Broadband Room-Temperature Photodetection via InBiTe3 Nanosheet.

Broadband room-temperature photodetection has become a pressing need as application requirements for communication, imaging, spectroscopy, and sensing have evolved. Topological insulators (TIs) have narrow bandgap structures with a wide absorption spectral response range, which should meet the requirements of broadband detection. However, owing to their high carrier concentration and low carrier mobility resulting in poor noise equivalent power (NEP), they are generally considered unsuitable for photodetection. Here, InBiTe3 alloy nanosheet formed by doping In2Te3 into Bi2Te3(≈ 1:1) is utilized, effectively improving carrier mobility by over ten times while maintaining a narrow bandgap structure, to fabricate a broadband photodetector covering a wide response range from visible to millimeter wave (MMW). Under the synergistic multi-mechanism of the photoelectric effect in the visible-infrared region and the electromagnetic-induced potential well (EIW) effect in Terahertz band, the performance of NEP = 75 pW Hz-1/2 and response time τ ≈100 µs in visible to infrared band and the performance of NEP = 6.7 × 10-3 pW Hz-1/2, τ ≈8 µs in Terahertz region are achieved. The results demonstrate the promising prospects of topological insulator alloy (like InBiTe3) nanosheet in optoelectronic detection applications and provide a direction for the research into high-performance broadband photoelectric detectors via TIs.

Ultrafast All-Optical Switching Modulation of Terahertz Polarization Conversion Metasurfaces Based on Silicon.

With the development of ultrafast optics, all-optical control of terahertz wave modulation based on semiconductors has become an important technology of terahertz wave regulation. In this article, an ultrawideband terahertz linear polarization converter consisting of a double-layered metasurface is first proposed. The polarization conversion ratio of the device is ∼ 100% at 0.2-2.2 THz, and the transmission of copolarization approaches zero in the full band, which demonstrates the ability of high-purity output with rotating input linear polarization of 90° over an ultrawideband. By analysis of the surface current and electric field distribution, the physical mechanism of polarization conversion is elucidated. In addition, the influence of important geometric parameters on the device is discussed and analyzed in detail, which provides theoretical support for the design of high-performance polarization converters. More importantly, by introducing semiconductor silicon to construct an actively controllable metasurface, we design all-optical polarization converters based on a meta-atomic molecularization metasurface and all-dielectric metasurface; the dynamically tunable ultrawideband linear polarization conversion is realized under optical pumping, which solves the inherent problem of the performance of the metasurface polarization converters. Numerical simulation shows that the switching response of the two types of actively controllable devices under optical pumping is about 700 and 1800 ps, respectively, and can manipulate polarized wave conversion ultrafast, which brings new opportunities for all-optical controlled ultrafast terahertz polarization converters. Our results provide a feasible scheme for the development of state-of-the-art active and controllable ultrafast terahertz metasurface polarization converters, which have great application potential in short-range wireless terahertz communication, ultrafast optical switches, the transient spectrum, and optical polarization control devices.

Metasurface Terahertz Perfect Absorber with Strong Multi-Frequency Selectivity.

In this paper, we design a metasurface terahertz perfect absorber with multi-frequency selectivity and good incident angle compatibility using a double-squared open ring structure. Simulations reveal five selective absorption peaks located at 0-1.2 THz with absorption 94.50% at 0.366 THz, 99.99% at 0.507 THz, 95.65% at 0.836 THz, 98.80% at 0.996 THz, and 86.70% at 1.101 THz, caused by two resonant absorptions within the fundamental unit (fundamental mode of resonance absorption, FRA) and its adjacent unit (supermodel of resonance absorption, SRA) in the structure, respectively, when the electric field of the electromagnetic wave is incident perpendicular to the opening. The strong frequency selectivity at 0.836 THz with a Q-factor of 167.20 and 0.996 THz with a Q-factor of 166.00 is due to the common effect of the FRA and SRA. Then, the effect of polarized electromagnetic wave modes (TE and TM modes) at different angles of incidence (θ) and the size of the open rings on the device performance is analyzed. We find that for the TM mode, the absorption of the resonance peak changes only slightly at θ = 0-80°, which explains this phenomenon. The frequency shift of the absorption peaks caused by the size change of the open rings is described reasonably by an equivalent RLC resonant circuit. Next, by adjusting two-dimensional materials and photosensitive semiconductor materials embedded in the unit structure, the designed metasurface absorber has excellent tunable modulation. The absorption modulation depth (MD) reaches ≈100% using the conductivity of photosensitive semiconductor silicon (σSI-ps), indicating excellent control of the absorption spectrum. Our results can greatly promote the absorption of terahertz waves, absorption spectrum tunability, and frequency selectivity of devices, which are useful in the applications such as resonators, bio-detection, beam-controlled antennas, hyperspectral thermal imaging systems, and sensors.