Spin reorientation transition in CoFeB/MgO/CoFeB tunnel junction enabled by ultrafast laser-induced suppression of perpendicular magnetic anisotropy.

Magnetic tunnel junction (MTJ) is a leading contender for next generation high-density nonvolatile memory technology. Fast and efficient switching of MTJs between different resistance states is a challenging problem, which can be tackled by using an unconventional stimulus-a femtosecond laser pulse. Herein, we report an experimental study of the laser-induced magnetization dynamics in a Co20Fe60B20/MgO/Co20Fe60B20 (CoFeB/MgO/CoFeB) MTJ with ultrathin CoFeB electrodes possessing perpendicular magnetic anisotropy (PMA). In addition to ultrafast demagnetization, a femtosecond laser pulse gives rise to a decaying magnetization precession in the thinner CoFeB layer subjected to an in-plane magnetic field, while the magnetization of the thicker CoFeB layer remains aligned with the applied field. Remarkably, the precession frequency demonstrates a strong and nonlinear rise with increasing pump fluence, which stems from the complete laser-induced suppression of PMA in the 1.2 nm-thick CoFeB electrode reached at a moderate fluence of about 1.8 mJ cm-2 at room temperature. This important feature signifies that the laser excitation of such an electrode can enable an ultrafast transition from a perpendicular-to-plane to an in-plane magnetization orientation in the absence of a magnetic field and reveals the feasibility of the laser-driven switching of MTJ between different states. The revealed gradual quenching of PMA with increasing fluence is explained by the laser-induced heating of the MTJ, which affects the interfacial magnetic anisotropy stronger than the shape anisotropy. Interestingly, at low fluences, the values of interfacial anisotropy and saturation magnetization altered by the laser excitation scale with each other as expected for the two-site anisotropic exchange interaction, but the scaling exponent increases significantly at moderate fluences, which enables the realization of a laser-induced spin reorientation transition.

On/off switching of bit readout in bias-enhanced tunnel magneto-Seebeck effect.

Thermoelectric effects in magnetic tunnel junctions are promising to serve as the basis for logic devices or memories in a "green" information technology. However, up to now the readout contrast achieved with Seebeck effects was magnitudes smaller compared to the well-established tunnel magnetoresistance effect. Here, we resolve this problem by demonstrating that the tunnel magneto-Seebeck effect (TMS) in CoFeB/MgO/CoFeB tunnel junctions can be switched on to a logic "1" state and off to "0" by simply changing the magnetic state of the CoFeB electrodes. This new functionality is achieved by combining a thermal gradient and an electric field. Our results show that the signal crosses zero and can be adjusted by tuning a bias voltage that is applied between the electrodes of the junction; hence, the name of the effect is bias-enhanced tunnel magneto-Seebeck effect (bTMS). Via the spin- and energy-dependent transmission of electrons in the junction, the bTMS effect can be configured using the bias voltage with much higher control than the tunnel magnetoresistance and even completely suppressed for only one magnetic configuration. Moreover, our measurements are a step towards the experimental realization of high TMS ratios without additional bias voltage, which are predicted for specific Co-Fe compositions.

Seebeck effect in magnetic tunnel junctions.

Creating temperature gradients in magnetic nanostructures has resulted in a new research direction, that is, the combination of magneto- and thermoelectric effects. Here, we demonstrate the observation of one important effect of this class: the magneto-Seebeck effect. It is observed when a magnetic configuration changes the charge-based Seebeck coefficient. In particular, the Seebeck coefficient changes during the transition from a parallel to an antiparallel magnetic configuration in a tunnel junction. In this respect, it is the analogue to the tunnelling magnetoresistance. The Seebeck coefficients in parallel and antiparallel configurations are of the order of the voltages known from the charge-Seebeck effect. The size and sign of the effect can be controlled by the composition of the electrodes' atomic layers adjacent to the barrier and the temperature. The geometric centre of the electronic density of states relative to the Fermi level determines the size of the Seebeck effect. Experimentally, we realized 8.8% magneto-Seebeck effect, which results from a voltage change of about -8.7 µV K⁻¹ from the antiparallel to the parallel direction close to the predicted value of -12.1 µV K⁻¹. In contrast to the spin-Seebeck effect, it can be measured as a voltage change directly without conversion of a spin current.