Stretching magnetism with an electric field in a nitride semiconductor.

The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface-exploited in high-power/high-frequency electronics-and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm-1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.

Evidence for long-lived quasiparticles trapped in superconducting point contacts.

We have observed that the supercurrent across phase-biased, highly transmitting atomic size contacts is strongly reduced within a broad phase interval around π. We attribute this effect to quasiparticle trapping in one of the discrete subgap Andreev bound states formed at the contact. Trapping occurs essentially when the Andreev energy is smaller than half the superconducting gap Δ, a situation in which the lifetime of trapped quasiparticles is found to exceed 100 µs. The origin of this sharp energy threshold is presently not understood.

Ion beam shaping and downsizing of nanostructures.

We report a new approach for progressive and well-controlled downsizing of nanostructures below the 10 nm scale. A low energetic ion beam (Ar(+)) is used for gentle surface erosion, progressively shrinking the dimensions with ∼1 nm accuracy. The method enables shaping of the nanostructure geometry and polishing of the surface. The process is clean room/high vacuum compatible being suitable for various applications. Apart from technological advantages, the method enables the study of various size phenomena on the same sample between sessions of ion beam treatment.