1.
Nano Lett
; 10(10): 3972-7, 2010 Oct 13.
Artigo
em Inglês
| MEDLINE
| ID: mdl-20863138
RESUMO
Combined cross-sectional scanning tunneling microscopy and spectroscopy results reveal the interplay between the atomic structure of ring-shaped GaSb quantum dots in GaAs and the corresponding electronic properties. Hole confinement energies between 0.2 and 0.3 eV and a type-II conduction band offset of 0.1 eV are directly obtained from the data. Additionally, the hole occupancy of quantum dot states and spatially separated Coulomb-bound electron states are observed in the tunneling spectra.