Effect of Cu Film Thickness on Cu Bonding Quality and Bonding Mechanism.

In the hybrid bonding process, the final stage of chemical mechanical polishing plays a critical role. It is essential to ensure that the copper surface is recessed slightly from the oxide surface. However, this recess can lead to the occurrence of interfacial voids between the bonded copper interfaces. To examine the effects of copper film thickness on bonding quality and bonding mechanisms in this study, artificial voids were intentionally introduced at the bonded interfaces at temperatures of 250 °C and 300 °C. The results revealed that as the thickness of the copper film increases, there is an increase in the bonding fraction and a decrease in the void fraction. The variations in void height with different copper film thicknesses were influenced by the bonding mechanism and bonding fraction.

Enhanced Nanotwinned Copper Bonding through Epoxy-Induced Copper Surface Modification.

For decades, Moore's Law has neared its limits, posing significant challenges to further scaling it down. A promising avenue for extending Moore's Law lies in three-dimensional integrated circuits (3D ICs), wherein multiple interconnected device layers are vertically bonded using Cu-Cu bonding. The primary bonding mechanism involves Cu solid diffusion bonding. However, the atomic diffusion rate is notably low at temperatures below 300 °C, maintaining a clear and distinct weak bonding interface, which, in turn, gives rise to reliability issues. In this study, a new method of surface modification using epoxy resin to form fine grains on a nanotwinned Cu film was proposed. When bonded at 250 °C, the interfacial grains grew significantly into both sides of the Cu film. When bonded at 300 °C, the interfacial grains extended extensively, eventually eliminating the original bonding interface.

Effect of Compressive Stress on Copper Bonding Quality and Bonding Mechanisms in Advanced Packaging.

The thermal expansion behavior of Cu plays a critical role in the bonding mechanism of Cu/SiO2 hybrid joints. In this study, artificial voids, which were observed to evolve using a focused ion beam, were introduced at the bonded interfaces to investigate the influence of compressive stress on bonding quality and mechanisms at elevated temperatures of 250 °C and 300 °C. The evolution of interfacial voids serves as a key indicator for assessing bonding quality. We quantified the bonding fraction and void fraction to characterize the bonding interface and found a notable increase in the bonding fraction and a corresponding decrease in the void fraction with increasing compressive stress levels. This is primarily attributed to the Cu film exhibiting greater creep/elastic deformation under higher compressive stress conditions. Furthermore, these experimental findings are supported by the surface diffusion creep model. Therefore, our study confirms that compressive stress affects the Cu-Cu bonding interface, emphasizing the need to consider the depth of Cu joints during process design.

Enhanced Copper Bonding Interfaces by Quenching to Form Wrinkled Surfaces.

For decades, Moore's Law has been approaching its limits, posing a huge challenge for further downsizing to nanometer dimensions. A promising avenue to replace Moore's Law lies in three-dimensional integrated circuits, where Cu-Cu bonding plays a critical role. However, the atomic diffusion rate is notably low at temperatures below 300 °C, resulting in a distinct weak bonding interface, which leads to reliability issues. In this study, a quenching treatment of the Cu film surface was investigated. During the quenching treatment, strain energy was induced due to the variation in thermal expansion coefficients between the Si substrate and the Cu film, resulting in a wrinkled surface morphology on the Cu film. Grain growth was observed at the Cu-Cu bonding interface following bonding at 300 °C for 2 and 4 h. Remarkably, these procedures effectively eliminated the bonding interface.

Incorporation of Au Nanoparticles on ZnO/ZnS Core Shell Nanostructures for UV Light/Hydrogen Gas Dual Sensing Enhancement.

ZnO/ZnS nanocomposite-based nanostructures exhibit dual light and gas sensing capabilities. To further boost the light/dual sensing properties, gold nanoparticles (Au NPs) were incorporated into the core-shell structures. Multiple material characterizations revealed that Au NPs were successfully well spread and decorated on ZnO/ZnS nanostructures. Furthermore, our findings show that the addition of Au NPs could enhance both 365 nm UV light sensing and hydrogen gas sensing in terms of light/gas sensitivity and light/gas response time. We postulate that the optimization of gas/light dual sensing capability may result from the induced electric field and inhabitation of electron-hole recombination. Owing to their compact size, simple fabrication, and stable response, ZnO/ZnS/Au NPs-based light/gas dual sensors are promising for future extreme environmental monitoring.

Dependence of Photoresponsivity and On/Off Ratio on Quantum Dot Density in Quantum Dot Sensitized MoS2 Photodetector.

Non-radiative energy transfer (NRET) from quantum dots (QDs) to monolayer MoS2 has been shown to greatly enhance the photoresponsivity of the MoS2 photodetector, lifting the limitations imposed by monolayer absorption thickness. Studies were often performed on a photodetector with a channel length of only a few µm and an active area of a few µm2. Here, we demonstrate a QD sensitized monolayer MoS2 photodetector with a large channel length of 40 µm and an active area of 0.13 mm2. The QD sensitizing coating greatly enhances photoresponsivity by 14-fold at 1.3 µW illumination power, as compared with a plain monolayer MoS2 photodetector without QD coating. The photoresponsivity enhancement increases as QD coating density increases. However, QD coating also causes dark current to increase due to charge doping from QD on MoS2. At low QD density, the increase of photocurrent is much larger than the increase of dark current, resulting in a significant enhancement of the signal on/off ratio. As QD density increases, the increase of photocurrent becomes slower than the increase of dark current. As a result, photoresponsivity increases, but the on/off ratio decreases. This inverse dependence on QD density is an important factor to consider in the QD sensitized photodetector design.

Suppressing the Initial Growth of Sidewall GaN by Modifying Micron-Sized Patterned Sapphire Substrate with H3PO4-Based Etchant.

Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)-ex-situ AlN NL and in-situ GaN NL-were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface.

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate.

The crystal quality and light output power of GaN-based light-emitting diodes (LEDs) grown on concave patterned sapphire substrate (CPSS) were investigated. It was found that the crystal quality of GaN-based LEDs grown on CPSS improved with the decrease of the pattern space (percentage of c-plane). However, when the pattern space decreased to 0.41 µm (S0.41-GaN), the GaN crystallinity dropped. On the other hand, the light output power of GaN-based LEDs was increased with the decrease of the pattern space due to the change of the light extraction efficiency.