Amorphous shear bands in crystalline materials as drivers of plasticity.

Traditionally, the formation of amorphous shear bands in crystalline materials has been undesirable, because shear bands can nucleate voids and act as precursors to fracture. They also form as a final stage of accumulated damage. Only recently were shear bands found to form in undefected crystals, where they serve as the primary driver of plasticity without nucleating voids. Here we have discovered trends in materials properties that determine when amorphous shear bands will form and whether they will drive plasticity or lead to fracture. We have identified the materials systems that exhibit shear-band deformation, and by varying the composition, we were able to switch from ductile to brittle behaviour. Our findings are based on a combination of experimental characterization and atomistic simulations, and they provide a potential strategy for increasing the toughness of nominally brittle materials.

Control of Surface Chemical Reactions through Solid Stiffness.

Control of surface reactions is commonly achieved by modification of surface electronic structures. Here, we discover an alternative pathway for controlling surface reactions by tuning the mechanical stiffness of the underlying material. We find that in addition to the typically assumed surface electronic contribution right at the reactive site, the contribution from the deformation of the bulk region plays a vital role in controlling surface reactions. The underlying mechanism is an elastic relaxation of the solid, which depends on the material's stiffness and can be modified by tuning bulk stoichiometry. The effect of bulk stiffness on surface reactions has been demonstrated by considering hydrogen scission reaction and oxygen incorporation reaction during corrosion of amorphous SiC in water and air, respectively. Our results imply that tuning of bulk stiffness by modifying stoichiometry can provide an effective method for controlling surface reactions.

Enhancing the phase stability of ceramics under radiation via multilayer engineering.

In metallic systems, increasing the density of interfaces has been shown to be a promising strategy for annealing defects introduced during irradiation. The role of interfaces during irradiation of ceramics is more unclear because of the complex defect energy landscape that exists in these materials. Here, we report the effects of interfaces on radiation-induced phase transformation and chemical composition changes in SiC-Ti3SiC2-TiC x multilayer materials based on combined transmission electron microscopy (TEM) analysis and first-principles calculations. We found that the undesirable phase transformation of Ti3SiC2 is substantially enhanced near the SiC/Ti3SiC2 interface, and it is suppressed near the Ti3SiC2/TiC interface. The results have been explained by ab initio calculations of trends in defect segregation to the above interfaces. Our finding suggests that the phase stability of Ti3SiC2 under irradiation can be improved by adding TiC x , and it demonstrates that, in ceramics, interfaces are not necessarily beneficial to radiation resistance.

Strain effects on oxygen vacancy energetics in KTaO3.

Due to lattice mismatch between epitaxial films and substrates, in-plane strain fields are produced in the thin films, with accompanying structural distortions, and ion implantation can be used to controllably engineer the strain throughout the film. Because of the strain profile, local defect energetics are changed. In this study, the effects of in-plane strain fields on the formation and migration of oxygen vacancies in KTaO3 are investigated using first-principles calculations. In particular, the doubly positive charged oxygen vacancy (V) is studied, which is considered to be the main charge state of the oxygen vacancy in KTaO3. We find that the formation energies for oxygen vacancies are sensitive to in-plane strain and oxygen position. The local atomic configuration is identified, and strong relaxation of local defect structure is mainly responsible for the formation characteristics of these oxygen vacancies. Based on the computational results, formation-dependent site preferences for oxygen vacancies are expected to occur under epitaxial strain, which can result in orders of magnitude differences in equilibrium vacancy concentrations on different oxygen sites. In addition, all possible migration pathways, including intra- and inter-plane diffusions, are considered. In contrast to the strain-enhanced intra-plane diffusion, the diffusion in the direction normal to the strained plane is impeded under the epitaxial strain field. These anisotropic diffusion processes can further enhance site preferences.