Evidence for chiral graviton modes in fractional quantum Hall liquids.

Exotic physics could emerge from interplay between geometry and correlation. In fractional quantum Hall (FQH) states1, novel collective excitations called chiral graviton modes (CGMs) are proposed as quanta of fluctuations of an internal quantum metric under a quantum geometry description2-5. Such modes are condensed-matter analogues of gravitons that are hypothetical spin-2 bosons. They are characterized by polarized states with chirality6-8 of +2 or -2, and energy gaps coinciding with the fundamental neutral collective excitations (namely, magnetorotons9,10) in the long-wavelength limit. However, CGMs remain experimentally inaccessible. Here we observe chiral spin-2 long-wavelength magnetorotons using inelastic scattering of circularly polarized lights, providing strong evidence for CGMs in FQH liquids. At filling factor v = 1/3, a gapped mode identified as the long-wavelength magnetoroton emerges under a specific polarization scheme corresponding to angular momentum S = -2, which persists at extremely long wavelength. Remarkably, the mode chirality remains -2 at v = 2/5 but becomes the opposite at v = 2/3 and 3/5. The modes have characteristic energies and sharp peaks with marked temperature and filling-factor dependence, corroborating the assignment of long-wavelength magnetorotons. The observations capture the essentials of CGMs and support the FQH geometrical description, paving the way to unveil rich physics of quantum metric effects in topological correlated systems.

Domain Textures in the Fractional Quantum Hall Effect.

Impacts of domain textures on low-lying neutral excitations in the bulk of fractional quantum Hall effect (FQHE) systems are probed by resonant inelastic light scattering. We demonstrate that large domains of quantum fluids support long-wavelength neutral collective excitations with well-defined wave vector (momentum) dispersion that could be interpreted by theories for uniform phases. Access to dispersive low-lying neutral collective modes in large domains of FQHE fluids such as long wavelength magnetorotons at filling factor v=1/3 offer significant experimental access to strong electron correlation physics in the FQHE.

Observation of Flat Bands in Gated Semiconductor Artificial Graphene.

Flat bands near M points in the Brillouin zone are key features of honeycomb symmetry in artificial graphene (AG) where electrons may condense into novel correlated phases. Here we report the observation of van Hove singularity doublet of AG in GaAs quantum well transistors, which presents the evidence of flat bands in semiconductor AG. Two emerging peaks in photoluminescence spectra tuned by backgate voltages probe the singularity doublet of AG flat bands and demonstrate their accessibility to the Fermi level. As the Fermi level crosses the doublet, the spectra display dramatic stability against electron density, indicating interplays between electron-electron interactions and honeycomb symmetry. Our results provide a new flexible platform to explore intriguing flat band physics.

Light-Driven Electron-Hole Bardeen-Cooper-Schrieffer-Like State in Bulk GaAs.

We investigate the photon-dressed state of excitons in bulk GaAs by optical pump-probe spectroscopy. We reveal that the high-energy branch of the dressed states continuously evolves into a singular enhancement at the absorption edge in the high-density region where the exciton picture is no longer valid. Comparing the experimental result with a simulation based on semiconductor Bloch equations, we show that the dressed state in such a high-density region is better viewed as a Bardeen-Cooper-Schrieffer-like state, which has been theoretically anticipated to exist over decades. Having seen that the dressed state can be regarded as a macroscopic coherent state driven by an external light field, we also discuss the decoherence from the dressed state to an incoherent state after the photoexcitation in view of the Coulomb enhancement in the transient absorption.

Observation of new plasmons in the fractional quantum Hall effect: Interplay of topological and nematic orders.

Collective modes of exotic quantum fluids reveal underlying physical mechanisms responsible for emergent quantum states. We observe unexpected new collective modes in the fractional quantum Hall (FQH) regime: intra-Landau-level plasmons measured by resonant inelastic light scattering. The plasmons herald rotational-symmetry-breaking (nematic) phases in the second Landau level and uncover the nature of long-range translational invariance in these phases. The intricate dependence of plasmon features on filling factor provides insights on interplays between topological quantum Hall order and nematic electronic liquid crystal phases. A marked intensity minimum in the plasmon spectrum at Landau level filling factor v = 5/2 strongly suggests that this paired state, which may support non-Abelian excitations, overwhelms competing nematic phases, unveiling the robustness of the 5/2 superfluid state for small tilt angles. At v = 7/3, a sharp and strong plasmon peak that links to emerging macroscopic coherence supports the proposed model of a FQH nematic state.

Negative longitudinal magnetoresistance in gallium arsenide quantum wells.

Negative longitudinal magnetoresistances (NLMRs) have been recently observed in a variety of topological materials and often considered to be associated with Weyl fermions that have a defined chirality. Here we report NLMRs in non-Weyl GaAs quantum wells. In the absence of a magnetic field the quantum wells show a transition from semiconducting-like to metallic behaviour with decreasing temperature. We observe pronounced NLMRs up to 9 Tesla at temperatures above the transition and weak NLMRs in low magnetic fields at temperatures close to the transition and below 5 K. The observed NLMRs show various types of magnetic field behaviour resembling those reported in topological materials. We attribute them to microscopic disorder and use a phenomenological three-resistor model to account for their various features. Our results showcase a contribution of microscopic disorder in the occurrence of unusual phenomena. They may stimulate further work on tuning electronic properties via disorder/defect nano-engineering.

Emerging many-body effects in semiconductor artificial graphene with low disorder.

The interplay between electron-electron interactions and the honeycomb topology is expected to produce exotic quantum phenomena and find applications in advanced devices. Semiconductor-based artificial graphene (AG) is an ideal system for these studies that combines high-mobility electron gases with AG topology. However, to date, low-disorder conditions that reveal the interplay of electron-electron interaction with AG symmetry have not been achieved. Here, we report the creation of low-disorder AG that preserves the near-perfection of the pristine electron layer by fabricating small period triangular antidot lattices on high-quality quantum wells. Resonant inelastic light scattering spectra show collective spin-exciton modes at the M-point's nearly flatband saddle-point singularity in the density of states. The observed Coulomb exchange interaction energies are comparable to the gap of Dirac bands at the M-point, demonstrating interplay between quasiparticle interactions and the AG potential. The saddle-point exciton energies are in the terahertz range, making low-disorder AG suitable for contemporary optoelectronic applications.

Observation of Dirac bands in artificial graphene in small-period nanopatterned GaAs quantum wells.

Charge carriers in graphene behave like massless Dirac fermions (MDFs) with linear energy-momentum dispersion 1, 2 , providing a condensed-matter platform for studying quasiparticles with relativistic-like features. Artificial graphene (AG)-a structure with an artificial honeycomb lattice-exhibits novel phenomena due to the tunable interplay between topology and quasiparticle interactions 3-6 . So far, the emergence of a Dirac band structure supporting MDFs has been observed in AG using molecular 5 , atomic 6, 7 and photonic systems 8-10 , including those with semiconductor microcavities 11 . Here, we report the realization of an AG that has a band structure with vanishing density of states consistent with the presence of MDFs. This observation is enabled by a very small lattice constant (a = 50 nm) of the nanofabricated AG patterns superimposed on a two-dimensional electron gas hosted by a high-quality GaAs quantum well. Resonant inelastic light-scattering spectra reveal low-lying transitions that are not present in the unpatterned GaAs quantum well. These excitations reveal the energy dependence of the joint density of states for AG band transitions. Fermi level tuning through the Dirac point results in a collapse of the density of states at low transition energy, suggesting the emergence of the MDF linear dispersion in the AG.

Anomalous Metal Phase Emergent on the Verge of an Exciton Mott Transition.

We investigate the exciton Mott transition (EMT) by using optical pump-terahertz probe spectroscopy on GaAs, with realizing the condition of Mott's gedanken experiment by the resonant excitation of 1s excitons. We show that an anomalous metallic phase emerges on the verge of the EMT as manifested by a peculiar enhancement of the quasiparticle mass and scattering rate. From the temperature and density dependence, the observed anomaly is shown to originate from the electron-hole (e-h) correlation which becomes prominent at low temperatures, possibly suggesting a precursor of e-h Cooper pairing.

Mechanical Flip-Chip for Ultra-High Electron Mobility Devices.

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the fabrication of a wide range of devices such as, for example, quantum point contacts (QPC), electron interferometers and quantum dots. To fabricate these gates, processing is usually performed on the 2DEG material, which is in many cases detrimental to its electron mobility. Here we propose an alternative process which does not require any processing of the 2DEG material other than for the ohmic contacts. This approach relies on processing a separate wafer that is then mechanically mounted on the 2DEG material in a flip-chip fashion. This technique proved successful to fabricate quantum point contacts on both GaAs/AlGaAs materials with both moderate and ultra-high electron mobility.

A Noninvasive Method for Nanoscale Electrostatic Gating of Pristine Materials.

Electrostatic gating is essential for defining and control of semiconducting devices. However, nanofabrication processes required for depositing gates inevitably degrade the pristine quality of the material of interest. Examples of materials that suffer from such degradation include ultrahigh mobility GaAs/AlGaAs two-dimensional electron gases (2DEGs), graphene, topological insulators, and nanowires. To preserve the pristine material properties, we have developed a flip-chip setup where gates are separated from the material by a vacuum, which allows nanoscale electrostatic gating of the material without exposing it to invasive nanoprocessing. An additional benefit is the vacuum between gates and material, which, unlike gate dielectrics, is free from charge traps. We demonstrate the operation and feasibility of the flip-chip setup by achieving quantum interference at integer quantum Hall states in a Fabry-Pérot interferometer based on a GaAs/AlGaAs 2DEG. Our results pave the way for the study of exotic phenomena including fragile fractional quantum Hall states by preserving the high quality of the material.

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures.

Search for Majorana fermions renewed interest in semiconductor-superconductor interfaces, while a quest for higher-order non-Abelian excitations demands formation of superconducting contacts to materials with fractionalized excitations, such as a two-dimensional electron gas in a fractional quantum Hall regime. Here we report induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures and development of highly transparent semiconductor-superconductor ohmic contacts. Supercurrent with characteristic temperature dependence of a ballistic junction has been observed across 0.6 µm, a regime previously achieved only in point contacts but essential to the formation of well separated non-Abelian states. High critical fields (>16 T) in NbN contacts enables investigation of an interplay between superconductivity and strongly correlated states in a two-dimensional electron gas at high magnetic fields.

Mode imaging and loss evaluation of semiconductor waveguides.

An imaging and loss evaluation method for semiconductor waveguides coupled with non-doped quantum wells is presented. Using the internal emission of the wells as a probe light source, the numbers and widths of the modes of waveguides with various ridge sizes were evaluated by CCD imaging, and the obtained values were consistent with effective index method calculation. Waveguide internal losses were obtained from analyses of the Fabry-Pérot fringes of waveguide emission spectra. We quantified the quality of 29 single-mode waveguide samples as an internal loss and variation of 10.2 ± 0.6 cm(-1).

Intrinsic radiative lifetime derived via absorption cross section of one-dimensional excitons.

Intrinsic radiative lifetime is an essential physical property of low-dimensional excitons that represents their optical transition rate and wavefunction, which directly measures the probability of finding an electron and a hole at the same position in an exciton. However, the conventional method that is used to determine this property via measuring the temperature-dependent photoluminescence (PL) decay time involves uncertainty due to various extrinsic contributions at high temperatures. Here, we propose an alternative method to derive the intrinsic radiative lifetime via temperature-independent measurement of the absorption cross section and transformation using Einstein's A-B-coefficient equations derived for low-dimensional excitons. We experimentally verified our approach for one-dimensional (1D) excitons in high-quality 14 × 6 nm(2) quantum wires by comparing it to the conventional approach. Both independent evaluations showed good agreement with each other and with theoretical predictions. This approach opens a promising path to studying low-dimensional exciton physics.

Correlated electrons in optically tunable quantum dots: building an electron dimer molecule.

We observe the low-lying excitations of a molecular dimer formed by two electrons in a GaAs semiconductor quantum dot in which the number of confined electrons is tuned by optical illumination. By employing inelastic light scattering we identify the intershell excitations in the one-electron regime and the distinct spin and charge modes in the interacting few-body configuration. In the case of two electrons, a comparison with configuration-interaction calculations allows us to link the observed excitations with the breathing mode of the molecular dimer and to determine the singlet-triplet energy splitting.

First-order quantum phase transition of excitons in quantum Hall bilayers.

We show that the quantum phase transformation between compressible metallic and incompressible excitonic states in the coupled bilayers at total Landau level filling factor nuT=1 becomes discontinuous (first order) by impacts of different terms of the electron-electron interactions that prevail on weak residual disorder. The evidence is based on precise determinations of the excitonic order parameter by inelastic light scattering measurements close to the phase boundary. While there is marked softening of low-lying excitations, our experiments underpin the roles of competing order parameters linked to quasiparticle correlations in removing the divergence of quantum fluctuations.

Spin texture and magnetoroton excitations at nu=1/3.

Neutral spin texture (ST) excitations at nu=1/3 are directly observed for the first time by resonant inelastic light scattering. They are determined to involve two simultaneous spin flips. At low magnetic fields, the ST energy is below that of the magnetoroton minimum. With increasing in-plane magnetic field these mode energies cross at a critical ratio of the Zeeman and Coulomb energies of eta(c)=0.020+/-0.001. Surprisingly, the intensity of the ST mode grows with temperature in the range in which the magnetoroton modes collapse. The temperature dependence is interpreted in terms of a competition between coexisting phases supporting different excitations. We consider the role of the ST excitations in activated transport at nu=1/3.

Soft spin wave near nu=1: evidence for a magnetic instability in Skyrmion systems.

The ground state of the two-dimensional electron gas near nu=1 is investigated by inelastic light scattering measurements carried down to very low temperatures. Away from nu=1, the ferromagnetic spin wave collapses and a new low-energy spin wave emerges below the Zeeman gap. The emergent spin wave shows soft behavior as its energy increases with temperature and reaches the Zeeman energy for temperatures above 2 K. The observed softening indicates an instability of the two-dimensional electron gas towards a magnetic order that breaks spin rotational symmetry. We discuss our findings in light of the possible existence of a Skyrme crystal.

Optical control of energy-level structure of few electrons in AlGaAs/GaAs quantum dots.

Optical control of the lateral quantum confinement and number of electrons confined in nanofabricated GaAs/AlGaAs quantum dots is achieved by illumination with a weak laser beam that is absorbed in the AlGaAs barrier. Precise tuning of energy-level structure and electron population is demonstrated by monitoring the low-lying transitions of the electrons from the lowest quantum-dot energy shells by resonant inelastic light scattering. These findings open the way to the manipulation of single electrons in these quantum dots without the need of external metallic gates.