Solution-processable integrated CMOS circuits based on colloidal CuInSe2 quantum dots.

The emerging technology of colloidal quantum dot electronics provides an opportunity for combining the advantages of well-understood inorganic semiconductors with the chemical processability of molecular systems. So far, most research on quantum dot electronic devices has focused on materials based on Pb- and Cd chalcogenides. In addition to environmental concerns associated with the presence of toxic metals, these quantum dots are not well suited for applications in CMOS circuits due to difficulties in integrating complementary n- and p-channel transistors in a common quantum dot active layer. Here, we demonstrate that by using heavy-metal-free CuInSe2 quantum dots, we can address the problem of toxicity and simultaneously achieve straightforward integration of complimentary devices to prepare functional CMOS circuits. Specifically, utilizing the same spin-coated layer of CuInSe2 quantum dots, we realize both p- and n-channel transistors and demonstrate well-behaved integrated logic circuits with low switching voltages compatible with standard CMOS electronics.

Spectroscopic and Magneto-Optical Signatures of Cu1+ and Cu2+ Defects in Copper Indium Sulfide Quantum Dots.

Colloidal quantum dots (QDs) of I-III-VI ternary compounds such as copper indium sulfide (CIS) and copper indium selenide (CISe) have been under intense investigation due to both their unusual photophysical properties and considerable technological utility. These materials feature a toxic-element-free composition, a tunable bandgap that covers near-infrared and visible spectral energies, and a highly efficient photoluminescence (PL) whose spectrum is located in the reabsorption-free intragap region. These properties make them attractive for light-emission and light-harvesting applications including photovoltaics and luminescent solar concentrators. Despite a large body of literature on device-related studies of CISe(S) QDs, the understanding of their fundamental photophysical properties is surprisingly poor. Two particular subjects that are still heavily debated in the literature include the mechanism(s) for strong intragap emission and the reason(s) for a poorly defined (featureless) absorption edge, which often "tails" below the nominal bandgap. Here, we address these questions by conducting comprehensive spectroscopic studies of CIS QD samples with varied Cu-to-In ratios using resonant PL and PL excitation, femtosecond transient absorption, and magnetic circular dichroism measurements. These studies reveal a strong effect of stoichiometry on the concentration of Cu1+ vs Cu2+ defects (occurring as CuIn″ and CuCu• species, respectively), and their effects on QD optical properties. In particular, we demonstrate that the increase in the relative amount of Cu2+ vs Cu1+ centers suppresses intragap absorption associated with Cu1+ states and sharpens band-edge absorption. In addition, we show that both Cu1+ and Cu2+ centers are emissive but are characterized by distinct activation mechanisms and slightly different emission energies due to different crystal lattice environments. An important overall conclusion of this study is that the relative importance of the Cu2+ vs Cu1+ emission/absorption channels can be controlled by tuning the Cu-to-In ratio, suggesting that the control of sample stoichiometry represents a powerful tool for achieving functionalities (e.g., strong intragap emission) that are not accessible with ideal, defect-free materials.

Charge-Transport Mechanisms in CuInSe xS2- x Quantum-Dot Films.

Colloidal quantum dots (QDs) have attracted considerable attention as promising materials for solution-processable electronic and optoelectronic devices. Copper indium selenium sulfide (CuInSe xS2- x or CISeS) QDs are particularly attractive as an environmentally benign alternative to the much more extensively studied QDs containing toxic metals such as Cd and Pb. Carrier transport properties of CISeS-QD films, however, are still poorly understood. Here, we aim to elucidate the factors that control charge conductance in CISeS QD solids and, based on this knowledge, develop practical approaches for controlling the polarity of charge transport and carrier mobilities. To this end, we incorporate CISeS QDs into field-effect transistors (FETs) and perform detailed characterization of these devices as a function of the Se/(Se+S) ratio, surface treatment, thermal annealing, and the identity of source and drain electrodes. We observe that as-synthesized CuInSe xS2- x QDs exhibit degenerate p-type transport, likely due to metal vacancies and CuIn'' anti-site defects (Cu1+ on an In3+ site) that act as acceptor states. Moderate-temperature annealing of the films in the presence of indium source and drain electrodes leads to switching of the transport polarity to nondegenerate n-type, which can be attributed to the formation of In-related defects such as InCu•• (an In3+ cation on a Cu1+ site) or Ini••• (interstitial In3+) acting as donors. We observe that the carrier mobilities increase dramatically (by 3 orders of magnitude) with increasing Se/(Se+S) ratio in both n- and p-type devices. To explain this observation, we propose a two-state conductance model, which invokes a high-mobility intrinsic band-edge state and a low-mobility defect-related intragap state. These states are thermally coupled, and their relative occupancies depend on both QD composition and temperature. Our observations suggest that the increase in the relative fraction of Se moves conduction- and valence band edges closer to low-mobility intragap levels. This results in increased relative occupancy of the intrinsic band-edge states and a corresponding growth of the measured mobility. Further improvement in charge-transport characteristics of the CISeS QD samples as well as their stability is obtained by infilling the QD films with amorphous Al2O3 using atomic layer deposition.

Droop-Free Colloidal Quantum Dot Light-Emitting Diodes.

Colloidal semiconductor quantum dots (QDs) are a highly promising materials platform for implementing solution-processable light-emitting diodes (LEDs). They combine high photostability of traditional inorganic semiconductors with chemical flexibility of molecular systems, which makes them well-suited for large-area applications such as television screens, solid-state lighting, and outdoor signage. Additional beneficial features include size-controlled emission wavelengths, narrow bandwidths, and nearly perfect emission efficiencies. State-of-the-art QD-LEDs exhibit high internal quantum efficiencies approaching unity. However, these peak values are observed only at low current densities ( J) and correspondingly low brightnesses, whereas at higher J, the efficiency usually exhibits a quick roll-off. This efficiency droop limits achievable brightness levels and decreases device longevity due to excessive heat generation. Here, we demonstrate QD-LEDs operating with high internal efficiencies (up to 70%) virtually droop-free up to unprecedented brightness of >100,000 cd m-2 (at ∼500 mA cm-2). This exceptional performance is derived from specially engineered QDs that feature a compositionally graded interlayer and a final barrier layer. This QD design allows for improved balance between electron and hole injections combined with considerably suppressed Auger recombination, which helps mitigate efficiency losses due to charge imbalance at high currents. These results indicate a significant potential of newly developed QDs as enablers of future ultrabright, highly efficient devices for both indoor and outdoor applications.

Phase-Transfer Ligand Exchange of Lead Chalcogenide Quantum Dots for Direct Deposition of Thick, Highly Conductive Films.

The use of semiconductor nanocrystal quantum dots (QDs) in optoelectronic devices typically requires postsynthetic chemical surface treatments to enhance electronic coupling between QDs and allow for efficient charge transport in QD films. Despite their importance in solar cells and infrared (IR) light-emitting diodes and photodetectors, advances in these chemical treatments for lead chalcogenide (PbE; E = S, Se, Te) QDs have lagged behind those of, for instance, II-VI semiconductor QDs. Here, we introduce a method for fast and effective ligand exchange for PbE QDs in solution, resulting in QDs completely passivated by a wide range of small anionic ligands. Due to electrostatic stabilization, these QDs are readily dispersible in polar solvents, in which they form highly concentrated solutions that remain stable for months. QDs of all three Pb chalcogenides retain their photoluminescence, allowing for a detailed study of the effect of the surface ionic double layer on electronic passivation of QD surfaces, which we find can be explained using the hard/soft acid-base theory. Importantly, we prepare highly conductive films of PbS, PbSe, and PbTe QDs by directly casting from solution without further chemical treatment, as determined by field-effect transistor measurements. This method allows for precise control over the surface chemistry, and therefore the transport properties of deposited films. It also permits single-step deposition of films of unprecedented thickness via continuous processing techniques, as we demonstrate by preparing a dense, smooth, 5.3-µm-thick PbSe QD film via doctor-blading. As such, it offers important advantages over laborious layer-by-layer methods for solar cells and photodetectors, while opening the door to new possibilities in ionizing-radiation detectors.

Nanocrystal Size-Dependent Efficiency of Quantum Dot Sensitized Solar Cells in the Strongly Coupled CdSe Nanocrystals/TiO2 System.

Light absorption and electron injection are important criteria determining solar energy conversion efficiency. In this research, monodisperse CdSe quantum dots (QDs) are synthesized with five different diameters, and the size-dependent solar energy conversion efficiency of CdSe quantum dot sensitized solar cell (QDSSCs) is investigated by employing the atomic inorganic ligand, S(2-). Absorbance measurements and transmission electron microscopy show that the diameters of the uniform CdSe QDs are 2.5, 3.2, 4.2, 6.4, and 7.8 nm. Larger CdSe QDs generate a larger amount of charge under the irradiation of long wavelength photons, as verified by the absorbance results and the measurements of the external quantum efficiencies. However, the smaller QDs exhibit faster electron injection kinetics from CdSe QDs to TiO2 because of the high energy level of CBCdSe, as verified by time-resolved photoluminescence and internal quantum efficiency results. Importantly, the S(2-) ligand significantly enhances the electronic coupling between the CdSe QDs and TiO2, yielding an enhancement of the charge transfer rate at the interfacial region. As a result, the S(2-) ligand helps improve the new size-dependent solar energy conversion efficiency, showing best performance with 4.2-nm CdSe QDs, whereas conventional ligand, mercaptopropionic acid, does not show any differences in efficiency according to the size of the CdSe QDs. The findings reported herein suggest that the atomic inorganic ligand reinforces the influence of quantum confinement on the solar energy conversion efficiency of QDSSCs.

Efficient Dye-Sensitized Solar Cells with Highly Catalytic Pt-Deposited ZnO/FTO Counter Electrode.

The development of novel cathode is essential for developing high performance dye sensitized solar cells (DSSCs). Here, Pt-coated ZnO nanostructures are used as cathodes of DSSCs to increase their photovoltaic performances. The ZnO nanostructures are grown by chemical bath deposition method, and then Pt is deposited on the nanostructured ZnO substrates. The scanning electron microscopy analyses show that nanostrcutrured Pt-deposited ZnO/FTO is well-formed on fluorinated tin oxide (FTO) substrate with yielding high surface area. The increase in the surface area of Pt-deposited ZnO/FTO leads to the high electrochemical kinetics for reduction of I3- to I-. As a result, the optimized Pt-deposited ZnO/FTO cathode shows the high photovoltaic performances of DSSCs about 6.70% of overall power conversion efficiency, which is 52% higher than the DSSCs using typical Pt-deposited FTO cathode.

Enhanced charge transfer kinetics of CdSe quantum dot-sensitized solar cell by inorganic ligand exchange treatments.

Enhancement of the charge transfer rate in CdSe quantum dot (QD) sensitized solar cells is one of the most important criteria determining cell efficiency. We report a novel strategy for enhancing charge transfer by exchanging the native, long organic chain to an atomic ligand, S(2-), with a simple solid exchange process. S(2-)-ligand exchange is easily executed by dipping the CdSe QDs sensitized photoanode into a formamide solution of K2S. The results show that this exchange process leads to an enhancement of the electronic coupling between CdSe QD and TiO2 by removing the insulating organic barrier to charge transfer, while maintaining its quantum confined band structure. This treatment significantly increases the charge transfer rate at the interfacial region between CdSe QDs and TiO2 as well as between the CdSe QDs and Red/Ox coupling electrolyte, as verified by time-resolved photoluminescence and electrochemical impedance spectroscopy measurements. Finally, the S(2-)-treated photoanode exhibits a much higher photovoltaic performance than the conventional MPA or TGA-capped CdSe QDs sensitized solar cell. The findings reported herein propose an innovative route toward harvesting energy from solar light by enhancing the carrier charge transfer rate.

Mesoporous siliconiobium phosphate as a pure Brønsted acid catalyst with excellent performance for the dehydration of glycerol to acrolein.

The development of solid acid catalysts that contain a high density of Brønsted acid sites with suitable acidity, as well as a long lifetime, is one of great challenges for the efficient dehydration of glycerol to acrolein. Herein, we report on a mesoporous siliconiobium phosphate (NbPSi-0.5) composite, which is a promising solid Brønsted acid that is a potential candidate for such a high-performance catalyst. A variety of characterization results confirm that NbPSi-0.5 contains nearly pure Brønsted acid sites and has well-defined large mesopores. In addition, NbPSi-0.5 contains a similar amount of acid sites and exhibits weaker acidity than that of the highly acidic niobium phosphate and HZSM-5 zeolite. NbPSi-0.5 is quite stable and has a high activity for the dehydration of glycerol. The stability of NbPSi-0.5 is about three times higher than that of the reported catalyst. The significantly enhanced catalytic performance of NbPSi-0.5 can be attributed to 1) nearly pure Brønsted acidity, which suppresses side reactions that lead to coke formation; 2) a significant reduction of pore blocking due to the mesopores; and 3) a decrease in the amount and oxidation temperature of coke.

Effect of TiO2 nanoparticle shape on hydrogen evolution via water splitting.

Pt/TiO2 nanospheres and nanorods were used to generate hydrogen via water splitting and the effect of the shapes of TiO2 nanoparticles were evaluated for hydrogen evolution. TiO2 nanorods exhibited an increase in charge transfer rate between the nanoparticle surface and the electrolyte. This led to improvement in the rate of photo-catalytic hydrogen evolution during the decomposition of water.

A combination of two visible-light responsive photocatalysts for achieving the Z-scheme in the solid state.

The light reaction in natural photosynthesis is generally recognized as one of the most efficient mechanisms for converting solar energy into other energy sources. We report herein on a novel strategy for generating H(2) fuel via an artificial Z-scheme mechanism by mimicking the natural photosynthesis that occurs in green plants. Designing a desirable photocatalyst by mimicking the Z-scheme mechanism leads to a conduction band that is sufficiently high to reduce protons, thus decreasing the probability of charge recombination. We combined two visible light sensitive photocatalysts, CdS and carbon-doped TiO(2), with different band structures. The used of this combination, that is, CdS/Au/TiO(1.96)C(0.04), resulted in the successful transfer of photogenerated electrons to a higher energy level in the form of the letter 'Z'. The system produced about a 4 times higher amount of H(2) under irradiation by visible light than CdS/Au/TiO(2). The findings reported herein describe an innovative route to harvesting energy by mimicking natural photosynthesis, and is independent of fossil fuels.