Revisiting the δ-phase of poly(vinylidene fluoride) for solution-processed ferroelectric thin films.

Ferroelectric poly(vinylidene-fluoride) (PVDF) has, in the past, been proposed as an ideal candidate for data storage applications as it exhibits a bistable, remanent, polarization that can repeatedly be switched by an electric field. However, fabrication of smooth ferroelectric PVDF thin films, as required for microelectronic applications, is a long-standing problem. At present, the copolymer of PVDF with trifluoroethylene P(VDF-TrFE) is used, but the stack integrity and the limited thermal stability of its remanent polarization hamper large-scale integration. Here we show that smooth neat PVDF films can be made at elevated substrate temperature. On applying a short electrical pulse the ferroelectric polar δ-phase is formed, an overlooked polymorph of PVDF proposed 30 years ago, but never experimentally verified. The remanent polarization and coercive field are comparable to those of the copolymer. The enhanced thermal stability of the polarization is directly related to the high Curie temperature, whereas the ferroelectric properties are related to the molecular packing as derived from the refined crystal structure. The replacement of P(VDF-TrFE) by the commodity polymer PVDF may boost large-scale industrial applications.

Monolayer coverage and channel length set the mobility in self-assembled monolayer field-effect transistors.

The mobility of self-assembled monolayer field-effect transistors (SAMFETs) traditionally decreases dramatically with increasing channel length. Recently, however, SAMFETs using liquid-crystalline molecules have been shown to have bulk-like mobilities that are virtually independent of channel length. Here, we reconcile these scaling relations by showing that the mobility in liquid crystalline SAMFETs depends exponentially on the channel length only when the monolayer is incomplete. We explain this dependence both numerically and analytically, and show that charge transport is not affected by carrier injection, grain boundaries or conducting island size. At partial coverage, that is when the monolayer is incomplete, liquid-crystalline SAMFETs thus form a unique model system to study size-dependent conductance originating from charge percolation in two dimensions.

Controlled deposition of highly ordered soluble acene thin films: effect of morphology and crystal orientation on transistor performance.

Controlling the morphology of soluble small molecule organic semiconductors is crucial for the application of such materials in electronic devices. Using a simple dip-coating process we systematically vary the film drying speed to produce a range of morphologies, including oriented needle-like crystals. Structural characterization as well as electrical transistor measurements show that intermediate drying velocities produce the most uniformly aligned films.

High anisotropy of the field-effect transistor mobility in magnetically aligned discotic liquid-crystalline semiconductors.

A magnetic field has been utilized for producing highly oriented films of a substituted hexabenzocoronene (HBC). Optical microscopy studies revealed large area HBC monodomains that covered the entire film, while wide-angle X-ray measurements showed that the HBC molecules are aligned with their planes along the applied field. On the basis of this method, solution-processed field-effect transistors (FET) have been constructed with charge carrier mobilities of up to 10(-3) cm2/V.s, which are significantly enhanced with respect to the unaligned material. Exceptionally high mobility anisotropies of 25-75 for current flow parallel and perpendicular to the alignment direction have been measured as a function of the channel length. Atomic force microscopy performed on the FET structures reveals fibril superstructures that are oriented perpendicularly to the magnetic field direction, consisting of molecular columns with a slippage angle of 40 degrees between the molecules. For channel lengths larger than 2.5 mum, the fibrils are smaller than the electrode spacing, which adversely affects the device performance.

Organic thin-film electronics from vitreous solution-processed rubrene hypereutectics.

Electronic devices based on single crystals of organic semiconductors provide powerful means for studying intrinsic charge-transport phenomena and their fundamental electronic limits. However, for technological exploitation, it is imperative not to be confined to the tedious growth and cumbersome manipulation of molecular crystals-which generally show notoriously poor mechanical properties-but to be able to process such materials into robust architectures by simple and efficient means. Here, we advance a general route for facile fabrication of thin-film devices from solution. The key beneficial feature of our process-and the principal difference from existing vapour deposition and solution-processing schemes-is the incorporation of a glass-inducing diluent that enables controlled crystallization from an initial vitreous state of the organic semiconductor, formed in a selected area of the phase diagram of the two constituents. We find that the vitrifying diluent does not adversely affect device performance. Indeed, our environmentally stable, discrete rubrene-based transistors rival amorphous silicon devices, reaching saturated mobilities of up to 0.7 cm2 V-1 s-1, ON-OFF ratios of >or=10(6) and subthreshold slopes as steep as 0.5 V per decade. A nearly temperature-independent device mobility, indicative of a high crystalline quality of our solution-processed, rubrene-based films, corroborates these findings. Inverter and ring-oscillator structures are also demonstrated.

Epitaxial growth of InP nanowires on germanium.

The growth of III-V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III-V with group IV semiconductors. Here we demonstrate the principle of epitaxial growth of III-V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour-liquid-solid method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.