RESUMO
Femtosecond laser drilled holes of GaSbBi were characterized by the joint measurements of photoconductivity (PC) spectroscopy and laser-beam-induced current (LBIC) mapping. The excitation light in PC was focused down to 60 µm presenting the spectral information of local electronic property of individual holes. A redshift of energy band edge of about 6-8 meV was observed by the PC measurement when the excitation light irradiated on the laser drilled holes. The spatial resolving of photoelectric property was achieved by the LBIC mapping which shows "pseudo-holes" with much larger dimensions than the geometric sizes of the holes. The reduced LBIC current with the pseudo-holes is associated with the redshift effect indicating that the electronic property of the rim areas of the holes is modified by the femtosecond laser drilling.
RESUMO
Femtosecond-laser drilling may induce holes in HgCdTe with morphology similar to that induced by ion-milling in loophole technique. So-formed hole structures are proven to be pn junction diodes by the laser beam induced current characterization as well as the conductivity measurement. Transmission and photoluminescence spectral measurements on a n-type dominated hole-array structure give rise to different results from those of an ion-milled sample.
