Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures.

In this Letter we report on the exploration of axial metal/semiconductor (Al/Ge) nanowire heterostructures with abrupt interfaces. The formation process is enabled by a thermal induced exchange reaction between the vapor-liquid-solid grown Ge nanowire and Al contact pads due to the substantially different diffusion behavior of Ge in Al and vice versa. Temperature-dependent I-V measurements revealed the metallic properties of the crystalline Al nanowire segments with a maximum current carrying capacity of about 0.8 MA/cm(2). Transmission electron microscopy (TEM) characterization has confirmed both the composition and crystalline nature of the pure Al nanowire segments. A very sharp interface between the ⟨111⟩ oriented Ge nanowire and the reacted Al part was observed with a Schottky barrier height of 361 meV. To demonstrate the potential of this approach, a monolithic Al/Ge/Al heterostructure was used to fabricate a novel impact ionization device.

Quantitative 3D micro-CT imaging of human lung tissue.

PURPOSE: To assess the feasibility of micro-CT for obtaining quantitative volumetric and morphologic information of changes in soft tissue, respiratory tracts and vascularization in fibrotic, emphysematous and non-diseased human lung specimens. MATERIALS AND METHODS: Specimens from autopsy or lung explantation with lung fibrosis of UIP pattern (n = 22) or centrilobular emphysema (n = 10) were scanned by micro-CT and compared to controls (n = 22). Imaging was performed subsequent to intravascular contrast enhancement for the assessment of the vascular volume fraction. The soft tissue and air fraction were quantified after the fixation of ventilated lungs followed by tissue contrast enhancement using osmium. Aiming an artifact-free 3 D reconstruction of lung acini, synchrotron-based micro-CT scans of specimens with emphysema (n = 5) and non-diseased tissue (n = 6) was performed. Micro-CT imaging was complemented by histology for the demonstration of comparable findings. RESULTS: Quantitative analysis showed a significant increase of the soft tissue fraction, equivalent to a decrease of the air fraction in fibrotic lungs compared to controls (p < 0.001) and a significant reduction of the vascular volume fraction compared to controls (p < 0.02). Specimens with emphysema demonstrated a significant increase of the air fraction with a decrease in soft tissue compared to controls (p < 0.001). 3 D reconstructions of lung acini worked successfully in non-diseased tissue but failed in fibrotic and emphysematous lungs. CONCLUSION: Our findings indicate micro-CT's technical feasibility to assess quantitative and morphological data from diseased and non-diseased human lung specimens.

Tuning the electro-optical properties of germanium nanowires by tensile strain.

In this Letter we present the electrical and electro-optical characterization of single crystalline germanium nanowires (NWs) under tensile strain conditions. The measurements were performed on vapor-liquid-solid (VLS) grown germanium (Ge) NWs, monolithically integrated into a micromechanical 3-point strain module. Uniaxial stress is applied along the ⟨111⟩ growth direction of individual, 100 nm thick Ge NWs while at the same time performing electrical and optical characterization at room temperature. Compared to bulk germanium, an anomalously high and negative-signed piezoresistive coefficient has been found. Spectrally resolved photocurrent characterization on strained NWs gives experimental evidence on the strain-induced modifications of the band structure. Particularly we are revealing a rapid decrease in resistivity and a red-shift in photocurrent spectra under high strain conditions. For a tensile strain of 1.8%, resistivity decreased by a factor of 30, and the photocurrent spectra shifted by 88 meV. Individual stressed NWs are recognized as an ideal platform for the exploration of strain-related electronic and optical effects and may contribute significantly to the realization of novel optoelectronic devices, strain-enhanced field-effect transistors (FETs), or highly sensitive strain gauges.

Tuning the electrical performance of Ge nanowire MOSFETs by focused ion beam implantation.

In this work, we demonstrate an approach to tune the electrical behavior of our Ω-gated germanium-nanowire (Ge-NW) MOSFETs by focused ion beam (FIB) implantation. For the MOSFETs, 35 nm thick Ge-NWs are covered by atomic layer deposition (ALD) of a high-κ gate dielectric. With the Ω-shaped metal gate acting as implantation mask, highly doped source/drain (S/D) contacts are formed in a self-aligned process by FIB implantation. Notably, without any dopant activation by annealing, the devices exhibit more than three orders of magnitude higher I(ON) currents, an improved I(ON)/I(OFF) ratio, a higher mobility and a reduced subthreshold slope of 140 mV/decade compared to identical Ge-NW MOSFETs without FIB implantation.

High performance Ω-gated Ge nanowire MOSFET with quasi-metallic source/drain contacts.

Ge nanowires (NWs) about 2 µm long and 35 nm in diameter are grown heteroepitaxially on Si(111) substrates in a hot wall low-pressure chemical vapor deposition (LP-CVD) system using Au as a catalyst and GeH(4) as precursor. Individual NWs are contacted to Cu pads via e-beam lithography, thermal evaporation and lift-off techniques. Self-aligned and atomically sharp quasi-metallic copper-germanide source/drain contacts are achieved by a thermal activated phase formation process. The Cu(3)Ge segments emerge from the Cu contact pads through axial diffusion of Cu which was controlled in situ by SEM, thus the active channel length of the MOSFET is adjusted without any restrictions from a lithographic process. Finally the conductivity of the channel is enhanced by Ga(+) implantation leading to a high performance Ω-gated Ge-NW MOSFET with saturation currents of a few microamperes.