Light-emitting diodes with Ge(Si) nanoislands embedded in photonic crystals.

Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.

Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures.

The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 µm with variations of free electron concentration in InN layers from 2·1019 cm-3 to 3·1017 cm-3. The main necessary conditions for achieving the stimulated emission from epitaxial InN layers are defined. In the best quality samples, a threshold excitation power density is obtained to be as low as 400 W/cm2 at T = 8 K and the stimulated emission is observed up to 215 K. In this way, the feasibility of InN-based lasers as well as the potentials of crystalline indium nitride as a promising photonic material are demonstrated.

Features of spectral properties of Sm(3+) complexes with dithia- and diselenophosphinate ligands.

The samarium complexes Sm(S2PPh2)3(THF)2 (1) and Sm(Se2PPh2)3(THF)2 (2) with soft-donor dithia- and diselenophosphinate ligands were synthesized and their photophysical properties were studied in detail. Both complexes displayed the metal-centered photoluminescence (PL) in visible and NIR regions corresponding to (4)G5/2→(6)HJ (J=5/2, 7/2, 9/2, 11/2, 13/2, 15/2), (6)FJ (J=1/2, 3/2, 5/2, 7/2, 9/2, 11/2) f-f transitions of Sm(3+). Luminescence decay curves exhibit an initial short build-up region and can be described by double or triple exponential function owing to multiphonon relaxation from the (4)F3/2 energy level to the (4)G5/2 one and reversible energy transfer from the Sm(3+) excited states to the triplet ((3)T1) state of phosphinate ligand. A Judd-Ofelt analysis was performed to estimate PL quantum efficiency (QE), branching ratios (ß) and induced-emission cross section (σem) of the compounds obtained. It was found that the Judd-Ofelt parameter Ω2 of 1 is significantly greater than that of 2. This feature is responsible for large values of ß (50.98%) and σem (4.29×10(-21)cm(2)) which suggest 1 as a good candidate for the development of samarium doped polymethylmethacrylate (PMMA) laser medium acting on the (4)G5/2→(6)H9/2 transition at 645nm. The estimated room-temperature PL QE of 1 and 2 equals to 1.9 and 0.17%, respectively.