Characterization of nanoporous Al2O3 films at terahertz frequencies.

Terahertz birefringence in nanoporous Al2O3 films grown on Al substrates is characterized nondestructively by polarization-resolved terahertz spectroscopy. Sparse deconvolution is used to find the film thicknesses from the data, showing good agreement with the values measured directly by destructive cross-sectional field-emission scanning electron microscopy.

Manual, In situ, Real-Time Nanofabrication using Cracking through Indentation.

Nanofabrication has seen an increasing demand for applications in many fields of science and technology, but its production still requires relatively difficult, time-consuming, and expensive processes. Here we report a simple but very effective one dimensional (1D) nano-patterning technology that suggests a new nanofabrication method. This new technique involves the control of naturally propagating cracks initiated through simple, manually generated indentation, obviating the necessity of complicated equipment and elaborate experimental environments such as those that employ clean rooms, high vacuums, and the fastidious maintenance of processing temperatures. The channel fabricated with this technique can be as narrow as 10 nm with unlimited length and very high cross-sectional aspect ratio, an accomplishment difficult even for a state-of-the-art technology such as e-beam lithography. More interestingly, the fabrication speed can be controlled and achieved to as little as several hundred micrometers per second. Along with the simplicity and real-time fabrication capability of the technique, this tunable fabrication speed makes the method introduced here the authentic nanofabrication for in situ experiments.

Enhanced light output from the nano-patterned InP semiconductor substrate through the nanoporous alumina mask.

A significant enhancement in the light output from nano-patterned InP substrate covered with a nanoporous alumina mask was observed. A uniform nanohole array on an InP semiconductor substrate was fabricated by inductively coupled plasma reactive ion etching (ICP-RIE), using the nanoporous alumina mask as a shadow mask. The light output property of the semiconductor substrate was investigated via photoluminescence (PL) intensity measurement. The InP substrate with a nanohole array showed a more enhanced PL intensity compared with the raw InP substrate without a nanohole structure. After ICP-RIE etching, the light output from the nanoporous InP substrate covered with a nanoporous alumina mask showed fourfold enhanced PL intensity compared with the raw InP substrate. These results can be used as a prospective method for increasing the light output efficiency of optoelectronic devices.

Optical AND/OR gates based on monolithically integrated vertical cavity laser with depleted optical thyristor structure.

Latching optical switches and optical logic gates with AND and OR functionality are demonstrated for the first time by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure. The thyristors have a low threshold current of 0.65 mA and a high on/off contrast ratio of more than 50 dB. By simply changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated by using the oxidation process and has achieved high optical output power efficiency and a high sensitivity to the optical input light.