Growth of Graphitic Carbon Nitride-Incorporated ZnO Nanorods on Silicon Pyramidal Substrates for Enhanced Hydrogen Sensing Applications.

Monitoring the hydrogen gas (H2) level is highly important in a wide range of applications. Oxide-carbon hybrids have emerged as a promising material for the fabrication of gas sensors for this purpose. Here, for the first time, graphitic carbon nitride (g-C3N4)-doped zinc oxide nanorods (ZNRs) have been grown on silicon (Si) pyramid-shaped surfaces by the facile hydrothermal reaction method. The systematic material analyses have revealed that the g-C3N4 nanostructures (NS) have been consistently incorporated into the ZNRs on the pyramidal silicon (Py-Si) surface (g-C3N4-ZNRs/Py-Si). The combined properties of the present structure exhibit an excellent sensitivity (∼53%) under H2 gas exposure, better than that of bare ZNRs (12%). The results revealed that the fine incorporation of g-C3N4 into ZNRs on the Py-Si surface improves the H2 gas sensing properties when compared to that of the planar silicon (Pl-Si) surface. The doping of g-C3N4 into ZNRs increases the electrical conductivity through its graphene-like edges (due to the formation of delocalized bonds in g-C3N4 during carbon self-doping), as revealed by FESEM images. In addition, the presence of defects in g-C3N4 induces the gas adsorption properties of ZnO through its active sites. Moreover, the integration of the 1D structure (g-C3N4-ZNRs) into a 3D pyramidal structure opens up new opportunities for low-cost H2 gas sensing at room temperature. It is an easy way to enhance the gas sensing properties of ZNRs at room temperature, which is desirable for practical H2 sensor applications.

Superficial Edge Effect of N2-Doped Nanodiamond on the Highly Stable Nonenzymatic Glucose Detection Properties of Dispersed Graphene Flakes/Ni Nanostructures.

In this study, we report nitrogen-doped nanodiamond (ND)-integrated crushed graphene (Gr) nanoflakes on nickel hydroxide (Ni(OH)2, named NH) nanostructures for highly stable nonenzymatic glucose sensors. A chemical vapor deposition route with a simple hydrothermal method was devised in the fabrication of ND-Gr-NH nanostructures. Thus, the results depict that the best sensitivity of 13769 µA mM-1 cm-2 was detected for Gr-NH, while NH shows 10,358 µA mM-1 cm-2. The salient improvement in the sensitivity of ND-Gr-NH is 15,431.2 µA mM-1 cm-2, with a limit of detection of 0.1 µm. The enhancement in ND-integrated Gr-NH is due to the synergistic influence of ND and graphene on NH. Furthermore, the ND-Gr-NH electrode shows a good stability (95%), while Gr-NH exhibits a stability of 82% over 21 days. In addition, the present ND-based electrode shows high selectivity toward glucose among additional interfering compounds including sodium chloride (NaCl), uric acid, and ascorbic acid. These outstanding enzymeless glucose sensing results could be ascribed to the synergistic influence that provides more active sites and further enhances the electron-transfer reaction.

Impact of Electrode Surface Morphology in ZnO-Based Resistive Random Access Memory Fabricated Using the Cu Chemical Displacement Technique.

Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM devices. Compared with conventional deposition methods, the Cu-CDT method has numerous advantages for ReRAM fabrication, including low cost, low temperature fabrication, and the provision of unconsolidated Cu film and large surface roughness. Moreover, the Cu-CDT method is a favorable candidate for overcoming the Cu etching problem and is thus suitable for fabricating ReRAM devices. Using this technique, the surface morphology of a thin Cu film can be easily controlled. The obtained results show that the electric fields during the Forming and SET operations decreased, and the on-state current increased in the RESET operation, as the Cu-CDT displacement time was increased. The Cu-CDT samples exhibited a low operation field, large memory window (>106), and excellent endurance switching cycle characteristics. Moreover, this paper proposes a model to explain the electrical characteristics of ReRAM, which are dependent on the surface morphology.

Interfacial Effect of Oxygen-Doped Nanodiamond on CuO and Micropyramidal Silicon Heterostructures for Efficient Nonenzymatic Glucose Sensor.

Herein, the novel strategy of copper oxide (CuO) deposited oxygen-doped nitrogen incorporated nanodiamond (NOND)/Si pyramids (Pyr-Si) heterostructure is studied for high-performance nonenzymatic glucose sensor. The combined properties of surface-modified NOND/Pyr-Si induced by different growth durations (5 to 20 min) of CuO is envisioned to improve glucose sensitivity and stability. For comparison, the same methods and parameters were deposited on the plane silicon wafers. The systematic analysis reveals the best glucose sensing properties of 15 min grown CuO/NOND/Pyr-Si based sensor, with a high sensitivity of 1993 µA mM-1 cm-2, a lower limit of detection of 0.1 µm, and a longer stability of 28 d (∼96%). In addition, the present sensor exhibits good selectivity of glucose among other analytes such as sodium chloride, ascorbic acid, uric acid, and so on. The enhancement in glucose sensing performances of the as-fabricated CuO/NOND/Pyr-Si is ascribed to the interfacial effect of NOND and the synergistic effect of CuO and NOND/Pyr-Si. Moreover, the oxygen dopant in NOND and CuO stimulates the reactive oxygen species while measuring glucose and affords rapid recovery (<2 s). This promotes fast electron kinetics in the electrocatalytic solutions, which enhances the electroactive area and thereby contributes to a high sensitivity. These salient results suggested that the as-fabricated CuO/NOND/Pyr-Si sensor is more suitable for high-performance biosensors and effective energy storage device applications.

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

Efficiency improvement of silicon nanostructure-based solar cells.

Solar cells based on a high-efficiency silicon nanostructure (SNS) were developed using a two-step metal-assisted electroless etching (MAEE) technique, phosphorus silicate glass (PSG) doping and screen printing. This process was used to produce solar cells with a silver nitrate (AgNO3) etching solution in different concentrations. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two-step MAEE technique showed an increase in silicon surface coverage of ~181.1% and a decrease in reflectivity of ~144.3%. The performance of the SNS-based solar cells was found to be optimized (~11.86%) in an SNS with a length of ~300 nm, an aspect ratio of ~5, surface coverage of ~84.9% and a reflectivity of ~6.1%. The ~16.8% increase in power conversion efficiency (PCE) for the SNS-based solar cell indicates good potential for mass production.

A hot hole-programmed and low-temperature-formed SONOS flash memory.

In this study, a high-performance TixZrySizO flash memory is demonstrated using a sol-gel spin-coating method and formed under a low annealing temperature. The high-efficiency charge storage layer is formed by depositing a well-mixed solution of titanium tetrachloride, silicon tetrachloride, and zirconium tetrachloride, followed by 60 s of annealing at 600°C. The flash memory exhibits a noteworthy hot hole trapping characteristic and excellent electrical properties regarding memory window, program/erase speeds, and charge retention. At only 6-V operation, the program/erase speeds can be as fast as 120:5.2 µs with a 2-V shift, and the memory window can be up to 8 V. The retention times are extrapolated to 106 s with only 5% (at 85°C) and 10% (at 125°C) charge loss. The barrier height of the TixZrySizO film is demonstrated to be 1.15 eV for hole trapping, through the extraction of the Poole-Frenkel current. The excellent performance of the memory is attributed to high trapping sites of the low-temperature-annealed, high-κ sol-gel film.