Unlocking the Ambient Temperature Effect on FA-Based Perovskites Crystallization by In Situ Optical Method.

Multiple cation-composited perovskites are demonstrated as a promising approach to improving the performance and stability of perovskite solar cells (PSCs). However, recipes developed for fabricating high-performance perovskites in laboratories are always not transferable in large-scale production, as perovskite crystallization is highly sensitive to processing conditions. Here, using an in situ optical method, the ambient temperature effect on the crystallization process in multiple cation-composited perovskites is investigated. It is found that the typical solvent-coordinated intermediate phase in methylammonium lead iodide (MAPbI3 ) is absent in formamidinium lead iodide (FAPbI3 ), and nucleation is almost completed in FAPbI3 right after spin-coating. Interestingly, it is found that there is noticeable nuclei aggregation in Formamidinium (FA)-based perovskites even during the spin-coating process, which is usually only observed during the annealing in MAPbI3 . Such aggregation is further promoted at a higher ambient temperature or in higher FA content. Instead of the general belief of stress release-induced crack formation, it is proposed that the origin of the cracks in FA-based perovskites is due to the aggregation-induced solute depletion effect. This work reveals the limiting factors for achieving high-quality FA-based perovskite films and helps to unlock the existing narrow processing window for future large-scale production.

Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss.

Wide-bandgap perovskites as a class of promising top-cell materials have shown great promise in constructing efficient perovskite-based tandem solar cells, but their intrinsic relatively low radiative efficiency results in a large open-circuit voltage (VOC) deficit and thereby limits the whole device performance. Reducing film flaws or optimizing interfacial energy level alignments in wide-bandgap perovskite devices can efficiently inhibit nonradiative recombination to boost device VOC and efficiency. However, the simultaneous regulation on both sides and their underlying mechanism are less explored. Herein, a bifunctional modification approach is proposed to optimize the wide-bandgap perovskite surface with an ultrathin layer of phenylethylammonium acetate (PEAAc) to synchronously decrease the surface imperfection and mitigate the interfacial energy barrier. This treatment effectively heals under-coordinated surface defects through the formation of chemical interaction between the perovskite and PEAAc, bringing about a much slower charge trapping process and dramatically decreasing nonradiative recombination losses. Meanwhile, the passivation-induced upshifted Fermi level of the perovskite contributes to accelerated electron extraction and larger Fermi-level splitting under illumination. Consequently, the PEAAc-modified wide-bandgap (1.68 eV) device achieves an optimal efficiency of 20.66% with a high VOC of 1.25 V, among the highest reported VOC values for wide-bandgap perovskite devices, enormously outperforming that (18.86% and 1.18 V) of the device without passivation. In addition, the radiative limit of VOC for both cells is determined to be 1.42 V, delivering nonradiative recombination losses of 0.24 and 0.17 V for the control and PEAAc-modified devices, respectively. These results highlight the significance of the bifunctional modification strategy in achieving high-performance wide-bandgap perovskite devices.

Heat Transfer Enhancement of n-Type Organic Semiconductors by an Insulator Blend Approach.

The transfer of heat energy in organic semiconductors (OSCs) plays an important role in advancing the applications of organic electronics, especially for lifetime issues. However, compared with crystalline inorganic semiconductors, the thermal transport of OSCs is less efficient and a relevant understanding is very limited. In this contribution, we show that the heat conduction of OSCs can be enhanced by blending with a "commodity" insulator (both thermal and electrical). PC71BM, a well-known electron transporter but poor thermal conductor, was selected as the host OSC material. The blending of a small amount of polystyrene (PS), a commonly used insulating polymer, can facilitate the heat transfer of PC71BM films, as substantiated by the scanning photothermal deflection technique and an infrared thermal camera. The phase thermodynamics of PC71BM/PS blends indicates that the efficient heat transfer preferably occurs in the OSC/insulator blends with better intimate mixing, where isolated PC71BM domains can be effectively bridged by PS that thread through the regions. The applicability of this approach can be observed in blends with another host material─ITIC. This work provides a facile strategy for designing thermally durable organic electronic devices.

Approaching disorder-tolerant semiconducting polymers.

Doping has been widely used to control the charge carrier concentration in organic semiconductors. However, in conjugated polymers, n-doping is often limited by the tradeoff between doping efficiency and charge carrier mobilities, since dopants often randomly distribute within polymers, leading to significant structural and energetic disorder. Here, we screen a large number of polymer building block combinations and explore the possibility of designing n-type conjugated polymers with good tolerance to dopant-induced disorder. We show that a carefully designed conjugated polymer with a single dominant planar backbone conformation, high torsional barrier at each dihedral angle, and zigzag backbone curvature is highly dopable and can tolerate dopant-induced disorder. With these features, the designed diketopyrrolopyrrole (DPP)-based polymer can be efficiently n-doped and exhibit high n-type electrical conductivities over 120 S cm-1, much higher than the reference polymers with similar chemical structures. This work provides a polymer design concept for highly dopable and highly conductive polymeric semiconductors.

Phase management in single-crystalline vanadium dioxide beams.

A systematic study of various metal-insulator transition (MIT) associated phases of VO2, including metallic R phase and insulating phases (T, M1, M2), is required to uncover the physics of MIT and trigger their promising applications. Here, through an oxide inhibitor-assisted stoichiometry engineering, we show that all the insulating phases can be selectively stabilized in single-crystalline VO2 beams at room temperature. The stoichiometry engineering strategy also provides precise spatial control of the phase configurations in as-grown VO2 beams at the submicron-scale, introducing a fresh concept of phase transition route devices. For instance, the combination of different phase transition routes at the two sides of VO2 beams gives birth to a family of single-crystalline VO2 actuators with highly improved performance and functional diversity. This work provides a substantial understanding of the stoichiometry-temperature phase diagram and a stoichiometry engineering strategy for the effective phase management of VO2.

MXene-Modulated Electrode/SnO2 Interface Boosting Charge Transport in Perovskite Solar Cells.

Interface engineering is imperative to boost the extraction capability in perovskite solar cells (PSCs). We propose a promising approach to enhance the electron mobility and charge transfer ability of tin oxide (SnO2) electron transport layer (ETL) by introducing a two-dimensional carbide (MXene) with strong interface interaction. The MXene-modified SnO2 ETL also offers a preferable growth platform for perovskite films with reduced trap density. Through a spatially resolved imaging technique, profoundly reduced non-radiative recombination and charge transport losses in PSCs based on MXene-modified SnO2 are also observed. As a result, the PSC achieves an enhanced efficiency of 20.65% with ultralow saturated current density and negligible hysteresis. We provide an in-depth mechanistic understanding of MXene interface engineering, offering an alternative approach to obtain efficient PSCs.

Oxide Inhibitor-Assisted Growth of Single-Layer Molybdenum Dichalcogenides (MoX2, X = S, Se, Te) with Controllable Molybdenum Release.

Though chemical vapor deposition (CVD) methods have been widely used in the growth of two-dimensional transition-metal dichalcogenides (2D TMDCs), the controllable fabrication of 2D TMDCs is yet hard to achieve because of the great challenge of concisely controlling the release of precursors vapor, one of the most critical growth kinetic factors. To solve this important issue, here we report the utilization of oxide inhibitors covering Mo source during CVD reactions to manipulate the release of Mo vapor. In contrast to the lack of capability of conventional CVD methods, 2D molybdenum dichalcogenide (MoX2, X = S, Se, Te) monolayers were successfully fabricated through the proposed CVD protocol with the oxide-inhibitor-assisted growth (OIAG) strategy. In this way, despite the fact that only separated MoTe2 flakes were prepared, both MoS2 (continuous and clean) and MoSe2 (continuous but dotted) monolayer films at the scale of centimeter were obtained. The presented OIAG method enables a comprehensive understanding and precise control of the reaction kinetics for improved growth of 2D MoX2.

Highly Crystalline Near-Infrared Acceptor Enabling Simultaneous Efficiency and Photostability Boosting in High-Performance Ternary Organic Solar Cells.

The near-infrared (NIR) absorbing fused-ring electron acceptor, COi8DFIC, has demonstrated very good photovoltaic performance when combined with PTB7-Th as a donor in binary organic solar cells (OSCs). In this work, the NIR acceptor was added to state-of-the-art PBDBT-2F:IT4F-based solar cells as a third component, leading to (i) an efficiency increase of the ternary devices compared to the binary solar cells in the presence of the highly crystalline COi8DFIC acceptor and (ii) much-improved photostability under 1-sun illumination. The electron transport properties were investigated and revealed the origin of the enhanced device performance. Compared to the binary cells, the optimized ternary PBDBT-2F:COi8DFIC:IT4F blends exhibit improved electron transport properties in the presence of 10% COi8DFIC, which is attributed to improved COi8DFIC molecular packing. Furthermore, transient absorption spectroscopy revealed a slow recombination of charge carriers in the ternary blend. The improved electron transport properties were preserved in the ternary OSC upon aging, while in the binary devices they seriously deteriorated after simulated 1-sun illumination of 240 h. Our work demonstrates a simple approach to enhance both OSC efficiency and photostability.