Zinc vacancy modulated quaternary metallic oxynitride GeZn1.7ON1.8: as a high-performance anode for lithium-ion storage.

The development of alternative anode materials to achieve high lithium-ion storage performance is crucial for the next-generation lithium-ion batteries (LIBs). In this study, a new anode material, Zn-defected GeZn1.7ON1.8 (GeZn1.7-x ON1.8), was rationally designed and successfully synthesized by a simple ammoniation and acid etching method. The introduced zinc vacancy can increase the capacity by more than 100%, originating from the additional space for the lithium-ion insertion. This GeZn1.7-x ON1.8 particle anode delivers a high capacity (868 mA h g-1 at 0.1 A g-1 after 200 cycles) and ultralong cyclic stability (2000 cycles at 1.0 A g-1 with a maintained capacity of 458.6 mA h g-1). Electrochemical kinetic analysis corroborates the enhanced pseudocapacitive contribution and lithium-ion reaction kinetics in the GeZn1.7-x ON1.8 particle anode. Furthermore, X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses at different electrochemical reaction states confirm the reversible intercalation lithium-ion storage mechanism of this GeZn1.7-x ON1.8 particle anode. This study offers a new vision toward designing high-performance quaternary metallic oxynitride-based materials for large-scale energy storage applications.

The resistive switching memory of CoFe2O4 thin film using nanoporous alumina template.

A novel conductive process for resistive random access memory cells is investigated based on nanoporous anodized aluminum oxide template. Bipolar resistive switching characteristic is clearly observed in CoFe2O4 thin film. Stable and repeatable resistive switching behavior is acquired at the same time. On the basis of conductive filament model, possible generation mechanisms for the resistive switching behaviors are discussed intensively. Besides, the magnetic properties of samples (before and after the annealing process) are characterized, and the distinct changes of magnetic anisotropy and coercive field are detected. The present results provide a new perspective to comprehend the underlying physical origin of the resistive switching effect. PACS: 68.37.-d; 73.40.Rw; 73.61.-r.

(E)-4-Bromo-N-{(E)-3-[(4-bromo-2-methyl-phen-yl)imino]-butan-2-yl-idene}-2-methyl-aniline.

The title compound, C(18)H(18)Br(2)N(2), is centrosymmetric with the mid-point of the central C-C bond of the butyl group located on an inversion center. The terminal benzene ring is approximately perpendicular to the central butyl plane [dihedral angle = 71.9 (8)°]. No hydrogen bonding or aromatic stacking is observed in the crystal.