RESUMO
Room temperature lateral p+-i-n+light-emitting diodes (LEDs) with photonic crystals embedded in the i-region were fabricated on structures with Ge(Si) self-assembled islands and their optical properties were investigated. The use of preliminary amorphization and solid phase epitaxy of the implanted p+and n+contact regions made it possible to reduce the impurity activation temperature from 800 °Ð¡-1100 °Ð¡ to 600 °Ð¡, which corresponds to the growth temperature of Ge(Si) islands. This resulted in a significant reduction of the detrimental effect of the high-temperature annealing used for diode formation on the intensity and spectral position of the luminescence signal from the islands. It was shown that significant enhancement (more than an order of magnitude) of room temperature electroluminescence of Ge(Si) islands in the spectral range of 1.3-1.55µm can be achieved due to their interaction with different modes of the photonic crystals. The measured radiation power of the obtained diodes in the spectral range of 1.3-1.55µm exceeds 50 pW at a pump current of 8 mA, which is an order of magnitude higher than the previously achieved values for micro-LEDs with Ge(Si) nanoislands. The obtained results open up new possibilities for the realization of silicon-based light emitting devices operating at telecommunication wavelengths.
RESUMO
In this work we report, to the best of our knowledge, the first quantum well electrically-pumped microdisk lasers monolithically deposited on (001)-oriented Si substrate. The III-V laser structure was epitaxially grown by MOCVD on silicon with an intermediate MBE-grown Ge buffer. Microlasers with an InGaAs/GaAs quantum well active region were tested at room temperature. Under pulsed injection, lasing is achieved in microlasers with diameters of 23, 27, and 31 µm with a minimal threshold current density of 28 kA/cm2. Lasing spectrum is predominantly single-mode with a dominant mode linewidth as narrow as 35 pm.
