Cathodoluminescence and tip-plasmon resonance of Bi2Te3 triangular nanostructures.

Bi2Te3, as a topological insulator, is able to support plasmonic emission in the visible spectral range. Thin Bi2Te3 flakes can be exfoliated directly from a Bi2Te3 crystal, and the shape of Bi2Te3 flakes can be further modified by focused ion beam milling. Therefore, we have designed a Bi2Te3 triangular antenna with distinct tip angles for the application of plasmonic resonance. The plasmonic emission of the Bi2Te3 triangular antenna is excited and investigated by cathodoluminescence in the scanning electron microscope. Enhanced tip plasmons have been observed from distinct tips with angles of 20º, 36º, 54º, 70º, and 90º, respectively. Due to the confinement of geometric boundaries for oscillating charges, the resonant peak position of tip plasmon with a smaller angle has a blue shift. Moreover, the dependence of plasmonic behavior on the excitation position has been discovered as well. This research provides a unique approach to fabricate Bi2Te3 nanostructures and manipulate the corresponding plasmonic properties.

Probe metal binding mode of imine covalent organic frameworks: cycloiridation for (photo)catalytic hydrogen evolution from formate.

Metalation of covalent organic frameworks (COFs) is a critical strategy to functionalize COFs for advanced applications yet largely relies on the pre-installed specific metal docking sites in the network, such as porphyrin, salen, 2,2'-bipyridine, etc. We show in this study that the imine linkage of simple imine-based COFs, one of the most popular COFs, readily chelate transition metal (Ir in this work) via cyclometalation, which has not been explored before. The iridacycle decorated COF exhibited more than 10-fold efficiency enhancement in (photo)catalytic hydrogen evolution from aqueous formate solution than its molecular counterpart under mild conditions. This work will inspire more functional cyclometallated COFs to be explored beyond catalysis considering the large imine COF library and the rich metallacycle chemistry.

Photoluminescence characterization of wetting layer and carrier dynamics for coupled InGaAs/GaAs surface quantum dot pair structures.

The optical properties are investigated by spectroscopic characterizations for bilayer InGaAs/GaAs quantum dot (QD) structures consisting of a layer of surface quantum dots (SQDs) separated from a layer of buried quantum dots (BQDs) by different GaAs spacers with thicknesses of 7 nm, 10.5 nm and 70 nm. The coupling from the BQDs to SQDs leads to carrier transfer for the two samples with thin spacers, 7 nm and 10.5 nm, in which QD pairs are obtained while not for the 70 nm spacer sample. The carrier tunneling time is measured to be 0.145 ns and 0.275 ns from BQDs to SQD through the 7 nm and 10.5 nm spacers, respectively. A weak emission band can be observed at the wavelength of ∼ 960 nm, while the excitation intensity dependent PL and PLE spectra show that this is from the wetting layer (WL) of the SQDs. This WL is very important for carrier dynamics in bilayer structures of BQDs and SQDs, including for carrier generation, capture, relaxation, tunneling, and recombination. These results provide useful information for understanding the optical properties of InGaAs SQDs and for using such hybrid structures as building blocks for surface sensing devices.

Type-II GaSb quantum dots grown on InAlAs/InP (001) by droplet epitaxy.

GaSb quantum dots (QDs) have been grown by droplet epitaxy within InAlAs barrier layers on an InP (001) substrate. The droplet growth mode facilitates a larger size (average height ∼4.5 nm) and a lower density (∼6.3 × 109 cm-2) for the QDs than would be expected for the 4% lattice mismatch between GaSb and InAlAs. A type-II band alignment between the GaSb QDs and the InAlAs barriers is revealed by photoluminescence (PL) through a prominent blue-shift of ∼0.11 eV resulting from a six orders of magnitude increase in excitation power. Further confirmation of the type-II nature of these QDs is found through time-resolved PL studies showing a biexponential decay with a long carrier lifetime of ∼10.9 ns. These observations reveal new information for understanding the formation and properties of GaSb/InAlAs/InP QDs, which may be an optimum system for the development of both efficient memory cells and photovoltaic devices.

Plasmonic Emission of Bullseye Nanoemitters on Bi2Te3 Nanoflakes.

Topological insulators, such as Bi2Te3, have been confirmed to exhibit plasmon radiation over the entire visible spectral range. Herein, we fabricate bullseye nanoemitters, consisting of a central disk and concentric gratings, on the Bi2Te3 nanoflake. Due to the existence of edge plasmon modes, Bi2Te3 bullseye nanostructures are possible to converge light towards the central disk. Taking advantage of the excellent spatial resolution of cathodoluminescence (CL) characterization, it has been observed that plasmonic behaviors depend on the excitation location. A stronger plasmonic intensity and a wider CL spectral linewidth can be obtained at the edge of the central disk. In order to further improve the focusing ability, a cylindrical Pt nanostructure has been deposited on the central disk. Additionally, the finite element simulation indicates that the electric-field enhancement originates from the coupling process between the plasmonic emission from the Bi2Te3 bullseye and the Pt nanostructure. Finally, we find that enhancement efficiency depends on the thickness of the Pt nanostructure.