Revealing the impact of thermal annealing on the perovskite/organic bulk heterojunction interface in photovoltaic devices.

Perovskite/organic bulk heterojunction (BHJ) integrated solar cells have tremendous development potential to exceed the Shockley-Queisser limit efficiency of single-junction photovoltaics, due to the merits of spectra response extension. However, the presence of energy level barriers and severe non-radiative recombination at the interface between perovskite and BHJ greatly hindered the transport and collection of charge carriers, usually leading to large Voc and photocurrent loss, as well as the stability degradation of integrated devices. Therefore, investigating the interface properties of perovskite/BHJ is crucial for understanding the charge transport process and enhancing device performance. In this study, we effectively regulated the interface properties and charge transport in perovskite/BHJ integrated devices using a thermal annealing process. Using Kelvin probe microscopy, photoluminescence, and transient absorption spectroscopy, we revealed that moderate annealing treatment would contribute to forming close interface contact and provide more channels or pathways for charge transfer, which is advantageous for the interface charge collection and device performance. In addition, the lone pair electrons of acyl, thiophene and pyrrole function groups in polymer PDPP3T and PCBM can act as the Lewis base and provide electrons to the under-coordinated lead atoms or clusters in the perovskite, effectively passivating traps on the surface and grain boundaries of the perovskite through Lewis acid-base coordination. Finally, we improved the photovoltaic conversion efficiency of the device to 21.57% with enhanced stability using an optimized thermal annealing process. This study provides a comprehensive understanding of the integrated perovskite/BHJ interface properties, which could be extended to other optoelectronic devices based on a similar integrated structure.

Impact of health education on promoting influenza vaccination health literacy in primary school students: a cluster randomised controlled trial protocol.

INTRODUCTION: Influenza is a major public health threat, and vaccination is the most effective prevention method. However, vaccination coverage remains suboptimal. Low health literacy regarding influenza vaccination may contribute to vaccine hesitancy. This study aims to evaluate the effect of health education interventions on influenza vaccination rates and health literacy. METHODS AND ANALYSIS: This cluster randomised controlled trial will enrol 3036 students in grades 4-5 from 20 primary schools in Dongguan City, China. Schools will be randomised to an intervention group receiving influenza vaccination health education or a control group receiving routine health education. The primary outcome is the influenza vaccination rate. Secondary outcomes include health literacy levels, influenza diagnosis rate, influenza-like illness incidence and vaccine protection rate. Data will be collected through questionnaires, influenza surveillance and self-reports at baseline and study conclusion. ETHICS AND DISSEMINATION: Ethical approval has been sought from the Ethics Committee of the School of Public Health, Sun Yat-sen University. Findings from the study will be made accessible to both peer-reviewed journals and key stakeholders. TRIAL REGISTRATION NUMBER: NCT06048406.

Reversible Stacking of 2D ZnIn2 S4 Atomic Layers for Enhanced Photocatalytic Hydrogen Evolution.

It is technically challenging to reversibly tune the layer number of 2D materials in the solution. Herein, a facile concentration modulation strategy is demonstrated to reversibly tailor the aggregation state of 2D ZnIn2 S4 (ZIS) atomic layers, and they are implemented for effective photocatalytic hydrogen (H2 ) evolution. By adjusting the colloidal concentration of ZIS (ZIS-X, X = 0.09, 0.25, or 3.0 mg mL-1 ), ZIS atomic layers exhibit the significant aggregation of (006) facet stacking in the solution, leading to the bandgap shift from 3.21 to 2.66 eV. The colloidal stacked layers are further assembled into hollow microsphere after freeze-drying the solution into solid powders, which can be redispersed into colloidal solution with reversibility. The photocatalytic hydrogen evolution of ZIS-X colloids is evaluated, and the slightly aggregated ZIS-0.25 displays the enhanced photocatalytic H2 evolution rates (1.11 µmol m-2 h-1 ). The charge-transfer/recombination dynamics are characterized by time-resolved photoluminescence (TRPL) spectroscopy, and ZIS-0.25 displays the longest lifetime (5.55 µs), consistent with the best photocatalytic performance. This work provides a facile, consecutive, and reversible strategy for regulating the photo-electrochemical properties of 2D ZIS, which is beneficial for efficient solar energy conversion.

Fast, Multi-Bit, and Vis-Infrared Broadband Nonvolatile Optoelectronic Memory with MoS2 /2D-Perovskite Van der Waals Heterojunction.

Nonvolatile optoelectronic memory (NVOM) integrating the functions of optical sensing and long-term memory can efficiently process and store a large amount of visual scene information, which has become the core requirement of multiple intelligence scenarios. However, realizing NVOM with vis-infrared broadband response is still challenging. Herein, the room temperature vis-infrared broadband NVOM based on few-layer MoS2 /2D Ruddlesden-Popper perovskite (2D-RPP) van der Waals heterojunction is realized. It is found that the 2D-RPP converts the initial n-type MoS2 into p-type and facilitates hole transfer between them. Furthermore, the 2D-RPP rich in interband states serves as an effective electron trapping layer as well as broadband photoresponsive layer. As a result, the dielectric-free MoS2 /2D-RPP heterojunction enables the charge to transfer quickly under external field, which enables a large memory window (104 V), fast write speed of 20 µs, and optical programmable characteristics from visible light (405 nm) to telecommunication wavelengths (i.e., 1550 nm) at room temperature. Trapezoidal optical programming can produce up to 100 recognizable states (>6 bits), with operating energy as low as 5.1 pJ per optical program. These results provide a route to realize fast, low power, multi-bit optoelectronic memory from visible to the infrared wavelength.

A Perovskite Photodetector Crossbar Array by Vapor Deposition for Dynamic Imaging.

With the development of perovskite photodetectors, integrating photodetectors into array image sensors is the next target to pursue. The major obstacle to integrating perovskite photodiodes for dynamic imaging is the optoelectrical crosstalk among the pixels. Herein, a perovskite photodiode-blocking diode (PIN-BD) crossbar array with pixel-wise rectifying property by the vapor deposition method is presented. The PIN-BD shows a large rectification ratio of 3.3 × 102 under illumination, suppressing electrical crosstalk to as small as 8.0% in the imaging array. The fast response time of 72.8 ns allows real-time image acquisition by over 25 frames per second. The imaging sensor exhibits excellent imaging capability with a large linear dynamic range of 112 dB with 4096 gray levels and weak light sensitivity under 1.2 lux.

Static and Dynamic Demonstration of the Ecological Level of Ethnic Cultural Industries Based on the Internet of Things and Environmental Responsibility.

The cultural industry of ethnic minorities carries the wisdom of many ancients. In today's modernization, ethnic minority cultural industry products can still impress people's hearts with exquisite handicrafts, natural materials, and strong culture. The rise in demand for ethnic cultural products will bring about an increase in the demand for raw materials for handmade products, which is bound to have an impact on the environment. This paper is aimed at modeling and analyzing the ecological level of minority cultural industries based on the background of the Internet of Things (IoT) and environmental responsibility. In the experiment, this paper analyzed the ecological level of the traditional fish skin industry by taking the Hezhe people in Heilongjiang as an example. Aiming at the cultural industry of the Hezhe people, this paper selected the fish skin industry as the object of empirical analysis from the fish culture it represents. According to the ecological level of the industry, this paper selected the three first-level indicators of production energy saving level, ecological environmental protection level, and production emission reduction level and its 12 subordinate second-level indicators to model and analyze the fish skin industry of the Hezhe people. The analysis results showed that the industrial ecological level of the Hezhe fish skin industry in the past 16 years reached the standard rate of more than 75%. However, the ecological level index for the three years of 2018, 2019, and 2020 was between 0.3 and 0.5, which indicated that the ecological level in these three years was very low. This was caused by the mechanization of the handicraft industry in recent years.

High-κ van der Waals Oxide MoO3 as Efficient Gate Dielectric for MoS2 Field-Effect Transistors.

Two-dimensional van der Waals crystals (2D vdW) are recognized as one of the potential materials to solve the physical limits caused by size scaling. Here, vdW metal oxide MoO3 is applied with the gate dielectric in a 2D field-effect transistor (FET). Due to its high dielectric constant and the good response of MoS2 to visible light, we obtained a field effect transistor for photodetection. In general, the device exhibits a threshold voltage near 0 V, Ion/Ioff ratio of 105, electron mobility about 85 cm2 V-1 s-1 and a good response to visible light, the responsivity is near 5 A/W at low laser power, which shows that MoO3 is a potential material as gate dielectric.

Optoelectronic Properties of α-MoO3 Tuned by H Dopant in Different Concentration.

The optoelectronic properties of layered α-MoO3 are greatly limited due to its wide band gap and low carrier concentration. The insertion of hydrogen (H) can effectively tune the band structure and carrier concentration of MoO3. Herein, first-principles calculations were performed to unravel the physical mechanism of a H-doped α-MoO3 system. We found that the modulation of the electronic structure of H-doped MoO3 depends on the doping concentration and position of the H atoms. It was found that the band gap decreases at 8% doping concentration due to the strong coupling between Mo-4d and O-2p orbits when H atoms are inserted into the interlayer. More interestingly, the band gap decreases to an extreme due to the Mo-4d orbit when all the H atoms are inserted into the intralayer only, which has a remarkable effect on light absorption. Our research provides a comprehensive theoretical discussion on the mechanism of H-doped α-MoO3 from the doping positions and doping concentrations, and offers useful strategies on doping modulation of the photoelectric properties of layered transition metal oxides.

Reciprocally Photovoltaic Light-Emitting Diode Based on Dispersive Perovskite Nanocrystal.

Integrating highly efficient photovoltaic (PV) function into light-emitting diodes (LEDs) for multifunctional display is of great significance for compact low-power electronics, but it remains challenging. Herein, it is demonstrated that solution engineered perovskite nanocrystals (PNCs, ≈100 nm) enable efficient electroluminescence (EL) and PV performance within a single device through tailoring the dispersity and interface. It delivers the maximum brightness of 490 W sr-1  m-2 at 2.7 V and 23.2% EL external quantum efficiency, a record value for near-infrared perovskite LED, as well as 15.23% PV efficiency, among the highest value for nanocrystal perovskite solar cells. The PV-EL performance is well in line with the reciprocity relation. These all-solution-processed PV-LED devices open up viable routes to a variety of advanced applications, from touchless interactive screens to energy harvesting displays and data communication.

Photoinduced Multi-Bit Nonvolatile Memory Based on a van der Waals Heterostructure with a 2D-Perovskite Floating Gate.

The development of floating-gate nonvolatile memory (FGNVM) is limited by the charge storage, retention and transfer ability of the charge-trapping layer. Here, it is demonstrated that due to the unique alternate inorganic/organic chain structure and superior optical sensitivity, an insulating 2D Ruddlesden-Popper perovskite (2D-RPP) layer can function both as an excellent charge-storage layer and a photosensitive layer. Optoelectronic memory composed of a MoS2 /hBN/2D-RPP (MBR) van der Waals heterostructure is demonstrated. The MBR device exhibits unique light-controlled charge-storage characteristics, with maximum memory window up to 92 V, high on/off ratio of 104 , negligible degeneration over 103  s, >1000 program/erase cycles, and write speed of 500 µs. Dependent on the initial states, the MBR optoelectronic memory can be programmed in both positive photoconductivity (PPC) and negative photoconductivity (NPC) modes, with up to 11 and 22 distinct resistance states, respectively. The optical program power for each bit is as low as 36/10 pJ for PPC/NPC. The results not only reveal the potential of 2D-RPP as a superior charge-storage medium in floating-gate memory, but also provides an effective strategy toward fast, low-power and stable optical multi-bit storage and neuromorphic computing.

Van der Waals MoS2/Two-Dimensional Perovskite Heterostructure for Sensitive and Ultrafast Sub-Band-Gap Photodetection.

Two-dimensional (2D) hybrid perovskites have been extensively studied as the promising light-sensitive materials in the photodetectors owing to their improved structural stability over that of their three-dimensional counterparts. However, the application of the 2D perovskite-based photodetector in the near-infrared (NIR) region is obstructed by the large intrinsic optical band gap. Herein, we develop a novel van der Waals heterostructure composed of few-layer 2D perovskite/MoS2 nanoflakes, which exhibits high-sensitivity detection performance over a broad spectral region, from the visible region to the telecommunication wavelength (i.e., 1550 nm). In particular, the photoresponsivity and specific detectivity under an 860 nm laser reach 121 A W-1 and 4.3 × 1014 Jones, respectively, whereas the individual nanoflakes show no response under the same wavelength. Meanwhile, the response time at the microsecond (µs) level is obtained, shortened by around 3 orders of magnitude compared to that of the constituting layers. The sensitive and ultrafast photoresponse at the NIR wavelength stems from the strong interlayer transition of sub-band-gap photons and the rapid separation of the photogenerated carriers by the built-in field within the heterojunction area. Our results not only provide an effective approach to achieve sub-band-gap photodetection in 2D perovskite-based structures but also suggest a universal strategy to fabricate high-performance optoelectronic devices.

Construction of Schottky contact by modification with Pt particles to enhance the performance of ultra-long V2O5 nanobelt photodetectors.

Schottky-contacted nanosensors have attracted extensive attention due to their high sensitivity and fast response time. In this article, we proved that the construction of Schottky contact by Pt nanoparticles (NPs) decoration can effectively improve the performance of V2O5 nanobelts photodetectors. After modified by Pt NPs, the photocurrent of V2O5 nanobelts is increased by more than two orders of magnitude, and the photoresponse speed is improved by at least three orders of magnitude. Detailed studies have shown that the performance enhancement is attributed to the formation of the Schottky contact at the electrode-semiconductor interface due to the decrease of surface gas adsorption and the increase of V2O5 work function after Pt NPs modification. The strong built-in field in the Schottky barrier region will quickly separate photogenerated carriers, thereby reducing the electron-hole recombination rate, resulting in the fast response time and an increase in the free carrier density. Moreover, it is found that this enhancement effect can be regulated by controlling the pressure to modulating the Schottky barrier height at the interface. Overall, the Pt NPs-modified V2O5 nanobelts photodetector exhibits a broad response spectrum (visible to near infrared), fast rise/fall response time (less than 6.12/6.15 ms), high responsivity (5.6 A/W), and high specific detectivity (6.9 × 108 Jones). This study demonstrates the feasibility of building a Schottky barrier to enhance the photodetection performance, which provides a general and effective strategy towards the construction and its practical application of supersensitive and fast-response nanosensors.

Highly Sensitive and Ultra-Broadband VO2(B) Photodetector Dominated by Bolometric Effect.

In this study, Wadsley B phase vanadium oxide (VO2(B)) with broad-band photoabsorption ability, a large temperature coefficient of resistance (TCR), and low noise was developed for uncooled broad-band detection. By using a freestanding structure and reducing the size of active area, the VO2(B) photodetector shows stable and excellent performances in the visible to the terahertz region (405 nm to 0.88 mm), with a peak TCR of -4.77% K-1 at 40 °C, a peak specific detectivity of 6.02 × 109 Jones, and a photoresponse time of 83 ms. A terahertz imaging ability with 30 × 30 pixels was demonstrated. Scanning photocurrent imaging and real-time temperature-photocurrent measurements confirm that a photothermal-type bolometric effect is the dominating mechanism. The study shows the potential of VO2(B) in applications as a new type of uncooled broad-band photodetection material and the potential to further raise the performance of broad-band photodetectors by structural design.

Defect Etching of Phase-Transition-Assisted CVD-Grown 2H-MoTe2.

2D molybdenum ditelluride (MoTe2 ) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe2 with large grain size and low density of grain boundary. However, because of the lack of precise control of the growth condition, some defects including the amorphous regions and grain boundaries in 2H-MoTe2 are hardly avoidable. Here, a facile method of selectively etching defects in large-scale CVD-grown 2H-MoTe2 by triiodide ion (I3 - ) solution is reported. The defect etching is attributed to the reduced lattice symmetry, high chemisorption activity and high conductivity of the defects due to the high density of Te vacancies. The treated 2H-MoTe2 shows the suppressed hysteresis in the electrical transfer curve, enhances hole mobility and the higher effective barrier height on the metal contact, suggesting the decreased density of defects. Further chemical analysis indicates that the 2H-MoTe2 is not damaged or doped by I3 - solution during the etching process. This simple and low-cost post-processing method is effective for etching the defects in large-area 2H-MoTe2 for high-performance device applications.

Plasma Oxidized Ti3C2Tx MXene as Electron Transport Layer for Efficient Perovskite Solar Cells.

Recently, the two-dimensional material Ti3C2Tx MXene has attracted interest from researchers in perovskite solar cells (PSCs) with its great advantages in terms of high transmittance, high conductivity, tunable work function, and solution processability. However, the MXene-based PSC performance has still been inferior to that of the traditional TiO2- or SnO2-based counterpart up until now. Some critical issues regarding to the MXene/perovskite interface still have not been well addressed. Herein, we used the Ti3C2Tx MXene as electron transport layer in PSCs via a room-temperature solution process followed by oxygen plasma treatment. Various characterization techniques were taken to establish the correlation between the surface properties and termination groups of MXene. We showed that oxygen plasma treatment could break parts of Ti-C bonds and generate abundant Ti-O bonds randomly distributed on MXene. The surface modification resulted in tunable work functions of MXene, as well as reduced trap states and improved electron transport close to the interface. In addition, the surface tension of MXene and corresponding perovskite morphology were thoroughly investigated by the contact angle and topography measurements. High-resolution XPS spectra indicated the Pb-O interactions between perovskite and MXene, which contributed to the device stability improvement.

Construction of an Iodine Diffusion Barrier Using Network Structure Silicone Resin for Stable Perovskite Solar Cells.

Long-term stability of organic-inorganic hybrid perovskite solar cells (PSCs) is inhibited by ion diffusion. Herein, we introduce a thermally stable and hydrophobic silicone resin layer with a network structure as an interfacial layer between the perovskite and the hole-transporting layer (HTL). Experimental and theoretical investigations confirm that the small Si-O-Si unit in the network forms both Si-I and Pb-O bonds with the perovskite surface, which physically and chemically inhibit the diffusion and self-release of iodine. Besides, the silicone resin layer suppresses the thermal crystallization of spiro-OMeTAD and optimizes the interfacial energy level alignment for hole extraction. The power conversion efficiency (PCE) of a perovskite solar cell with a silicone resin layer is improved to 21.11%. The device maintains more than 90.1% of its original PCE after 1200 h under 85 °C thermal stress, 99.6% after 2000 h under RH ∼55 ± 5%, and 83% of its original PCE after light soaking in air for 1037 h.

Polycrystalline Few-Layer Graphene as a Durable Anticorrosion Film for Copper.

Corrosion of metals in atmospheric environments is a worldwide problem in industry and daily life. Traditional anticorrosion methods including sacrificial anodes or protective coatings have performance limitations. Here, we report atomically thin, polycrystalline few-layer graphene (FLG) grown by chemical vapor deposition as a long-term protective coating film for copper (Cu). A six-year old, FLG-protected Cu is visually shiny and detailed material characterizations capture no sign of oxidation. The success of the durable anticorrosion film depends on the misalignment of grain boundaries between adjacent graphene layers. Theoretical calculations further found that corrosive molecules always encounter extremely high energy barrier when diffusing through the FLG layers. Therefore, the FLG is able to prevent the corrosive molecules from reaching the underlying Cu surface. This work highlights the interesting structures of polycrystalline FLG and sheds insight into the atomically thin coatings for various applications.

Gold Enhanced Graphene-Based Photodetector on Optical Fiber with Ultrasensitivity over Near-Infrared Bands.

Graphene has been widely used in photodetectors; however its photoresponsivity is limited due to the intrinsic low absorption of graphene. To enhance the graphene absorption, a waveguide structure with an extended interaction length and plasmonic resonance with light field enhancement are often employed. However, the operation bandwidth is narrowed when this happens. Here, a novel graphene-based all-fiber photodetector (AFPD) was demonstrated with ultrahigh responsivity over a full near-infrared band. The AFPD benefits from the gold-enhanced absorption when an interdigitated Au electrode is fabricated onto a Graphene-PMMA film covered over a side-polished fiber (SFP). Interestingly, the AFPD shows a photoresponsivity of >1 × 104 A/W and an external quantum efficiency of >4.6 × 106% over a broadband region of 980-1620 nm. The proposed device provides a simple, low-cost, efficient, and robust way to detect optical fiber signals with intriguing capabilities in terms of distributed photodetection and on-line power monitoring, which is highly desirable for a fiber-optic communication system.

Quantitative Determination of the Vertical Segregation and Molecular Ordering of PBDB-T/ITIC Blend Films with Solvent Additives.

The vertical component distribution of bulk heterojunction (BHJ) active film shows a significant impact on determining the device performance in polymer solar cells (PSCs). Processing solvent additives are well known for regulating the BHJ active layer morphology; however, there are few reports regarding the quantitative evaluation of the effect. Herein, a study of the quantitative determination of the vertical segregation in combination of molecular ordering of PBDB-T/ITIC blend films with various 1,8-diiodooctane (DIO) contents is provided. A 0.5% (volume ratio) DIO-added blend film achieves the highest power conversion efficiency of 10.75%. The reduced performance of the PSCs resulted from the excessive vertical component segregation and overcrystallization investigated by various techniques. X-ray photoelectron spectroscopy indicates that DIO aggravates the PBDB-T enrichment region at the air side. Neutron reflectivity further quantitatively figures out the phase separation effect. Although increased crystallinity of ITIC and a higher face-on ratio of PBDB-T in active layer were obtained with increased DIO content approved by grazing-incidence wide-angle X-ray scattering (GIWAXS), the enhanced vertical distribution along with the enhanced crystal size of ITIC leads to the reduced performance of the PSCs due to the reduced carrier transportation paths between donor and acceptor.

Molecule occupancy by a n-butylamine treatment to facilitate the conversion of PbI2 to perovskite in sequential deposition.

Herein, we propose a new approach of molecule occupancy via a vapor treatment to facilitate the conversion of PbI2 to perovskite in sequential deposition. We have shown that the morphology of PbI2 and the subsequent crystallization of perovskite can be effectively tuned, thus leading to the elimination of residual PbI2 and promotion of perovskite growth.