Lifshitz analysis of dispersion forces based on quantitative reflection electron energy loss spectroscopy.

HYPOTHESIS: The energy loss experienced by an electron while moving through a solid is determined by the optical properties of the surrounding. Hence, quantitative Reflection Electron Energy Loss Spectroscopy (REELS) should allow the determination of optical data required for the calculation of Hamaker coefficients using Lifshitz theory. This approach might improve the accuracy of calculated Hamaker coefficients and should also enable to harness the unique capabilities of REELS to analyse nanostructured surfaces and thin-films with great spatial resolution and surface sensitivity. EXPERIMENTS: REELS spectra of a survey of insulating polymers and of metal-like Ti0.23Al0.32N0.44 (TiAlN) were measured, the complex dielectric functions determined and the corresponding Hamaker coefficients across vacuum and water calculated. The sensitivity of the quantification procedure towards typical systematic errors was investigated. For polystyrene the results were comparatively analysed using vacuum ultraviolet spectroscopy (VUV). FINDINGS: The accuracy especially of the non-retarded vacuum Hamaker constants of the polymers was increased when compared to VUV reflectance spectroscopy due to the higher spectral range of REELS. Furthermore, a new correction procedure for the intricate case of unresolved inelastic losses in the REELS spectrum, such as encountered in the case of TiAlN, could be developed using spectroscopic ellipsometry as a complementary mean.

Analysis of dispersive interactions at polymer/TiAlN interfaces by means of dynamic force spectroscopy.

The structural and electronic origins of the interactions between polycarbonate and sputter deposited TiAlN were analysed using a combined electron and force spectroscopic approach. Interaction forces were measured by means of dynamic force spectroscopy and the surface polarizability was analysed by X-ray photoelectron valence band spectroscopy. It could be shown that the adhesive interactions between polycarbonate and TiAlN are governed by van der Waals forces. Different surface cleansing and oxidizing treatments were investigated and the effect of the surface chemistry on the force interactions was analysed. Intense surface oxidation resulted in a decreased adhesion force by a factor of two due to the formation of a 2 nm thick Ti0.21Al0.45O surface oxide layer. The origin of the residual adhesion forces caused by the mixed Ti0.21Al0.45O surface oxide was clarified by considering the non-retarded Hamaker coefficients as calculated by Lifshitz theory, based on optical data from Reflection Electron Energy Loss Spectroscopy. This disclosed increased dispersion forces of Ti0.21Al0.45O due to the presence of Ti(iv) ions and related Ti 3d band optical transitions.

New amidinate complexes of indium(iii): promising CVD precursors for transparent and conductive In2O3 thin films.

For the first time, synthesis of two new amidinate-ligand comprising heteroleptic indium complexes, namely [InCl(amd)2] (1) and [InMe(amd)2] (2), via salt-metathesis and their detailed characterization is reported. For comparison, the earlier reported homoleptic tris-amidinate [In(amd)3] (3) was also synthesized and analyzed in detail especially with respect to the thermal properties and molecular crystal structure analysis which are reported here for the first time. From nuclear magnetic resonance spectroscopy (NMR) and single-crystal X-ray diffraction (XRD), all three compounds were found to be monomeric with C2 (compound 1 and 2) and C3 symmetry (compound 3). Both halide-free compounds 2 and 3 were evaluated regarding their thermal properties using temperature-dependent 1H-NMR, thermogravimetric analysis (TGA) and iso-TGA, revealing suitable volatility and thermal stability for their application as potential precursors for chemical vapor phase thin film deposition methods. Indeed, metalorganic chemical vapor deposition (MOCVD) experiments over a broad temperature range (400 °C-700 °C) revealed the suitability of these two compounds to fabricate In2O3 thin films in the presence of oxygen on Si, thermally grown SiO2 and fused silica substrates. The as-deposited thin films were characterized in terms of their crystallinity via X-ray diffraction (XRD), morphology by scanning electron microscopy (SEM) and composition through complementary techniques such as Rutherford-backscattering spectrometry (RBS) in combination with nuclear reaction analysis (NRA) and X-ray photoelectron spectroscopy (XPS). From UV/Vis spectroscopy, the deposited In2O3 thin films on fused silica substrates were found to be highly transparent (T > 95% at 560 nm, compound 3). In addition, Hall measurements revealed high charge carrier densities of 1.8 × 1020 cm-3 (2) and 6.5 × 1019 cm-3 (3) with a Hall-mobility of 48 cm2 V-1 s-1 (2) and 74 cm2 V-1 s-1 (3) for the respective thin films, rendering the obtained thin films applicable as a transparent conducting oxide that could be suitable for optoelectronic applications.