Thermodynamics, Adhesion, and Wetting at Li/Cu(-Oxide) Interfaces: Relevance for Anode-Free Lithium-Metal Batteries.

A rechargeable battery that employs a Li metal anode requires that Li be plated in a uniform fashion during charging. In "anode-free" configurations, this plating will occur on the surface of the Cu current collector (CC) during the initial cycle and in any subsequent cycle where the capacity of the cell is fully accessed. Experimental measurements have shown that the plating of Li on Cu can be inhomogeneous, which can lower the efficiency of plating and foster the formation of Li dendrites. The present study employs a combination of first-principles calculations and sessile drop experiments to characterize the thermodynamics and adhesive (i.e., wetting) properties of interfaces involving Li and other phases present on or near the CC. Interfaces between Li and Cu, Cu2O, and Li2O are considered. The calculations predict that both Cu and Cu2O surfaces are lithiophilic. However, sessile drop measurements reveal that Li wetting occurs readily only on pristine Cu. This apparent discrepancy is explained by the occurrence of a spontaneous conversion reaction, 2 Li + Cu2O → Li2O + 2 Cu, that generates Li2O as one of its products. Calculations and sessile drop measurements show that Li does not wet (newly formed) Li2O. Hence, Li that is deposited on a Cu CC where surface oxide species are present will encounter a compositionally heterogeneous substrate comprising lithiophillic (Cu) and lithiophobic (Li2O) regions. These initial heterogeneities have the potential to influence the longer-term behavior of the anode under cycling. In sum, the present study provides insights into the early stage processes associated with Li plating in anode-free batteries and describes mechanisms that contribute to inefficiencies in their operation.

Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS2 device arrays.

Along with the increasing interest in MoS2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS2 device arrays is an imperative task to speed up the design and commercialize various functional MoS2-based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS2 structures. Second, they should be able to produce MoS2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS2 growth, and (ii) site-selective growth of MoS2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS2 features, whereas the processes using graphene ink droplets mainly produce out-of-plane MoS2 features rich in exposed edges. Using out-of-plane MoS2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.

Nanoimprint-Assisted Shear Exfoliation (NASE) for Producing Multilayer MoS2 Structures as Field-Effect Transistor Channel Arrays.

MoS2 and other semiconducting transition metal dichalcogenides (TMDCs) are of great interest due to their excellent physical properties and versatile chemistry. Although many recent research efforts have been directed to explore attractive properties associated with MoS2 monolayers, multilayer/few-layer MoS2 structures are indeed demanded by many practical scale-up device applications, because multilayer structures can provide sizable electronic/photonic state densities for driving upscalable electrical/optical signals. Currently there is a lack of processes capable of producing ordered, pristine multilayer structures of MoS2 (or other relevant TMDCs) with manufacturing-grade uniformity of thicknesses and electronic/photonic properties. In this article, we present a nanoimprint-based approach toward addressing this challenge. In this approach, termed as nanoimprint-assisted shear exfoliation (NASE), a prepatterned bulk MoS2 stamp is pressed into a polymeric fixing layer, and the imprinted MoS2 features are exfoliated along a shear direction. This shear exfoliation can significantly enhance the exfoliation efficiency and thickness uniformity of exfoliated flakes in comparison with previously reported exfoliation processes. Furthermore, we have preliminarily demonstrated the fabrication of multiple transistors and biosensors exhibiting excellent device-to-device performance consistency. Finally, we present a molecular dynamics modeling analysis of the scaling behavior of NASE. This work holds significant potential to leverage the superior properties of MoS2 and other emerging TMDCs for practical scale-up device applications.