Correction: Investigation of factors affecting the stability of compounds formed by isovalent substitution in layered oxychalcogenides, leading to identification of Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2Se2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2.

[This corrects the article DOI: 10.1039/D1TC05051F.].

Computational Prediction and Experimental Realization of Earth-Abundant Transparent Conducting Oxide Ga-Doped ZnSb2O6.

Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is limited to a handful of systems that have been known for the past 40 years. In this work, we use hybrid density functional theory and defect chemistry analysis to demonstrate that tri-rutile zinc antimonate, ZnSb2O6, is an ideal transparent conducting oxide and to identify gallium as the optimal dopant to yield high conductivity and transparency. To validate our computational predictions, we have synthesized both powder samples and single crystals of Ga-doped ZnSb2O6 which conclusively show behavior consistent with a degenerate transparent conducting oxide. This study demonstrates the possibility of a family of Sb(V)-containing oxides for transparent conducting oxide and power electronics applications.

Investigation of factors affecting the stability of compounds formed by isovalent substitution in layered oxychalcogenides, leading to identification of Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2S2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2.

Four novel compositions containing chalcogenide layers, adopting the Ba3M2O5M'2Ch2 layered structure have been identified: Ba3Sc2O5Cu2Se2, Ba3Y2O5Cu2S2, Ba3Sc2O5Ag2Se2 and Ba3In2O5Ag2Se2. A comprehensive comparison of experimental and computational results providing the crystallographic and electronic structure of the compounds under investigation has been conducted. Materials were synthesised at 800 °C under vacuum using a conventional ceramic synthesis route with combination of binary oxide and chalcogenide precursors. We report their structures determined by Rietveld refinement of X-ray powder diffraction patterns, and band gaps determined from optical measurements, which range from 1.44 eV to 3.04 eV. Through computational modelling we can also present detailed band structures and propose that, based on their predicted transport properties, Ba3Sc2O5Ag2Se2 has potential as a visible light photocatalyst and Ba3Sc2O5Cu2Se2 is of interest as a p-type transparent conductor. These four novel compounds are part of a larger series of sixteen compounds adopting the Ba3M2O5M'2Ch2 structure that we have considered, of which approximately half are stable and can be synthesized. Analysis of the compounds that cannot be synthesized from this group allows us to identify why compounds containing either M = La, or silver sulfide chalcogenide layers, cannot be formed in this structure type.

Resonant Ta Doping for Enhanced Mobility in Transparent Conducting SnO2.

Transparent conducting oxides (TCOs) are ubiquitous in modern consumer electronics. SnO2 is an earth abundant, cheaper alternative to In2O3 as a TCO. However, its performance in terms of mobilities and conductivities lags behind that of In2O3. On the basis of the recent discovery of mobility and conductivity enhancements in In2O3 from resonant dopants, we use a combination of state-of-the-art hybrid density functional theory calculations, high resolution photoelectron spectroscopy, and semiconductor statistics modeling to understand what is the optimal dopant to maximize performance of SnO2-based TCOs. We demonstrate that Ta is the optimal dopant for high performance SnO2, as it is a resonant dopant which is readily incorporated into SnO2 with the Ta 5d states sitting ∼1.4 eV above the conduction band minimum. Experimentally, the band edge electron effective mass of Ta doped SnO2 was shown to be 0.23m 0, compared to 0.29m 0 seen with conventional Sb doping, explaining its ability to yield higher mobilities and conductivities.

Enhanced Photocatalytic and Antibacterial Ability of Cu-Doped Anatase TiO2 Thin Films: Theory and Experiment.

Multifunctional thin films which can display both photocatalytic and antibacterial activity are of great interest industrially. Here, for the first time, we have used aerosol-assisted chemical vapor deposition to deposit highly photoactive thin films of Cu-doped anatase TiO2 on glass substrates. The films displayed much enhanced photocatalytic activity relative to pure anatase and showed excellent antibacterial (vs Staphylococcus aureus and Escherichia coli) ability. Using a combination of transient absorption spectroscopy, photoluminescence measurements, and hybrid density functional theory calculations, we have gained nanoscopic insights into the improved properties of the Cu-doped TiO2 films. Our analysis has highlighted that the interactions between substitutional and interstitial Cu in the anatase lattice can explain the extended exciton lifetimes observed in the doped samples and the enhanced UV photoactivities observed.

Computationally Driven Discovery of Layered Quinary Oxychalcogenides: Potential p-Type Transparent Conductors?

n-type transparent conductors (TCs) are key materials in the modern optoelectronics industry. Despite years of research, the development of a high-performance p-type TC has lagged far behind that of its n-type counterparts, delaying the advent of "transparent electronics"-based p-n junctions. Here, we propose the layered oxysulfide [Cu2S2][Sr3Sc2O5] as a structural motif for discovering p-type TCs. We have used density functional theory to screen 24 compositions based on this motif in terms of their thermodynamic and dynamic stability and their electronic structure, thus predicting two p-type TCs and eight other stable systems with semiconductor properties. Following our predictions, we have successfully synthesized our best candidate p-type TC, [Cu2S2][Ba3Sc2O5], which displays structural and optical properties that validate our computational models. It is expected that the design principles emanating from this analysis will move the field closer to the realization of a high figure-of-merit p-type TC.

Origin of High-Efficiency Photoelectrochemical Water Splitting on Hematite/Functional Nanohybrid Metal Oxide Overlayer Photoanode after a Low Temperature Inert Gas Annealing Treatment.

A simplistic and low-cost method that dramatically improves the performance of solution-grown hematite photoanodes for solar-driven water splitting through incorporation of nanohybrid metal oxide overlayers was developed. By heating the α-Fe2O3/SnO2-TiO2 electrode in an inert atmosphere, such as argon or nitrogen, the photocurrent increased to over 2 mA/cm2 at 1.23 V versus a reversible hydrogen electrode, which is 10 times higher than that of pure hematite under 1 sun (100 mW/cm2, AM 1.5G) light illumination. For the first time, we found a significant morphological difference between argon and nitrogen gas heat-treated hematite films and discussed the consequences for photoresponse. The origin for the enhancement, probed via theoretical modeling, stems from the facile incorporation of low formation energy dopants into the Fe2O3 layer at the interface of the metal oxide nanohybrid overlayer, which decreases recombination by increasing the electrical conductivity of Fe2O3. These dopants diffuse from the overlayer into the α-Fe2O3 layer readily under inert gas heat treatment. This simple yet effective strategy could be applied to other dopants to increase hematite performance for solar energy conversion applications.

Dispelling the Myth of Passivated Codoping in TiO2.

Modification of TiO2 to increase its visible light activity and promote higher performance photocatalytic ability has become a key research goal for materials scientists in the past 2 decades. One of the most popular approaches proposed this as "passivated codoping", whereby an equal number of donor and acceptor dopants are introduced into the lattice, producing a charge neutral system with a reduced band gap. Using the archetypal codoping pairs of [Nb + N]- and [Ta + N]-doped anatase, we demonstrate using hybrid density functional theory that passivated codoping is not achievable in TiO2. Our results indicate that the natural defect chemistry of the host system (in this case n-type anatase TiO2) is dominant, and so concentration parity of dopant types is not achievable under any thermodynamic growth conditions. The implications of passivated codoping for band gap manipulation in general are discussed.

Phosphorus doped SnO2 thin films for transparent conducting oxide applications: synthesis, optoelectronic properties and computational models.

Phosphorus doped tin(iv) oxide (P:SnO2) films have been synthesised by an aerosol assisted chemical vapour deposition route. Triethyl phosphate was used as the phosphorus dopant source. The phosphorus concentration in solution was found to be key to electrical properties, with concentrations between 0.25-0.5 mol% phosphorus giving the lowest resistivities of the deposited films. The conductivity of the films synthesised improved on doping SnO2 with phosphorus, with resistivity values of 7.27 × 10-4 Ω cm and sheet resistance values of 18.2 Ω â–¡-1 achieved for the most conductive films. Phosphorus doping up to 1.0 mol% was shown to improve visible light transmission of the deposited films. The phosphorus doping also had a significant effect on film morphology, with varying microstructures achieved. The films were characterised by X-ray diffraction, scanning electron microscopy, UV/vis spectroscopy, Hall effect measurements and X-ray photoelectron spectroscopy. The data generated was used to build computational models of phosphorus as a dopant for SnO2, showing that the phosphorus acts as a shallow one-electron n-type donor allowing for good conductivities. Phosphorus does not suffer from self-compensation issues associated with other dopants, such as fluorine.

A novel laboratory-based hard X-ray photoelectron spectroscopy system.

Hard X-ray photoelectron spectroscopy (HAXPES) has seen continuous development since the first experiments in the 1970s. HAXPES systems are predominantly located at synchrotron sources due to low photoionization cross sections necessitating high X-ray intensities, which limits the technique's availability to a wide range of users and potential applications. Here, a new laboratory-based instrument capable of delivering monochromated X-rays with an energy of 9.25 keV and a microfocused 30 × 45 µm2 X-ray spot is introduced. The system gives an excellent energy resolution of below 500 meV coupled with good X-ray intensity. It allows stable measurements under grazing incidence conditions to maximise signal intensities. This article outlines the instrument behavior, showcases applications including bulk and multilayer measurements, and describes the overall performance of the spectrometer. This system presents an alternative to synchrotron-based experimental end stations and will help expand the number and range of HAXPES experiments performed in the future.

Chemical Vapor Deposition Synthesis and Optical Properties of Nb2O5 Thin Films with Hybrid Functional Theoretical Insight into the Band Structure and Band Gaps.

Nb2O5 is an important material able to exist in many polymorphs with unique optical properties and morphologies that are dependent on the synthetic route. Here we report a novel ambient-pressure chemical vapor deposition route to Nb2O5 via aerosol-assisted chemical vapor deposition. The amorphous as-deposited films were annealed in air to obtain the the three most stable crystal structures: orthorhombic, tetragonal, and monoclinic. The films were thoroughly characterized for their material properties, and an in-depth study into the optical properties was carried out using state-of-the-art hybrid functional theory that allowed more insight into the optical properties of the materials.

A single-source precursor approach to solution processed indium arsenide thin films.

This paper reports the synthesis of the novel single-source precursor, [{(MeInAs t Bu)3}2(Me2InAs( t Bu)H)2] and the subsequent first report of aerosol-assisted chemical vapour deposition of InAs thin films. Owing to the use of the single-source precursor, highly crystalline and stoichiometric films were grown at a relatively low deposition temperature of 450 °C. Core level XPS depth profiling studies showed some partial oxidation of the film surface, however this was self-limiting and disappeared on etch profiles. Valence band XPS analysis matched well with the simulated density of state spectrum. Hall effect measurements performed on the films showed that the films were n-type with promising resistivity (3.6 × 10-3 Ω cm) and carrier mobility (410 cm2 V-1 s-1) values despite growth on amorphous glass substrates.