interaction with the embedded quantum dots for applications such as low-power-threshold lasing and optical bistability (156 nW and 18.1 µW, respectively). This heterogeneous integration of an active III-V material with silicon via a hybrid cavity design suggests a promising approach for achieving on-chip light generation and low-power nonlinear platforms.

All-Optical Noise Spectroscopy of a Solid-State Spin.

Noise spectroscopy elucidates the fundamental noise sources in spin systems, thereby serving as an essential tool toward developing spin qubits with long coherence times for quantum information processing, communication, and sensing. But existing techniques for noise spectroscopy that rely on microwave fields become infeasible when the microwave power is too weak to generate Rabi rotations of the spin. Here, we demonstrate an alternative all-optical approach to performing noise spectroscopy. Our approach utilizes coherent Raman rotations of the spin state with controlled timing and phase to implement Carr-Purcell-Meiboom-Gill pulse sequences. Analyzing the spin dynamics under these sequences enables us to extract the noise spectrum of a dense ensemble of nuclear spins interacting with a single spin in a quantum dot, which has thus far been modeled only theoretically. By providing spectral bandwidths of over 100 MHz, our approach enables studies of spin dynamics and decoherence for a broad range of solid-state spin qubits.

Correlations between Cascaded Photons from Spatially Localized Biexcitons in ZnSe.

Radiative cascades emit correlated photon pairs, providing a pathway for the generation of entangled photons. The realization of a radiative cascade with impurity atoms in semiconductors, a leading platform for the generation of quantum light, would therefore provide a new avenue for the development of entangled photon pair sources. Here we demonstrate a radiative cascade from the decay of a biexciton at an impurity-atom complex in a ZnSe quantum well. The emitted photons show clear temporal correlations revealing the time-ordering of the cascade. Our result establishes impurity atoms in ZnSe as a potential platform for photonic quantum technologies using radiative cascades.

Optical Transparency Induced by a Largely Purcell Enhanced Quantum Dot in a Polarization-Degenerate Cavity.

Optically active spin systems coupled to photonic cavities with high cooperativity can generate strong light-matter interactions, a key ingredient in quantum networks. However, obtaining high cooperativities for quantum information processing often involves the use of photonic crystal cavities that feature a poor optical access from the free space, especially to circularly polarized light required for the coherent control of the spin. Here, we demonstrate coupling with a cooperativity as high as 8 of an InAs/GaAs quantum dot to a fabricated bullseye cavity that provides nearly degenerate and Gaussian polarization modes for efficient optical accessing. We observe spontaneous emission lifetimes of the quantum dot as short as 80 ps (an ∼15 Purcell enhancement) and a ∼80% transparency of light reflected from the cavity. Leveraging the induced transparency for photon switching while coherently controlling the quantum dot spin could contribute to ongoing efforts of establishing quantum networks.

Low power threshold, ultrathin optical limiter based on a nonlinear zone plate.

Ultrathin optical limiters are needed to protect light sensitive components in miniaturized optical systems. However, it has proven challenging to achieve a sufficiently low optical limiting threshold. In this work, we theoretically show that an ultrathin optical limiter with low threshold intensity can be realized using a nonlinear zone plate. The zone plate is embedded with nonlinear saturable absorbing materials that allow the device to focus low intensity light, while high intensity light is transmitted as a plane wave without a focal spot. Based on this proposed mechanism, we use the finite-difference time-domain method to computationally design a zone plate embedded with InAs quantum dots as the saturable absorbing material. The device has a thickness of just 0.5 µm and exhibits good optical limiting behavior with a threshold intensity as low as 0.45 kW/cm2, which is several orders of magnitude lower than bulk limiter counterparts based on a similar mechanism, and also performs favorably compared to current ultrathin flat-optics-based optical limiters. This design can be optimized for different operating wavelengths and threshold intensities by using different saturable absorbing materials. Additionally, the diameter and focal length of the nonlinear zone plate can be easily adjusted to fit different systems and applications. Due to its flexible design, low power threshold, and ultrathin thickness, this optical limiting concept may be promising for application in miniaturized optical systems.

Bright Telecom-Wavelength Single Photons Based on a Tapered Nanobeam.

Telecom-wavelength single photons are essential components for long-distance quantum networks. However, bright and pure single photon sources at telecom wavelengths remain challenging to achieve. Here, we demonstrate a bright telecom-wavelength single photon source based on a tapered nanobeam containing InAs/InP quantum dots. The tapered nanobeam enables directional and Gaussian-like far-field emission of the quantum dots. As a result, using above-band excitation we obtain an end-to-end brightness of 4.1 ± 0.1% and first-lens brightness of 27.0 ± 0.1% at the ∼1300 nm wavelength. Furthermore, we adopt quasi-resonant excitation to reduce both multiphoton emission and decoherence from unwanted charge carriers. As a result, we achieve a coherence time of 523 ± 16 ps and postselected Hong-Ou-Mandel visibility of 0.91 ± 0.09 along with a comparable first-lens brightness of 21.0 ± 0.1%. These results represent a major step toward a practical fiber-based single photon source at telecom wavelengths for long-distance quantum networks.

Mathematical modeling and experimental validation for expression microdissection.

Using laser excitation, expression microdissection (xMD) can selectively heat cancer cells targeted via immunohistochemical staining to enable their selective retrieval from tumor tissue samples, thus reducing misdiagnoses caused by contamination of noncancerous cells. Several theoretical models have been validated for the photothermal effect in highly light absorbing and scattering media. However, these models are not generally applicable to the physics behind the process of xMD. In this study, we propose a thermal model that can analyze the transient temperature distribution and heat melt zone in an xMD sample medium composed of a thermoplastic film and a tumor tissue sample sandwiched between two glass slides. Furthermore, we experimentally examined the model using an ink layer with controllable optical properties to serve as a microscale-thin, tissue-mimicking phantom and found the experimentally measured film temperature is in good agreement with the model predictions. The validated model can help researchers to optimize cell retrieval by xMD for improved diagnostics of cancer and other diseases.

Integrated Photonic Platform for Rare-Earth Ions in Thin Film Lithium Niobate.

Rare-earth ion ensembles doped in single crystals are a promising materials system with widespread applications in optical signal processing, lasing, and quantum information processing. Incorporating rare-earth ions into integrated photonic devices could enable compact lasers and modulators, as well as on-chip optical quantum memories for classical and quantum optical applications. To this end, a thin film single crystalline wafer structure that is compatible with planar fabrication of integrated photonic devices would be highly desirable. However, incorporating rare-earth ions into a thin film form-factor while preserving their optical properties has proven challenging. We demonstrate an integrated photonic platform for rare-earth ions doped in a single crystalline thin film lithium niobate on insulator. The thin film is composed of lithium niobate doped with Tm3+. The ions in the thin film exhibit optical lifetimes identical to those measured in bulk crystals. We show narrow spectral holes in a thin film waveguide that require up to 2 orders of magnitude lower power to generate than previously reported bulk waveguides. Our results pave the way for scalable on-chip lasers, optical signal processing devices, and integrated optical quantum memories.

Synthetic Gauge Field for Two-Dimensional Time-Multiplexed Quantum Random Walks.

Temporal multiplexing provides an efficient and scalable approach to realize a quantum random walk with photons that can exhibit topological properties. But two-dimensional time-multiplexed topological quantum walks studied so far have relied on generalizations of the Su-Shreiffer-Heeger model with no synthetic gauge field. In this work, we demonstrate a two-dimensional topological quantum random walk where the nontrivial topology is due to the presence of a synthetic gauge field. We show that the synthetic gauge field leads to the appearance of multiple band gaps and, consequently, a spatial confinement of the quantum walk distribution. Moreover, we demonstrate topological edge states at an interface between domains with opposite synthetic fields. Our results expand the range of Hamiltonians that can be simulated using photonic quantum walks.

Chiral light-matter interactions using spin-valley states in transition metal dichalcogenides.

Chiral light-matter interactions can enable polarization to control the direction of light emission in a photonic device. Most realizations of chiral light-matter interactions require external magnetic fields to break time-reversal symmetry of the emitter. One way to eliminate this requirement is to utilize strong spin-orbit coupling present in transition metal dichalcogenides that exhibit a valley-dependent polarized emission. Such interactions were previously reported using plasmonic waveguides, but these structures exhibit short propagation lengths due to loss. Chiral dielectric structures exhibit much lower loss levels and could therefore solve this problem. We demonstrate chiral light-matter interactions using spin-valley states of transition metal dichalcogenide monolayers coupled to a dielectric waveguide. We use a photonic crystal glide-plane waveguide that exhibits chiral modes with high field intensity, coupled to monolayer WSe2. We show that the circularly polarized emission of the monolayer preferentially couples to one direction of the waveguide, with a directionality as high as 0.35, limited by the polarization purity of the bare monolayer emission. This system enables on-chip directional control of light and could provide new ways to control spin and valley degrees of freedom in a scalable photonic platform.

A Spin-Photon Interface Using Charge-Tunable Quantum Dots Strongly Coupled to a Cavity.

Charged quantum dots containing an electron or hole spin are bright solid-state qubits suitable for quantum networks and distributed quantum computing. Incorporating such quantum dot spin into a photonic crystal cavity creates a strong spin-photon interface in which the spin can control a photon by modulating the cavity reflection coefficient. However, previous demonstrations of such spin-photon interfaces have relied on quantum dots that are charged randomly by nearby impurities, leading to instability in the charge state, which causes poor contrast in the cavity reflectivity. Here we demonstrate a strong spin-photon interface using a quantum dot that is charged deterministically with a diode structure. By incorporating this actively charged quantum dot in a photonic crystal cavity, we achieve strong coupling between the cavity mode and the negatively charged state of the dot. Furthermore, by initializing the spin through optical pumping, we show strong spin-dependent modulation of the cavity reflectivity, corresponding to a cooperativity of 12. This spin-dependent reflectivity is important for mediating entanglement between spins using photons, as well as generating strong photon-photon interactions for applications in quantum networking and distributed quantum computing.

Silicon photonic add-drop filter for quantum emitters.

Integration of single-photon sources and detectors to silicon-based photonics opens the possibility of complex circuits for quantum information processing. In this work, we demonstrate integration of quantum dots with a silicon photonic add-drop filter for on-chip filtering and routing of telecom photons. A silicon microdisk resonator acts as a narrow filter that transfers the quantum dot emission and filters the background over a wide wavelength range. Moreover, by tuning the quantum dot emission wavelength over the resonance of the microdisk, we can control the transmission of the quantum dot emission to the drop and through channels of the add-drop filter. This result is a step toward the on-chip control of single photons using silicon photonics for applications in quantum information processing, such as linear optical quantum computation and boson sampling.

A single-photon switch and transistor enabled by a solid-state quantum memory.

Single-photon switches and transistors generate strong photon-photon interactions that are essential for quantum circuits and networks. However, the deterministic control of an optical signal with a single photon requires strong interactions with a quantum memory, which has been challenging to achieve in a solid-state platform. We demonstrate a single-photon switch and transistor enabled by a solid-state quantum memory. Our device consists of a semiconductor spin qubit strongly coupled to a nanophotonic cavity. The spin qubit enables a single 63-picosecond gate photon to switch a signal field containing up to an average of 27.7 photons before the internal state of the device resets. Our results show that semiconductor nanophotonic devices can produce strong and controlled photon-photon interactions that could enable high-bandwidth photonic quantum information processing.

Super-Radiant Emission from Quantum Dots in a Nanophotonic Waveguide.

Future scalable photonic quantum information processing relies on the ability of integrating multiple interacting quantum emitters into a single chip. Quantum dots provide ideal on-chip quantum light sources. However, achieving quantum interaction between multiple quantum dots on-a-chip is a challenging task due to the randomness in their frequency and position, requiring local tuning technique and long-range quantum interaction. Here, we demonstrate quantum interactions between separated two quantum dots on a nanophotonic waveguide. We achieve a photon-mediated long-range interaction by integrating the quantum dots to the same optical mode of a nanophotonic waveguide and overcome spectral mismatch by incorporating on-chip thermal tuners. We observe their quantum interactions of the form of super-radiant emission, where the two dots collectively emit faster than each dot individually. Creating super-radiant emission from integrated quantum emitters could enable compact chip-integrated photonic structures that exhibit long-range quantum interactions. Therefore, these results represent a major step toward establishing photonic quantum information processors composed of multiple interacting quantum emitters on a semiconductor chip.

Humidity-Induced Photoluminescence Hysteresis in Variable Cs/Br Ratio Hybrid Perovskites.

Hybrid organic-inorganic perovskites containing Cs are a promising new material for light-absorbing and light-emitting optoelectronics. However, the impact of environmental conditions on their optical properties is not fully understood. Here, we elucidate and quantify the influence of distinct humidity levels on the charge carrier recombination in Cs xFA1- xPb(I yBr1- y)3 perovskites. Using in situ environmental photoluminescence (PL), we temporally and spectrally resolve light emission within a loop of critical relative humidity (rH) levels. Our measurements show that exposure up to 35% rH increases the PL emission for all Cs (10-17%) and Br (17-38%) concentrations investigated here. Spectrally, samples with larger Br concentrations exhibit PL redshift at higher humidity levels, revealing water-driven halide segregation. The compositions considered present hysteresis in their PL intensity upon returning to a low-moisture environment due to partially reversible hydration of the perovskites. Our findings demonstrate that the Cs/Br ratio strongly influences both the spectral stability and extent of light emission hysteresis. We expect our method to become standard when testing the stability of emerging perovskites, including lead-free options, and to be combined with other parameters known for affecting material degradation, e.g., oxygen and temperature.

A topological quantum optics interface.

The application of topology in optics has led to a new paradigm in developing photonic devices with robust properties against disorder. Although considerable progress on topological phenomena has been achieved in the classical domain, the realization of strong light-matter coupling in the quantum domain remains unexplored. We demonstrate a strong interface between single quantum emitters and topological photonic states. Our approach creates robust counterpropagating edge states at the boundary of two distinct topological photonic crystals. We demonstrate the chiral emission of a quantum emitter into these modes and establish their robustness against sharp bends. This approach may enable the development of quantum optics devices with built-in protection, with potential applications in quantum simulation and sensing.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.