Kinase PIM1 governs ferroptosis to reduce retinal microvascular endothelial cell dysfunction triggered by high glucose.

Previous studies have implicated targeting Pim-1 proto-oncogene, serine/threonine kinase (PIM1) as a preventive measure against high glucose-induced cellular stress and apoptosis. This study aimed to reveal the potential role and regulatory mechanism of PIM1 in diabetic retinopathy. Human retinal microvascular endothelial cells (hRMECs) underwent high glucose induction, and fluctuations in PIM1 levels were assessed. By overexpressing PIM1, its effects on the levels of inflammatory factors, oxidative stress indicators, migration and tube formation abilities, tight junction protein expression levels, and ferroptosis in hRMECs were identified. Afterwards, hRMECs were treated with the ferroptosis-inducing agent erastin, and the effect of erastin on the above PIM1 regulatory functions was focused on. PIM1 was downregulated upon high glucose, and its overexpression inhibited the inflammatory response, oxidative stress, cell migration, and tube formation potential in hRMECs, whereas elevated tight junction protein levels. Furthermore, PIM1 overexpression reduced intracellular iron ion levels, lipid peroxidation, and levels of proteins actively involved in ferroptosis. Erastin treatment reversed the impacts of PIM1 on hRMECs, suggesting the mediation of ferroptosis in PIM1 regulation. The current study has yielded critical insights into the role of PIM1 in ameliorating high glucose-induced hRMEC dysfunction through the inhibition of ferroptosis.

Auxetic piezoelectric effect in heterostructures.

Inherent symmetry breaking at the interface has been fundamental to a myriad of physical effects and functionalities, such as efficient spin-charge interconversion, exotic magnetic structures and an emergent bulk photovoltaic effect. It has recently been demonstrated that interface asymmetry can induce sizable piezoelectric effects in heterostructures, even those consisting of centrosymmetric semiconductors, which provides flexibility to develop and optimize electromechanical coupling phenomena. Here, by targeted engineering of the interface symmetry, we achieve piezoelectric phenomena behaving as the electrical analogue of the negative Poisson's ratio. This effect, termed the auxetic piezoelectric effect, exhibits the same sign for the longitudinal (d33) and transverse (d31, d32) piezoelectric coefficients, enabling a simultaneous contraction or expansion in all directions under an external electrical stimulus. The signs of the transverse coefficients can be further tuned via in-plane symmetry anisotropy. The effects exist in a wide range of material systems and exhibit substantial coefficients, indicating potential implications for all-semiconductor actuator, sensor and filter applications.

Giant bulk piezophotovoltaic effect in 3R-MoS2.

Given its innate coupling with wavefunction geometry in solids and its potential to boost the solar energy conversion efficiency, the bulk photovoltaic effect (BPVE) has been of considerable interest in the past decade1-14. Initially discovered and developed in ferroelectric oxide materials2, the BPVE has now been explored in a wide range of emerging materials, such as Weyl semimetals9,10, van der Waals nanomaterials11,12,14, oxide superlattices15, halide perovskites16, organics17, bulk Rashba semiconductors18 and others. However, a feasible experimental approach to optimize the photovoltaic performance is lacking. Here we show that strain-induced polarization can significantly enhance the BPVE in non-centrosymmetric rhombohedral-type MoS2 multilayer flakes (that is, 3R-MoS2). This polarization-enhanced BPVE, termed the piezophotovoltaic effect, exhibits distinctive crystallographic orientation dependence, in that the enhancement mainly manifests in the armchair direction of the 3R-MoS2 lattice while remaining largely intact in the zigzag direction. Moreover, the photocurrent increases by over two orders of magnitude when an in-plane tensile strain of ~0.2% is applied, rivalling that of state-of-the-art materials. This work unravels the potential of strain engineering in boosting the photovoltaic performance, which could potentially promote the exploration of novel photoelectric processes in strained two-dimensional layered materials and their van der Waals heterostructures.

Emerging Opportunities for 2D Semiconductor/Ferroelectric Transistor-Structure Devices.

Semiconductor technology, which is rapidly evolving, is poised to enter a new era for which revolutionary innovations are needed to address fundamental limitations on material and working principle level. 2D semiconductors inherently holding novel properties at the atomic limit show great promise to tackle challenges imposed by traditional bulk semiconductor materials. Synergistic combination of 2D semiconductors with functional ferroelectrics further offers new working principles, and is expected to deliver massively enhanced device performance for existing complementary metal-oxide-semiconductor (CMOS) technologies and add unprecedented applications for next-generation electronics. Herein, recent demonstrations of novel device concepts based on 2D semiconductor/ferroelectric heterostructures are critically reviewed covering their working mechanisms, device construction, applications, and challenges. In particular, emerging opportunities of CMOS-process-compatible 2D semiconductor/ferroelectric transistor structure devices for the development of a rich variety of applications are discussed, including beyond-Boltzmann transistors, nonvolatile memories, neuromorphic devices, and reconfigurable nanodevices such as p-n homojunctions and self-powered photodetectors. It is concluded that 2D semiconductor/ferroelectric heterostructures, as an emergent heterogeneous platform, could drive many more exciting innovations for modern electronics, beyond the capability of ubiquitous silicon systems.

Photovoltaic and flexible deep ultraviolet wavelength detector based on novel ß-Ga2O3/muscovite heteroepitaxy.

Flexible and self-powered deep ultraviolet (UV) photodetectors are pivotal for next-generation electronic skins to enrich human life quality. The fabrication of epitaxial ß-Ga2O3 thin films is challenging on flexible substrates due to high-temperature growth requirements. Herein, ß-Ga2O3 ([Formula: see text] 0 1) films are hetero-epitaxially grown on ultra-thin and environment-friendly muscovite mica which is the first time ß-Ga2O3 epitaxy growth on any flexible substrate. Integration of Gallium oxide with muscovite enables high-temperature processing as well as excellent flexibility compared to polymer substrates. Additionally, the metal-semiconductor-metal (MSM) photodetector on ß-Ga2O3 layer shows an ultra-low dark current of 800 fA at zero bias. The photovoltaic peak responsivity of 11.6 µA/W is obtained corresponding to very weak illumination of 75 µW/cm2 of 265 nm wavelength. Thermally stimulated current (TSC) measurements are employed to investigate the optically active trap states. Among these traps, trap with an activation energy of 166 meV dominates the persistence photocurrent in the devices. Finally, photovoltaic detectors have shown excellent photocurrent stability under bending induced stress up to 0.32%. Hence, this novel heteroepitaxy opens the new way for flexible deep UV photodetectors.

Piezoelectric and pyroelectric effects induced by interface polar symmetry.

Interfaces in heterostructures have been a key point of interest in condensed-matter physics for decades owing to a plethora of distinctive phenomena-such as rectification1, the photovoltaic effect2, the quantum Hall effect3 and high-temperature superconductivity4-and their critical roles in present-day technical devices. However, the symmetry modulation at interfaces and the resultant effects have been largely overlooked. Here we show that a built-in electric field that originates from band bending at heterostructure interfaces induces polar symmetry therein that results in emergent functionalities, including piezoelectricity and pyroelectricity, even though the component materials are centrosymmetric. We study classic interfaces-namely, Schottky junctions-formed by noble metal and centrosymmetric semiconductors, including niobium-doped strontium titanium oxide crystals, niobium-doped titanium dioxide crystals, niobium-doped barium strontium titanium oxide ceramics, and silicon. The built-in electric field in the depletion region induces polar structures in the semiconductors and generates substantial piezoelectric and pyroelectric effects. In particular, the pyroelectric coefficient and figure of merit of the interface are over one order of magnitude larger than those of conventional bulk polar materials. Our study enriches the functionalities of heterostructure interfaces, offering a distinctive approach to realizing energy transduction beyond the conventional limitation imposed by intrinsic symmetry.

Artificial Optoelectronic Synapses Based on Ferroelectric Field-Effect Enabled 2D Transition Metal Dichalcogenide Memristive Transistors.

Neuromorphic visual sensory and memory systems, which can perceive, process, and memorize optical information, represent core technology for artificial intelligence and robotics with autonomous navigation. An optoelectronic synapse with an elegant integration of biometric optical sensing and synaptic learning functions can be a fundamental element for the hardware-implementation of such systems. Here, we report a class of ferroelectric field-effect memristive transistors made of a two-dimensional WS2 semiconductor atop a ferroelectric PbZr0.2Ti0.8O3 (PZT) thin film for optoelectronic synaptic devices. The WS2 channel exhibits voltage- and light-controllable memristive switching, dependent on the optically and electrically tunable ferroelectric domain patterns in the underlying PZT layer. These devices consequently show the emulation of optically driven synaptic functionalities including both short- and long-term plasticity as well as the implementation of brainlike learning rules. Integration of these rich synaptic functionalities into one single artificial optoelectronic device could allow the development of future neuromorphic electronics capable of optical information sensing and learning.

Strain-gradient mediated local conduction in strained bismuth ferrite films.

It has been recently shown that the strain gradient is able to separate the light-excited electron-hole pairs in semiconductors, but how it affects the photoelectric properties of the photo-active materials remains an open question. Here, we demonstrate the critical role of the strain gradient in mediating local photoelectric properties in the strained BiFeO3 thin films by systematically characterizing the local conduction with nanometre lateral resolution in both dark and illuminated conditions. Due to the giant strain gradient manifested at the morphotropic phase boundaries, the associated flexo-photovoltaic effect induces on one side an enhanced photoconduction in the R-phase, and on the other side a negative photoconductivity in the morphotropic [Formula: see text]-phase. This work offers insight and implication of the strain gradient on the electronic properties in both optoelectronic and photovoltaic devices.

Light-Controlled Nanoscopic Writing of Electronic Memories Using the Tip-Enhanced Bulk Photovoltaic Effect.

The light control of nonvolatile nanoscale memories could represent a fundamental step toward novel optoelectronic devices with memory and logic functionalities. However, most of the proposed devices exhibit insufficient control in terms of the reversibility, data retention, photosensitivity, limited-photoactive area, and so forth. Here, in a proof-of-concept work, we demonstrate the use of the tip-enhanced bulk photovoltaic (BPV) effect to realize programmable nanoscopic writing of nonphotoactive electronic devices by light control. We show that electronic properties of solid-state memory devices can be reversibly and location-precisely manipulated in the nanoscale using the BPV effect in combination with the nanoscale contact connection, that is, atomic force microscopy (AFM) probe technique in this work. More than 105% reversible switching of tunneling electroresistance of ferroelectric tunnel junctions is exclusively achieved by light control. Using the same light-controlled AFM probe technique, we also present precise nanoscopic and multiple-state writing of LaAlO3/SrTiO3 two-dimensional electron gas (2DEG)-based field-effect transistors. The tip-enhanced BPV effect can offer a novel avenue for reversible and multistate light control of a wide range of electronic memory devices in the nanoscale and may lead to more sophisticated functionalities in optoelectronic applications.

Ferroelastic domain identification in BiFeO3 crystals using Raman spectroscopy.

Multiferroic BiFeO3 crystals were investigated by means of micro-Raman spectroscopy using the laser wavelengths of 442 nm (resonant conditions) and 633 nm (non-resonant conditions). The azimuthal angle dependence of the intensity of the Raman modes allowed their symmetry assignment. The experimental data are consistent with a simulation based on Raman tensor formalism. Mixed symmetries were taken into account, considering the orientation of the crystal optic axis along a pseudo-cubic <111> direction. The strong anisotropic intensity variation of some of the polar Raman modes was used for line scans and mappings in order to identify ferroelastic domain patterns. The line scans performed with different excitation wavelengths and hence different information depths indicate a tilt of the domain walls with respect to the sample surface. The domain distribution found by Raman spectroscopy is in very good agreement with the finding of electron back scattering diffraction.

Design for Highly Piezoelectric and Visible/Near-Infrared Photoresponsive Perovskite Oxides.

Defect-engineered perovskite oxides that exhibit ferroelectric and photovoltaic properties are promising multifunctional materials. Though introducing gap states by transition metal doping on the perovskite B-site can obtain low bandgap (i.e., 1.1-3.8 eV), the electrically leaky perovskite oxides generally lose piezoelectricity mainly due to oxygen vacancies. Therefore, the development of highly piezoelectric ferroelectric semiconductor remains challenging. Here, inspired by point-defect-mediated large piezoelectricity in ferroelectrics especially at the morphotropic phase boundary (MPB) region, an efficient strategy is proposed by judiciously introducing the gap states at the MPB where defect-induced local polar heterogeneities are thermodynamically coupled with the host polarization to simultaneously achieve high piezoelectricity and low bandgap. A concrete example, Ni2+ -mediated (1-x)Na0.5 Bi0.5 TiO3 -xBa(Ti0.5 Ni0.5 )O3-δ (x = 0.02-0.08) composition is presented, which can show excellent piezoelectricity and unprecedented visible/near-infrared light absorption with a lowest ever bandgap ≈0.9 eV at room temperature. In particular, the MPB composition x = 0.05 shows the best ferroelectricity/piezoelectricity (d33 = 151 pC N-1 , Pr = 31.2 µC cm-2 ) and a largely enhanced photocurrent density approximately two orders of magnitude higher compared with classic ferroelectric (Pb,La)(Zr,Ti)O3 . This research provides a new paradigm for designing highly piezoelectric and visible/near-infrared photoresponsive perovskite oxides for solar energy conversion, near-infrared detection, and other multifunctional applications.

Flexo-photovoltaic effect.

It is highly desirable to discover photovoltaic mechanisms that enable enhanced efficiency of solar cells. Here we report that the bulk photovoltaic effect, which is free from the thermodynamic Shockley-Queisser limit but usually manifested only in noncentrosymmetric (piezoelectric or ferroelectric) materials, can be realized in any semiconductor, including silicon, by mediation of flexoelectric effect. We used either an atomic force microscope or a micrometer-scale indentation system to introduce strain gradients, thus creating very large photovoltaic currents from centrosymmetric single crystals of strontium titanate, titanium dioxide, and silicon. This strain gradient-induced bulk photovoltaic effect, which we call the flexo-photovoltaic effect, functions in the absence of a p-n junction. This finding may extend present solar cell technologies by boosting the solar energy conversion efficiency from a wide pool of established semiconductors.

Light-Induced Reversible Control of Ferroelectric Polarization in BiFeO3.

Manipulation of ferroic order parameters, namely (anti-)ferromagnetic, ferroelectric, and ferroelastic, by light at room temperature is a fascinating topic in modern solid-state physics due to potential cross-fertilization in research fields that are largely decoupled. Here, full optical control, that is, reversible switching, of the ferroelectric/ferroelastic domains in BiFeO3 thin films at room temperature by the mediation of the tip-enhanced photovoltaic effect is demonstrated. The enhanced short-circuit photocurrent density at the tip contact area generates a local electric field well exceeding the coercive field, enabling ferroelectric polarization switching. Interestingly, by tailoring the photocurrent direction, via either tuning the illumination geometry or simply rotating the light polarization, full control of the ferroelectric polarization is achieved. The finding offers a new insight into the interactions between light and ferroic orders, enabling fully optical control of all the ferroic orders at room temperature and providing guidance to design novel optoferroic devices for data storage and sensing.

Enhancement of Local Photovoltaic Current at Ferroelectric Domain Walls in BiFeO3.

Domain walls, which are intrinsically two dimensional nano-objects exhibiting nontrivial electronic and magnetic behaviours, have been proven to play a crucial role in photovoltaic properties of ferroelectrics. Despite this recognition, the electronic properties of domain walls under illumination until now have been accessible only to macroscopic studies and their effects upon the conduction of photovoltaic current still remain elusive. The lack of understanding hinders the developing of nanoscale devices based on ferroelectric domain walls. Here, we directly characterize the local photovoltaic and photoconductive properties of 71° domain walls on BiFeO3 thin films with a nanoscale resolution. Local photovoltaic current, proven to be driven by the bulk photovoltaic effect, has been probed over the whole illuminated surface by using a specially designed photoelectric atomic force microscopy and found to be significantly enhanced at domain walls. Additionally, spatially resolved photoconductive current distribution reveals a higher density of excited carriers at domain walls in comparison with domains. Our measurements demonstrate that domain wall enhanced photovoltaic current originates from its high conduction rather than the internal electric field. This photoconduction facilitated local photovoltaic current is likely to be a universal property of topological defects in ferroelectric semiconductors.

Use of cloud point extraction with derivatizing reagent for the extraction and determination of isoniazid.

A simple and sensitive cloud point extraction high-performance liquid chromatography method is proposed for the determination of isoniazid in blood. The procedure is based on the product of the reaction of isoniazid with benzaldehyde. It can be validated that there is a linear relationship between the signal of isonicotinyl hydrazone and the concentration of isoniazid. A cloud point extraction system of nonionic surfactant Triton X-100 is applied for preconcentration of isonicotinyl hydrazone. Then the analytes in surfactant-rich phase are detected with HPLC-UV system. calibration graph was obtained in the range of 2.0 × 10(-3)-0.5 mg/L, the detection limit was 5.0 × 10(-4) mg/L. Method validation is performed on serum samples spiked at two levels, the recoveries ranging from 82.17-83.81%, with relative standard deviations from 2.45% to 3.89%.

Cloud point extraction coupled with ultrasonic-assisted back-extraction for the determination of organophosphorus pesticides in concentrated fruit juice by gas chromatography with flame photometric detection.

A new method for the determination of nine organophosphorus pesticides (OPPs): Dichlorvos, methamidophos, acephate, diazinon, dimethoate, chlorpyrifos, parathion-methyl, malathion and parathion-ethyl in concentrated fruit juice was developed using the cloud point extraction coupled with ultrasonic-assisted back-extraction prior to gas chromatography with flame photometric detection (GC-FPD) analysis. The parameters and variables that affect the extraction were investigated. Under optimum conditions: a solution containing 6% (W/V) polyethylene glycol 6000 (PEG 6000) and 20% (W/V) Na(2)SO(4) for the extraction of the OPPs. The coacervation phase obtained was back extracted with ethyl acetate. The upper ethyl acetate solution was centrifugated simply for further cleanup for the sake of automatic injection. A preconcentration factor of 50 was obtained for these nine pesticides. Using this method, the limits of detection (LOD) and limits of quantification (LOQ) were in the range of 0.5-3.0 and 1.5-9.0µgkg(-1) in concentrated fruit juice, respectively; the relative standard deviations (RSD) were <9%.

Determination of four carbamate pesticides in corn by cloud point extraction and high-performance liquid chromatography in the visible region based on their derivatization reaction.

A highly sensitive method for the determination of arprocarb (AC), carbofuran (CF), isoprocarb (IC), and fenobucarb (FC) is proposed. The method is based on alkaline hydrolysis of the four carbamate pesticides, and the resultant hydrolysis products are reacted with 4-aminoantipyrene (AP) to give four red color products. The colored compounds are enriched and separated by cloud point extraction (CPE) method, and the coacervate phase containing the compounds is determined with a high-performance liquid chromatography (HPLC) system in the visible region. AC, CF, IC, and FC were determined on the basis of a linear correlation between the signals of the colored compounds and the concentrations of the pesticides. The method is applied to determine the four pesticides in corn samples; the limits of detection are 2.0 x 10(-4) mg L(-1) for AC, CF, and IC and 5.0 x 10(-4) mg L(-1) for FC, with recoveries ranging between 84.8 and 93.0%, at spiking levels of 5 x 10(-3), 2 x 10(-2), and 0.2 mg kg(-1), respectively.

Study of cloud point extraction and high-performance liquid chromatographic determination of isoniazid based on the formation of isonicotinylhydrazone.

Isoniazid (INH) reacted with p-dimethylaminobenzaldehyde (DABD) in the presence of trichloroacetic acid to give isonicotinylhydrazone (INZ) having lambda(max) 365nm. Cloud point extraction (CPE) is carried out to extract INH and IHZ in aqueous solutions using surfactant poly(ethylene glycol) 4000 (PEG4000), respectively. Langmuir model is used to study the adsorption behaviors of the two solutes on micelles of PEG4000. A linear correlation is found between variation of PEG4000 concentration required for feed concentration of the two solutes and used to predict PEG4000 concentration required for extracting INH and IHZ in CPE procedure. The results calculated show that, for a desired recovery level of 90%, only can IHZ be sufficiently extracted by PEG4000. In this experiment, the feed concentration of PEG4000 is defined by above-mentioned correlation, and the effects of other operating parameters, e.g., concentration of salt, pH and centrifugation time on extraction of PEG4000-IHZ system have also been studied in detail. The proposed CPE method coupled with HPLC-UV system is successfully used for the determination of INH in urine sample.