Evidence for Band Renormalizations in Strong-Coupling Superconducting Alkali-Fulleride Films.

There has been a long-standing debate about the mechanism of the unusual superconductivity in alkali-intercalated fullerides. In this Letter, using high-resolution angle-resolved photoemission spectroscopy, we systematically investigate the electronic structures of superconducting K_{3}C_{60} thin films. We observe a dispersive energy band crossing the Fermi level with the occupied bandwidth of about 130 meV. The measured band structure shows prominent quasiparticle kinks and a replica band involving the Jahn-Teller active phonon modes, which reflects strong electron-phonon coupling in the system. The electron-phonon coupling constant is estimated to be about 1.2, which dominates the quasiparticle mass renormalization. Moreover, we observe an isotropic nodeless superconducting gap beyond the mean-field estimation (2Δ/k_{B}T_{c}≈5). Both the large electron-phonon coupling constant and large reduced superconducting gap suggest a strong-coupling superconductivity in K_{3}C_{60}, while the electronic correlation effect is suggested by the observation of a waterfall-like band dispersion and the small bandwidth compared with the effective Coulomb interaction. Our results not only directly visualize the crucial band structure but also provide important insights into the mechanism of the unusual superconductivity of fulleride compounds.

Temperature and excitation wavelength dependence of circular and linear photogalvanic effect in a three dimensional topological insulator Bi2Se3.

The circular (CPGE) and linear photogalvanic effect (LPGE) of a three-dimensional topological insulator Bi2Se3 thin film of seven quintuple layers excited by near-infrared (1064 nm) and mid-infrared (10.6 [Formula: see text]m) radiations have been investigated. The comparison of the CPGE current measured parallel and perpendicular to the incident plane, together with the comparison of the CPGE current under front and back illuminations, indicates that the CPGE under front illumination of 1064 nm light is dominated by the top surface states of the Bi2Se3 thin film. The CPGE current excited by 10.6 [Formula: see text]m light is about one order larger than that excited by 1064 nm light, which may be attributed to the smaller cancelation effect of the CPGE generated in the two-dimensional electron gas when excited by 10.6 [Formula: see text]m light. Under the excitation of 1064 nm light, the LPGE current is dominated by the component which shows an even parity of incident angles, while the LPGE current excited by 10.6 [Formula: see text]m light is mainly contributed by the component which is an odd parity of incident angles. Both of the CPGE and LPGE currents excited by 1064 nm decrease with increasing temperature, which may be owing to the decrease of the momentum relaxation time and the stronger electron-electron scattering with increasing temperature, respectively.

Topological edge states in a high-temperature superconductor FeSe/SrTiO3(001) film.

Superconducting and topological states are two most intriguing quantum phenomena in solid materials. The entanglement of these two states, the topological superconducting state, will give rise to even more exotic quantum phenomena. While many materials are found to be either a superconductor or a topological insulator, it is very rare that both states exist in one material. Here, we demonstrate by first-principles theory as well as scanning tunnelling spectroscopy and angle-resolved photoemission spectroscopy experiments that the recently discovered 'two-dimensional (2D) superconductor' of single-layer FeSe also exhibits 1D topological edge states within an energy gap of ∼40 meV at the M point below the Fermi level. It is the first 2D material that supports both superconducting and topological states, offering an exciting opportunity to study 2D topological superconductors through the proximity effect.

Selection of conformational states in self-assembled surface structures formed from an oligo(naphthylene-ethynylene) 3-bit binary switch.

Supra-molecular self-assembly on surfaces often involves molecular conformational flexibility which may act to enrich the variation and complexity of the structures formed. However, systematic and explicit investigations of how molecular conformational states are selected in surface self-assembly processes are relatively scarce. Here, we use a combination of high-resolution scanning tunneling microscopy and Density Functional Theory (DFT) calculations to investigate self-assembly for a custom-designed molecule capable of assuming eight distinct surface conformations (four enantiomeric pairs). The conformations result from binary positions of n = 3 naphtalene units on a linear oligo(naphthylene-ethynylene) backbone. On Au(111), inter-molecular interactions involving carboxyl and bulky tert-butyl-phenyl functional groups induce the molecules to form two ordered phases with brick-wall and lamella structure, respectively. These structures each involve molecules in two conformational states, and there is a clear separation between the conformers involved in the two types of structures. On Cu(111), individual molecules isolated by carboxylate-substrate binding show a distribution involving all possible conformational states. Together these observations imply selection and adaptation of conformational states upon molecular self-assembly. From DFT modeling and statistical analysis of the molecular conformations, the observed selection of conformational states is attributed to steric interaction between the naphthalene units. The present study enhances our understanding of how ordering and selection of molecular conformations is controlled by intermolecular interactions in a complex situation with many distinct conformational states for the participating molecules.

Interface ferroelectric transition near the gap-opening temperature in a single-unit-cell FeSe film grown on Nb-Doped SrTiO3 substrate.

We report findings of strong anomalies in both mutual inductance and inelastic Raman spectroscopy measurements of single-unit-cell FeSe film grown on Nb-doped SrTiO3, which occur near the temperature where the superconductinglike energy gap opens. Analysis suggests that the anomaly is associated with a broadened ferroelectric transition in a thin layer near the FeSe/SrTiO3 interface. The coincidence of the ferroelectric transition and gap-opening temperatures adds credence to the central role played by the film-substrate interaction on the strong Cooper pairing in this system. We discuss scenarios that could explain such a coincidence.

Electron standing waves on the GaN(0001)-pseudo (1 × 1) surface: a FT-STM study at room temperature.

We report the direct imaging of standing waves on a GaN(0001)-pseudo (1 × 1) metallic surface, which consists of two atomic Ga layers with the top layer incommensurate. Two types of periodic oscillation are observed by scanning tunneling microscopy at room temperature. The longer wavelength standing waves are due to electron scattering by dislocation-induced steps and two-dimensional InN islands. The localized shorter wavelength waves are attributed to a structural transition of the incommensurate Ga bilayer to a tetrahedral Ga bilayer after the growth of the InN islands.

Vortex properties of two-dimensional superconducting Pb films.

Using low temperature scanning tunnelling microscopy/spectroscopy (STM/STS) we have investigated the vortex behaviours of two-dimensional superconducting Pb films at different thicknesses. STS at the vortex core shows an evolution of electronic states with film thickness. Transition from the clean limit to the dirty limit of superconductivity is identified, which can be ascribed to the decreased electronic mean free path induced by stronger scattering from the disordered interface at smaller thicknesses. A magnetic field dependent vortex core size is observed even for such a low- κ superconductor. The weak pinning induced by surface defects leads to the formation of a distorted hexagonal vortex lattice.

Atomic-scale imaging and manipulation of ridges on epitaxial graphene on 6H-SiC(0001).

Ridges are observed on epitaxial graphene on 6H-SiC(0001) by scanning tunneling microscopy (STM). Atomic resolution imaging reveals that they are in fact bulged regions of the graphene layer, occurring as a result of bending and buckling to relieve the compressive strain. Furthermore, their length, direction, and distribution can be manipulated, and new ones can even be created by the tip-surface interactions during STM imaging. The lower limit of terrace size for ridge formation is estimated to be approximately 80 nm, and nearly ridge-free graphene film can be obtained on vicinal 3.5 degrees miscut substrates.

Comparative studies of pentacene and perfluoropentacene grown on a Bi(0001) surface.

We report two distinct growth modes of pentacene (PEN) and perfluoropentacene (PFP) films on a Bi(0001) substrate investigated by scanning tunneling microscopy (STM). PEN grows epitaxially on Bi(0001) at room temperature (RT), resulting in the formation of bulk-like crystalline films. In contrast, submonolayer PFP forms a two-dimensional (2D) liquid-like phase with PFP molecules loosely bound on Bi(0001). Beyond one monolayer, the PFP molecules diffuse over very long distances to aggregate into three-dimensional (3D) islands, leading to a rough film morphology. Utilizing the stacking interaction at the PFP/PEN interface, we deposited PFP on the template of an ordered PEN monolayer formed on Bi. It is found that PFP molecules nucleate into ordered crystalline islands with PFP molecules standing-up. The different morphologies of PEN and PFP overlayers can be understood in terms of perfluorination induced decoupling of PFP molecules from the Bi substrate below.

Erratum: ZnO-based MIS photodetectors.

[This corrects the article DOI: 10.1016/j.sna.2007.06.006.].

Ultrahigh vacuum, variable temperature, dual scanning tunneling microscope system operating under high magnetic field.

We present a dual scanning tunneling microscope (DSTM) system operating between 2.2 K and room temperature, in a split-coil superconducting magnetic field up to 12 T and in ultrahigh vacuum. The DSTM consists of two compact STMs, each having x, y, and z coarse positioning piezoelectric steppers with embedded capacitive positioning sensor for navigation. Each STM can be operated independently and can achieve atomic resolution. The DSTM and the sample is configured in a way that allows the magnetic field orientation to be varied continuously from normal to parallel to the sample surface. Together with the sample, the DSTM can form a nanometer scale three terminal setup for transport measurement.

Generalized electron counting in determination of metal-induced reconstruction of compound semiconductor surfaces.

Based on theoretical analysis, first-principles calculations, and experimental observations, we establish a generic guiding principle, embodied in generalized electron counting (GEC), that governs the surface reconstruction of compound semiconductors induced by different metal adsorbates. Within the GEC model, the adsorbates serve as an electron bath, donating or accepting the right number of electrons as the host surface chooses a specific reconstruction that obeys the classic electron-counting model. The predictive power of the GEC model is illustrated for a wide range of metal adsorbates.

Rabi oscillation damped by exciton leakage and Auger capture in quantum dots.

The decoherence of Rabi oscillation (RO) caused by biexciton, population leakage to the wetting layer (WL), and Auger capture in semiconductor quantum dots is theoretically analyzed with multilevel optical Bloch equations. The corresponding effects on the quality factor of RO are also discussed. We have found that the biexciton effect is relatively trifling, as the pulse duration is longer than 5 ps. The population leakage to the WL leads to a decrease of the RO average even though the damping rate is similar to that observed in the experiment. Auger capture in quantum dots results in RO damping that is consistent with the experimental data, which implies that Auger capture is an important decoherence process in quantum dots.

Surface and interface studies of GaN epitaxy on Si(111) via buffer layers.

Gallium nitride films, epitaxially grown on Si(111) via a lattice-matched ZrB(2) buffer layer by plasma-assisted molecular beam epitaxy, have been studied in situ by noncontact atomic force microscopy and also in real time by reflection high-energy electron diffraction. The grown films were determined to be always N-polar. First-principles theoretical calculations modeling the interface structure between GaN(0001) and ZrB(2)(0001) clarify the origin of the N polarity.

Building Pb nanomesas with atomic-layer precision.

We demonstrate a novel scheme for manipulating metallic nanostructures involving a macroscopic number of atoms, yet with precise control in their local structures. The scheme entails a two-step process: (a) a triggering step using a scanning tunneling microscope, followed by (b) self-driven and self-limiting mass-transfer process. By using this scheme, we construct Pb nanomesas on Si(111) substrates whose thickness can be controlled with atomic-layer precision. The kinetic barrier for the mass transfer and the underlying mechanism behind this novel manipulation are determined.

Na adsorption on the Si111-(7 x 7) surface: from two-dimensional gas to nanocluster array.

We have systematically investigated Na adsorption on the Si(111)-(7 x 7) surface at room temperature using scanning tunneling microscopy (STM). Below the critical coverage of 0.08 monolayer, we find intriguing contrast modulation instead of localized Na adsorbates, coupled with streaky noise in the STM images, which is accompanied by monotonic work function drop. Above the critical coverage, Na clusters emerge and form a self-assembled array. Combined with first-principles theoretical simulations, we conclude that the Na atoms on the (7 x 7) surface are, while strongly bound ( approximately 2.2 eV) to the surface, highly mobile in "basins" around the Si rest atoms, forming a two-dimensional gas phase at the initial coverage, and that the cluster at the higher coverage consists of six Na atoms together with three Si adatoms.