Extended carrier lifetimes and diffusion in hybrid perovskites revealed by Hall effect and photoconductivity measurements.

Impressive performance of hybrid perovskite solar cells reported in recent years still awaits a comprehensive understanding of its microscopic origins. In this work, the intrinsic Hall mobility and photocarrier recombination coefficient are directly measured in these materials in steady-state transport studies. The results show that electron-hole recombination and carrier trapping rates in hybrid perovskites are very low. The bimolecular recombination coefficient (10(-11) to 10(-10) cm(3) s(-1)) is found to be on par with that in the best direct-band inorganic semiconductors, even though the intrinsic Hall mobility in hybrid perovskites is considerably lower (up to 60 cm(2) V(-1) s(-1)). Measured here, steady-state carrier lifetimes (of up to 3 ms) and diffusion lengths (as long as 650 µm) are significantly longer than those in high-purity crystalline inorganic semiconductors. We suggest that these experimental findings are consistent with the polaronic nature of charge carriers, resulting from an interaction of charges with methylammonium dipoles.

Charge carrier coherence and Hall effect in organic semiconductors.

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Manifestation of magnetic quantum fluctuations in the dielectric properties of a multiferroic.

Insulating magnets can display novel signatures of quantum fluctuations as similar to the case of metallic magnets. However, their weak spin-lattice coupling has made such observations challenging. Here we find that antiferromagnetic (AF) quantum fluctuations manifest in the dielectric properties of multiferroic Ba2CoGe2O7, where a ferroelectric polarization develops concomitant to an AF ordering. Upon application of a magnetic field (H), dielectric constant shows a characteristic power-law dependence near absolute zero temperature and close to the critical field Hc=37.1 T due to enhanced AF quantum fluctuations. When H>Hc, the dielectric constant shows the temperature-dependent anomalies that reflect a crossover from a field-tuned quantum critical to a gapped spin-polarized state. We uncover theoretically that a linear relation between AF susceptibility and dielectric constant stems from the generic magnetoelectric coupling and directly explains the experimental findings, opening a new pathway for studying quantum criticality in condensed matter.

Left circumflex coronary-to-pulmonary artery fistula as the exclusive collateral to the occluded left anterior descending artery.

A 64 year-old male presented with a five month history of effort angina. Non-invasive studies demonstrated preserved left ventricular function and a modest stress-induced myocardial perfusion defect at the anterior wall. Coronary angiography revealed occlusion of the proximal left anterior descending coronary artery with its distal segment well supplied by collaterals branching from a left circumflex-to-main pulmonary artery fistula. The occluded left anterior descending coronary artery was recanalised by percutaneous interventions, the collaterals vanished immediately, and the patient lived free of symptoms for the following five months.

Trap healing and ultralow-noise Hall effect at the surface of organic semiconductors.

Fundamental studies of intrinsic charge transport properties of organic semiconductors are often hindered by charge traps associated with static disorder present even in optimized single-crystal devices. Here, we report a method of surface functionalization using an inert non-conjugated polymer, perfluoropolyether (PFPE), deposited at the surface of organic molecular crystals, which results in accumulation of mobile holes and a 'trap healing' effect at the crystal/PFPE interface. As a consequence, a remarkable ultralow-noise, trp-free conduction regime characterized by intrinsic mobility and transport anisotropy emerges in organic single crystals, and Hall effect measurements with an unprecedented signal-to-noise ratio are demonstrated. This general method to convert trap-dominated organic semiconductors to intrinsic systems may enable the determination of intrinsic transport parameters with high accuracy and make Hall effect measurements in molecular crystals ubiquitous.

Dynamic character of charge transport parameters in disordered organic semiconductor field-effect transistors.

In this perspective article, we discuss the dynamic instability of charge carrier transport in a range of popular organic semiconductors. We observe that in many cases field-effect mobility, an important parameter used to characterize the performance of organic field-effect transistors (OFETs), strongly depends on the rate of the gate voltage sweep during the measurement. Some molecular systems are so dynamic that their nominal mobility can vary by more than one order of magnitude, depending on how fast the measurements are performed, making an assignment of a single mobility value to devices meaningless. It appears that dispersive transport in OFETs based on disordered semiconductors, those with a high density of localized trap states distributed over a wide energy range, is responsible for the gate voltage sweep rate dependence of nominal mobility. We compare such rate dependence in different materials and across different device architectures, including pristine and trap-dominated single-crystal OFETs, as well as solution-processed polycrystalline thin-film OFETs. The paramount significance given to a single mobility value in the organic electronics community and the practical importance of OFETs for applications thus suggest that such an issue, previously either overlooked or ignored, is in fact a very important point to consider when engaging in fundamental studies of charge carrier mobility in organic semiconductors or designing applied circuits with organic semiconductors.

Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation.

Giant effect of uniaxial pressure on magnetic domain populations in multiferroic bismuth ferrite.

Neutron diffraction is used to show that small (∼7 MPa, or 70 bar) uniaxial pressure produces significant changes in the populations of magnetic domains in a single crystal of 2% Nd-doped bismuth ferrite. The magnetic easy plane of the domains converted by the pressure is rotated 60° relative to its original position. These results demonstrate extreme sensitivity of the magnetic properties of multiferroic bismuth ferrite to tiny (less than 10(-4)) elastic strain, as well as weakness of the forces pinning the domain walls between the cycloidal magnetic domains in this material.

Insulating interlocked ferroelectric and structural antiphase domain walls in multiferroic YMnO3.

Hexagonal YMnO(3) shows a unique improper ferroelectricity induced by structural trimerization. Extensive research on this system is primarily due to its candidacy for ferroelectric memory as well as the intriguing coexistence of ferroelectricity and magnetism. Despite this research, the true ferroelectric domain structure and its relationship with structural domains have never been revealed. Using transmission electron microscopy and conductive atomic force microscopy, we observed an intriguing conductive 'cloverleaf' pattern of six domains emerging from one point--all distinctly characterized by polarization orientation and structural antiphase relationships. In addition, we discovered that the ferroelectric domain walls and structural antiphase boundaries are mutually locked and this strong locking results in incomplete poling even when large electric fields are applied. Furthermore, the locked walls are found to be insulating, which seems consistent with the surprising result that the ferroelectric state is more conducting than the paraelectric state. These fascinating results reveal the rich physics of the hexagonal system with a truly semiconducting bandgap where structural trimerization, ferroelectricity, magnetism and charge conduction are intricately coupled.

Order by static disorder in the Ising chain magnet Ca3Co2-xMnxO6.

Ising chain compound Ca3Co2-xMnxO6 exhibits up-up-down-down long-range magnetic order (LRO) in a broad range of 0.75

Formation of pancakelike Ising domains and giant magnetic coercivity in ferrimagnetic LuFe2O4.

We have studied quasi-two-dimensional multiferroic LuFe2O4 with strong charge-spin-lattice coupling, in which low-temperature coercivity approaches an extraordinary value of 9 T in single crystals. The enhancement of the coercivity is connected to the collective freezing of nanoscale pancakelike ferrimagnetic domains with large uniaxial magnetic anisotropy ("Ising pancakes"). Our results suggest that collective freezing in low-dimensional magnets with large uniaxial anisotropy provides an effective mechanism to achieve enhanced coercivity. This observation may help identify novel approaches for synthesis of magnets with enhanced properties.

Ferroelectricity in an ising chain magnet.

We report discovery of collinear-magnetism-driven ferroelectricity in the Ising chain magnet Ca3Co2-xMn(x)O6 (x approximately 0.96). Neutron diffraction shows that Co2+ and Mn4+ ions alternating along the chains exhibit an up-up-down-down ( upward arrow upward arrow downward arrow downward arrow) magnetic order. The ferroelectricity results from the inversion symmetry breaking in the upward arrow upward arrow downward arrow downward arrow spin chain with an alternating charge order. Unlike in spiral magnetoelectrics where antisymmetric exchange coupling is active, the symmetry breaking in Ca3(Co,Mn)2O6 occurs through exchange striction associated with symmetric superexchange.