Strain Heterogeneity and Extended Defects in Halide Perovskite Devices.

Strain is an important property in halide perovskite semiconductors used for optoelectronic applications because of its ability to influence device efficiency and stability. However, descriptions of strain in these materials are generally limited to bulk averages of bare films, which miss important property-determining heterogeneities that occur on the nanoscale and at interfaces in multilayer device stacks. Here, we present three-dimensional nanoscale strain mapping using Bragg coherent diffraction imaging of individual grains in Cs0.1FA0.9Pb(I0.95Br0.05)3 and Cs0.15FA0.85SnI3 (FA = formamidinium) halide perovskite absorbers buried in full solar cell devices. We discover large local strains and striking intragrain and grain-to-grain strain heterogeneity, identifying distinct islands of tensile and compressive strain inside grains. Additionally, we directly image dislocations with surprising regularity in Cs0.15FA0.85SnI3 grains and find evidence for dislocation-induced antiphase boundary formation. Our results shine a rare light on the nanoscale strains in these materials in their technologically relevant device setting.

Three-State Dielectric Switching within a Narrow Temperature Range in Isopropylammonium Lead Iodide, a One-Dimensional Perovskite with Polar Phase.

The phenomenon of dielectric switching has garnered considerable attention due to its potential applications in electronic and photonic devices. Typically, hybrid organic-inorganic perovskites, HOIPs, exhibit a binary (low-high) dielectric state transition, which, while useful, represents only the tip of the iceberg in terms of functional relevance. One way to boost the versatility of applications is the discovery of materials capable of nonbinary switching schemes, such as three-state dielectric switching. The ideal candidate for that task would exhibit a trio of attributes: two reversible, first-order phase transitions across three distinct crystal phases, minimal thermal hysteresis, and pronounced, step-like variations in dielectric permittivity, with a substantial change in its real part. Here, we demonstrate a one-dimensional lead halide perovskite with the formula (CH3)2C(H)NH3)PbI3, abbreviated as ISOPrPbI3, that fulfills these criteria and demonstrates three-state dielectric switching within a narrow temperature range of ca. 45 K. Studies on ISOPrPbI3 also revealed the polar nature of the low-temperature phase III below 266 K through pyrocurrent experiments, and the noncentrosymmetric character of the intermediate phase II and low-temperature phase III is confirmed via second harmonic generation measurements. Additionally, luminescence studies of ISOPrPbI3 have demonstrated combined broadband and narrow emission properties. The introduction of ISOPrPbI3 as a three-state dielectric switch not only addresses the limitations posed by the wide thermal gap between dielectric states in previous materials but also opens new avenues for the development of nonbinary dielectric switchable materials.

Grain Engineering of Sb2 S3 Thin Films to Enable Efficient Planar Solar Cells with High Open-Circuit Voltage.

Sb2 S3 is a promising environmentally friendly semiconductor for high performance solar cells. But, like many other polycrystalline materials, Sb2 S3 is limited by nonradiative recombination and carrier scattering by grain boundaries (GBs). This work shows how the GB density in Sb2 S3 films can be significantly reduced from 1068 ± 40 to 327 ± 23 nm µm-2 by incorporating an appropriate amount of Ce3+ into the precursor solution for Sb2 S3 deposition. Through extensive characterization of structural, morphological, and optoelectronic properties, complemented with computations, it is revealed that a critical factor is the formation of an ultrathin Ce2 S3 layer at the CdS/Sb2 S3 interface, which can reduce the interfacial energy and increase the adhesion work between Sb2 S3 and the substrate to encourage heterogeneous nucleation of Sb2 S3 , as well as promote lateral grain growth. Through reductions in nonradiative recombination at GBs and/or the CdS/Sb2 S3 heterointerface, as well as improved charge-carrier transport properties at the heterojunction, this work achieves high performance Sb2 S3 solar cells with a power conversion efficiency reaching 7.66%. An impressive open-circuit voltage (VOC ) of 796 mV is achieved, which is the highest reported thus far for Sb2 S3 solar cells. This work provides a strategy to simultaneously regulate the nucleation and growth of Sb2 S3 absorber films for enhanced device performance.

Identification and Mitigation of Transient Phenomena That Complicate the Characterization of Halide Perovskite Photodetectors.

Halide perovskites have shown promise to advance the field of light detection in next-generation photodetectors, offering performance and functionality beyond what is currently possible with traditional inorganic semiconductors. Despite a relatively high density of defects in perovskite thin films, long carrier diffusion lengths and lifetimes suggest that many defects are benign. However, perovskite photodetectors show detection behavior that varies with time, creating inconsistent device performance and difficulties in accurate characterization. Here, we link the changing behavior to mobile defects that migrate through perovskites, leading to detector currents that drift on the time scale of seconds. These effects not only complicate reproducible device performance but also introduce characterization challenges. We demonstrate that such transient phenomena generate measurement artifacts that mean the value of specific detectivity measured can vary by up to 2 orders of magnitude even in the same device. The presence of defects can lead to photoconductive gain in photodetectors, and we show batch-to-batch processing variations in perovskite devices gives varying degrees of charge carrier injection and photocurrent amplification under low light intensities. We utilize the passivating effect of aging to reduce the impact of defects, minimizing current drifts and eliminating the gain. This work highlights the potential issues arising from mobile defects, which lead to inconsistent photodetector operation, and identifies the potential for defects to tune photodetection behavior in perovskite photodetectors.

Imaging Light-Induced Migration of Dislocations in Halide Perovskites with 3D Nanoscale Strain Mapping.

In recent years, halide perovskite materials have been used to make high-performance solar cells and light-emitting devices. However, material defects still limit device performance and stability. Here, synchrotron-based Bragg coherent diffraction imaging is used to visualize nanoscale strain fields, such as those local to defects, in halide perovskite microcrystals. Significant strain heterogeneity within MAPbBr3 (MA = CH3 NH3 + ) crystals is found in spite of their high optoelectronic quality, and both 〈100〉 and 〈110〉 edge dislocations are identified through analysis of their local strain fields. By imaging these defects and strain fields in situ under continuous illumination, dramatic light-induced dislocation migration across hundreds of nanometers is uncovered. Further, by selectively studying crystals that are damaged by the X-ray beam, large dislocation densities and increased nanoscale strains are correlated with material degradation and substantially altered optoelectronic properties assessed using photoluminescence microscopy measurements. These results demonstrate the dynamic nature of extended defects and strain in halide perovskites, which will have important consequences for device performance and operational stability.

Tailoring Interlayer Charge Transfer Dynamics in 2D Perovskites with Electroactive Spacer Molecules.

The family of hybrid organic-inorganic lead-halide perovskites are the subject of intense interest for optoelectronic applications, from light-emitting diodes to photovoltaics to X-ray detectors. Due to the inert nature of most organic molecules, the inorganic sublattice generally dominates the electronic structure and therefore the optoelectronic properties of perovskites. Here, we use optically and electronically active carbazole-based Cz-Ci molecules, where Ci indicates an alkylammonium chain and i indicates the number of CH2 units in the chain, varying from 3 to 5, as cations in the two-dimensional (2D) perovskite structure. By investigating the photophysics and charge transport characteristics of (Cz-Ci)2PbI4, we demonstrate a tunable electronic coupling between the inorganic lead-halide and organic layers. The strongest interlayer electronic coupling was found for (Cz-C3)2PbI4, where photothermal deflection spectroscopy results remarkably reveal an organic-inorganic charge transfer state. Ultrafast transient absorption spectroscopy measurements demonstrate ultrafast hole transfer from the photoexcited lead-halide layer to the Cz-Ci molecules, the efficiency of which increases by varying the chain length from i = 5 to i = 3. The charge transfer results in long-lived carriers (10-100 ns) and quenched emission, in stark contrast to the fast (sub-ns) and efficient radiative decay of bound excitons in the more conventional 2D perovskite (PEA)2PbI4, in which phenylethylammonium (PEA) acts as an inert spacer. Electrical charge transport measurements further support enhanced interlayer coupling, showing increased out-of-plane carrier mobility from i = 5 to i = 3. This study paves the way for the rational design of 2D perovskites with combined inorganic-organic electronic properties through the wide range of functionalities available in the world of organics.

Achieving ideal transistor characteristics in conjugated polymer semiconductors.

Organic thin-film transistors (OTFTs) with ideal behavior are highly desired, because nonideal devices may overestimate the intrinsic property and yield inferior performance in applications. In reality, most polymer OTFTs reported in the literature do not exhibit ideal characteristics. Supported by a structure-property relationship study of several low-disorder conjugated polymers, here, we present an empirical selection rule for polymer candidates for textbook-like OTFTs with high reliability factors (100% for ideal transistors). The successful candidates should have low energetic disorder along their backbones and form thin films with spatially uniform energetic landscapes. We demonstrate that these requirements are satisfied in the semicrystalline polymer PffBT4T-2DT, which exhibits a reliability factor (~100%) that is exceptionally high for polymer devices, rendering it an ideal candidate for OTFT applications. Our findings broaden the selection of polymer semiconductors with textbook-like OTFT characteristics and would shed light upon the molecular design criteria for next-generation polymer semiconductors.

Bispalladium(II) Complexes of di-p-Pyrirubyrin Derivatives as Promising Near-Infrared Photoacoustic Dyes.

The insertion of palladium(II) into di-p-pyrirubyrin results in mutually convertible bimetallic complexes. Post-synthetic functionalization of one of them yielded bispalladium(II) dioxo-di-p-pyrirubyrin and, after demetallation, dioxo-di-p-pyrirubyrin, introducing for the first time the α,ß'-pyridin-2-one unit into the macrocyclic frame. Bispalladium(II) di-p-pyrirubyrin 6, bispalladium(II) dioxo-di-p-pyrirubyrin 9, and dioxo-di-p-pyrirubyrin 10 absorb and emit light around 1000 nm and are characterized by high photostability. Thus, they are promising candidates for near-infrared photoacoustic dyes, ideally targeting (9) the wavelength of Yb-based fiber lasers. The incorporation of an α,ß'-pyridine moiety into expanded porphyrins opens a highly interesting area of research due to the attractive optical and coordination properties of the resulting molecules.

Bright and stable perovskite light-emitting diodes in the near-infrared range.

Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1-15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm-2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm-2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm-2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm-2, along with a high radiance of more than 3,200 W s-1 m-2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s-1 m-2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

High n-type and p-type conductivities and power factors achieved in a single conjugated polymer.

The charge transport properties of conjugated polymers are commonly limited by the energetic disorder. Recently, several amorphous conjugated polymers with planar backbone conformations and low energetic disorder have been investigated for applications in field-effect transistors and thermoelectrics. However, there is a lack of strategy to finely tune the interchain π-π contacts of these polymers that severely restricts the energetic disorder of interchain charge transport. Here, we demonstrate that it is feasible to achieve excellent conductivity and thermoelectric performance in polymers based on thiophene-fused benzodifurandione oligo(p-phenylenevinylene) through reducing the crystallization rate of side chains and, in this way, carefully controlling the degree of interchain π-π contacts. N-type (p-type) conductivities of more than 100 S cm-1 (400 S cm-1) and power factors of more than 200 µW m-1 K-2 (100 µW m-1 K-2) were achieved within a single polymer doped by different dopants. It further demonstrated the state-of-the-art power output of the first flexible single-polymer thermoelectric generator.

Charge transport in mixed metal halide perovskite semiconductors.

Investigation of the inherent field-driven charge transport behaviour of three-dimensional lead halide perovskites has largely remained challenging, owing to undesirable ionic migration effects near room temperature and dipolar disorder instabilities prevalent specifically in methylammonium-and-lead-based high-performing three-dimensional perovskite compositions. Here, we address both these challenges and demonstrate that field-effect transistors based on methylammonium-free, mixed metal (Pb/Sn) perovskite compositions do not suffer from ion migration effects as notably as their pure-Pb counterparts and reliably exhibit hysteresis-free p-type transport with a mobility reaching 5.4 cm2 V-1 s-1. The reduced ion migration is visualized through photoluminescence microscopy under bias and is manifested as an activated temperature dependence of the field-effect mobility with a low activation energy (~48 meV) consistent with the presence of the shallow defects present in these materials. An understanding of the long-range electronic charge transport in these inherently doped mixed metal halide perovskites will contribute immensely towards high-performance optoelectronic devices.

Tunable Multiband Halide Perovskite Tandem Photodetectors with Switchable Response.

Photodetectors with multiple spectral response bands have shown promise to improve imaging and communications through the switchable detection of different photon energies. However, demonstrations to date have been limited to only two bands and lack capability for fast switching in situ. Here, we exploit the band gap tunability and capability of all-perovskite tandem solar cells to demonstrate a new device concept realizing four spectral bands of response from a single multijunction device, with fast, optically controlled switching between the bands. The response to monochromatic light is highly selective and narrowband without the need for additional filters and switches to broader response bands on applying bias light. Sensitive photodetection above 6 × 1011 Jones is demonstrated in all modes, with rapid switching response times of <250 ns. We demonstrate proof of principle on how the manipulation of the modular multiband detector response through light conditions enables diverse applications in optical communications with secure encryption.

The effect of caesium alloying on the ultrafast structural dynamics of hybrid organic-inorganic halide perovskites.

Hybrid inorganic-organic perovskites have attracted considerable attention over recent years as promising processable electronic materials. In particular, the rich structural dynamics of these 'soft' materials has become a subject of investigation and debate due to their direct influence on the perovskites' optoelectronic properties. Significant effort has focused on understanding the role and behaviour of the organic cations within the perovskite, as their rotational dynamics may be linked to material stability, heterogeneity and performance in (opto)electronic devices. To this end, we use two-dimensional IR spectroscopy (2DIR) to understand the effect of partial caesium alloying on the rotational dynamics of the methylammonium cation in the archetypal hybrid perovskite CH3NH3PbI3. We find that caesium incorporation primarily inhibits the slower 'reorientational jump' modes of the organic cation, whilst a smaller effect on the fast 'wobbling time' may be due to distortions and rigidisation of the inorganic cuboctahedral cage. 2DIR centre-line-slope analysis further reveals that while static disorder increases with caesium substitution, the dynamic disorder (reflected in the phase memory of the N-H stretching mode of methylammonium) is largely independent of caesium addition. Our results contribute to the development of a unified model of cation dynamics within organohalide perovskites.

Pr3+ doped NaYF4 and LiYF4 nanocrystals combining visible-to-UVC upconversion and NIR-to-NIR-II downconversion luminescence emissions for biomedical applications.

Lanthanide-doped fluoride nanocrystals (NCs) are known to exhibit unique optical properties, such as upconversion and downconversion luminescence (UCL and DCL), which can be employed for various applications. In this work, we demonstrate that by doping praseodymium(III) and ytterbium(III) ions (Pr3+ and Yb3+) into a nanosized fluoride matrix (i.e. NaYF4 and LiYF4), it is possible to combine their UCL and DCL properties that can be concurrently used for biomedical applications. In particular, the emissive modes combined in a single nanoparticle co-doped with Pr3+ and Yb3+ include DCL emission (excited at 980 nm and peaked at 1320 nm), which can be used for near infrared (NIR) DCL bioimaging in the NIR-II window of biological tissue transparency (∼1000-1350 nm) and UCL emission (excited at 447 nm and peaked at 275 nm) that can be employed for germicide action (via irradiation by light in the UVC range). A possibility of the latter was demonstrated by the denaturation of double-stranded DNA (dsDNA) into single-stranded ones that was caused by the UVC UCL emission from the NCs under 447 nm irradiation; it was evidenced by the hyperchromicity observed in the irradiated dsDNA solution and also by a fluorometric analysis of DNA unwinding (FADU) assay. Concurrently, the possibility of NIR-II luminescence bioimaging through biological tissues (bovine tooth and chicken flesh) was demonstrated. The proposed concept paves a way for NIR-II imaging guided antimicrobial phototherapy using lanthanide-doped fluoride nanocrystals.

Strong absorption and ultrafast localisation in NaBiS2 nanocrystals with slow charge-carrier recombination.

I-V-VI2 ternary chalcogenides are gaining attention as earth-abundant, nontoxic, and air-stable absorbers for photovoltaic applications. However, the semiconductors explored thus far have slowly-rising absorption onsets, and their charge-carrier transport is not well understood yet. Herein, we investigate cation-disordered NaBiS2 nanocrystals, which have a steep absorption onset, with absorption coefficients reaching >105 cm-1 just above its pseudo-direct bandgap of 1.4 eV. Surprisingly, we also observe an ultrafast (picosecond-time scale) photoconductivity decay and long-lived charge-carrier population persisting for over one microsecond in NaBiS2 nanocrystals. These unusual features arise because of the localised, non-bonding S p character of the upper valence band, which leads to a high density of electronic states at the band edges, ultrafast localisation of spatially-separated electrons and holes, as well as the slow decay of trapped holes. This work reveals the critical role of cation disorder in these systems on both absorption characteristics and charge-carrier kinetics.

Experimental and Theoretical Studies of the Electronic Band Structure of Bulk and Atomically Thin Mo1-x W x Se2 Alloys.

We present studies focused on the evolution of the electronic band structure of the Mo1-x W x Se2 alloy with the tungsten content, which was conducted by combining experimental and theoretical methods. Employed spectroscopic techniques, namely, photoreflectance, photoacoustic spectroscopy, and photoluminescence, allowed observing indirect and direct transitions at high and beyond high-symmetry points of the Brillouin zone (BZ). Two excitons (A and B) associated with the K point of the BZ were observed together with other optical transitions (C and D) related to band nesting. Moreover, we have also identified the indirect transition for the studied crystals. Obtained energies for all transitions were tracked with a tungsten content and compared with results of calculations performed within density functional theory. Furthermore, based on the mentioned comparison, optical transitions were assigned to specific regions of the BZ. Finally, we have obtained bowing parameters for experimentally observed features, for, i.e., thin-film samples: b(A) = 0.13 ± 0.03 eV, b(B) = 0.14 ± 0.03 eV, b(C) = 0.044 ± 0.008 eV, and b(D) = 0.010 ± 0.003 eV.

Exfoliated CrPS4 with Promising Photoconductivity.

Layered semiconductors have attracted significant attention due to their diverse physical properties controlled by composition and the number of stacked layers. Herein, large crystals of the ternary layered semiconductor chromium thiophosphate (CrPS4 ) are prepared by a vapor transport synthesis. Optical properties are determined using photoconduction, absorption, photoreflectance, and photoacoustic spectroscopy exposing the semiconducting properties of the material. A simple, one-step protocol for mechanical exfoliation onto a transmission electron microscope grid is developed, and multiple layers are characterized by advanced electron microscopy methods, including atomic resolution elemental mapping confirming the structure by directly showing the positions of the columns of different elements' atoms. CrPS4 is also liquid exfoliated, and in combination with colloidal graphene, an ink-jet-printed photodetector is created. This all-printed graphene/CrPS4 /graphene heterostructure detector demonstrates a specific detectivity of 8.3 × 108 (D*). This study shows a potential application of both bulk crystal and individual flakes of CrPS4 as active components in light detection, when introduced as ink-printable moieties with a large benefit for manufacturing.

Exciton Binding Energy of Two-Dimensional Highly Luminescent Colloidal Nanostructures Determined from Combined Optical and Photoacoustic Spectroscopies.

Reduced dimensionality of structures such as 0D quantum dots, 1D nanorods, and 2D nanoplatelets is predicted to favor the creation of tightly bound excitons stable at room temperature, making experimental determination of the exciton binding energy ( R x) crucial for evaluating the performance of semiconductor nanoparticles. We propose a fully optical approach for R x determination based on a complementary combination of photoacoustic and transmission spectra, using 5.5, 4.5, and 3.5 ML CdSe nanoplatelets as a benchmark system. The absence of excitonic features in photoacoustic spectra allows for probing the band-to-band transition, leading to the band gap determination. Such an unusual effect is explained by efficient re-emission of the absorbed radiation typical for high quantum yield structures, keeping the crystal lattice from excess phonon generation. The determined exciton binding energy for CdSe nanoplatelets ranges from 130 to 230 meV, confirming the presence of robust excitons in highly confined 2D systems.

Optical Properties of In2 xGa2-2 xO3 Nanowires Revealed by Photoacoustic Spectroscopy.

Group III oxides, such as In2O3 and Ga2O3, have proved to be good candidates as active materials for novel electronic devices, including high-mobility transistors, gas sensors, and UV photodetectors. The ability to tune optical and electronic properties is provided by alloying In2 xGa2-2 xO3 (InGaO) in a broad compositional range. Further development of InGaO compounds in the form of nanowires (NWs) would overcome the technological limitations, such as the substrate crystal lattice mismatch and the inability to fabricate high quality structures above the critical thickness. In this work, optical properties of alloyed InGaO NWs in a wide compositional range are carefully assessed. Unlike classical optical characterization methods, photoacoustic spectroscopy reveals the fundamental absorption edge despite the strong light scattering in porous and randomly oriented nanowires structure. An unusual compositional band gap dependence is also observed, giving insight into the phase segregation effect and increased quality of mixed NWs. In addition, photoacoustic measurements disclose potential applications of InGaO NWs in remote, light-driven loudspeakers because of intense photoacoustic effect in nanowire ensembles in this material system.