A robust and tunable Luttinger liquid in correlated edge of transition-metal second-order topological insulator Ta2Pd3Te5.

The interplay between topology and interaction always plays an important role in condensed matter physics and induces many exotic quantum phases, while rare transition metal layered material (TMLM) has been proved to possess both. Here we report a TMLM Ta2Pd3Te5 has the two-dimensional second-order topology (also a quadrupole topological insulator) with correlated edge states - Luttinger liquid. It is ascribed to the unconventional nature of the mismatch between charge- and atomic- centers induced by a remarkable double-band inversion. This one-dimensional protected edge state preserves the Luttinger liquid behavior with robustness and universality in scale from micro- to macro- size, leading to a significant anisotropic electrical transport through two-dimensional sides of bulk materials. Moreover, the bulk gap can be modulated by the thickness, resulting in an extensive-range phase diagram for Luttinger liquid. These provide an attractive model to study the interaction and quantum phases in correlated topological systems.

Signature of quantum criticality in cuprates by charge density fluctuations.

The universality of the strange metal phase in many quantum materials is often attributed to the presence of a quantum critical point (QCP), a zero-temperature phase transition ruled by quantum fluctuations. In cuprates, where superconductivity hinders direct QCP observation, indirect evidence comes from the identification of fluctuations compatible with the strange metal phase. Here we show that the recently discovered charge density fluctuations (CDF) possess the right properties to be associated to a quantum phase transition. Using resonant x-ray scattering, we studied the CDF in two families of cuprate superconductors across a wide doping range (up to p = 0.22). At p* ≈ 0.19, the putative QCP, the CDF intensity peaks, and the characteristic energy Δ is minimum, marking a wedge-shaped region in the phase diagram indicative of a quantum critical behavior, albeit with anomalies. These findings strengthen the role of charge order in explaining strange metal phenomenology and provide insights into high-temperature superconductivity.

Correlating the charge-transfer gap to the maximum transition temperature in Bi2Sr2Can-1CunO2n+4+δ.

As the number of CuO2 layers, n, in each unit cell of a cuprate family increases, the maximum transition temperature (Tc,max) exhibits a universal bell-shaped curve with a peak at n = 3. The microscopic mechanism of this trend remains elusive. In this study, we used advanced electron microscopy to image the atomic structure of cuprates in the Bi2Sr2Can-1CunO2n+4+δ family with 1 ≤ n ≤ 9; the evolution of the charge-transfer gap size (Δ) with n can be measured simultaneously. We determined that the n dependence of Δ follows an inverted bell-shaped curve with the minimum Δ value at n = 3. The correlation between Δ, n, and Tc,max may clarify the origin of superconductivity in cuprates.

Exfoliation of 2D van der Waals crystals in ultrahigh vacuum for interface engineering.

Two-dimensional (2D) materials and their heterostructures have been intensively studied in recent years due to their potential applications in electronic, optoelectronic, and spintronic devices. Nonetheless, the realization of 2D heterostructures with atomically flat and clean interfaces remains challenging, especially for air-sensitive materials, which hinders the in-depth investigation of interface-induced phenomena and the fabrication of high-quality devices. Here, we circumvented this challenge by exfoliating 2D materials in an ultrahigh vacuum. Remarkably, ultraflat and clean substrate surfaces can assist the exfoliation of 2D materials, regardless of the substrate and 2D material, thus providing a universal method for the preparation of heterostructures with ideal interfaces. In addition, we studied the properties of two prototypical systems that cannot be achieved previously, including the electronic structure of monolayer phospherene and optical responses of transition metal dichalcogenides on different metal substrates. Our work paves the way to engineer rich interface-induced phenomena, such as proximity effects and moiré superlattices.

Titanium doped kagome superconductor CsV3-xTixSb5 and two distinct phases.

The vanadium-based kagome superconductor CsV3Sb5 has attracted tremendous attention due to its unexcepted anomalous Hall effect (AHE), charge density waves (CDWs), nematicity, and a pseudogap pair density wave (PDW) coexisting with unconventional strong-coupling superconductivity. The origins of CDWs, unconventional superconductivity, and their correlation with different electronic states in this kagome system are of great significance, but so far, are still under debate. Chemical doping in the kagome layer provides one of the most direct ways to reveal the intrinsic physics, but remains unexplored. Here, we report, for the first time, the synthesis of Ti-substituted CsV3Sb5 single crystals and its rich phase diagram mapping the evolution of intertwining electronic states. The Ti atoms directly substitute for V in the kagome layers. CsV3-xTixSb5 shows two distinct superconductivity phases upon substitution. The Ti slightly-substituted phase displays an unconventional V-shaped superconductivity gap, coexisting with weakening CDW, PDW, AHE, and nematicity. The Ti highly-substituted phase has a U-shaped superconductivity gap concomitant with a short-range rotation symmetry breaking CDW, while long-range CDW, twofold symmetry of in-plane resistivity, AHE, and PDW are absent. Furthermore, we also demonstrate the chemical substitution of V atoms with other elements such as Cr and Nb, showing a different modulation on the superconductivity phases and CDWs. These findings open up a way to synthesise a new family of doped CsV3Sb5 materials, and further represent a new platform for tuning the different correlated electronic states and superconducting pairing in kagome superconductors.

One-Step Exfoliation Method for Plasmonic Activation of Large-Area 2D Crystals.

Advanced exfoliation techniques are crucial for exploring the intrinsic properties and applications of 2D materials. Though the recently discovered Au-enhanced exfoliation technique provides an effective strategy for the preparation of large-scale 2D crystals, the high cost of gold hinders this method from being widely adopted in industrial applications. In addition, direct Au contact could significantly quench photoluminescence (PL) emission in 2D semiconductors. It is therefore crucial to find alternative metals that can replace gold to achieve efficient exfoliation of 2D materials. Here, the authors present a one-step Ag-assisted method that can efficiently exfoliate many large-area 2D monolayers, where the yield ratio is comparable to Au-enhanced exfoliation method. Differing from Au film, however, the surface roughness of as-prepared Ag films on SiO2 /Si substrate is much higher, which facilitates the generation of surface plasmons resulting from the nanostructures formed on the rough Ag surface. More interestingly, the strong coupling between 2D semiconductor crystals (e.g., MoS2 , MoSe2 ) and Ag film leads to a unique PL enhancement that has not been observed in other mechanical exfoliation techniques, which can be mainly attributed to enhanced light-matter interaction as a result of extended propagation of surface plasmonic polariton (SPP). This work provides a lower-cost and universal Ag-assisted exfoliation method, while at the same time offering enhanced SPP-matter interactions.

Unveiling the Degradation Mechanism of High-Temperature Superconductor Bi2Sr2CaCu2O8+δ in Water-Bearing Environments.

The physical properties of copper oxide high-temperature superconductors have been studied extensively, such as the band structure and doping effects of Bi2Sr2CaCu2O8+δ (Bi-2212). However, some chemical-related properties of these superconductors are rarely reported, such as their stability in water-bearing environments. Herein, we report experiments combined with ab initio calculations that address the effects of water in contact with Bi-2212. The evolution of Bi-2212 flakes with exposure to water for different time intervals was tested and characterized by optical microscopy (OM), atomic force microscopy (AFM), Raman spectroscopy, transmission electron microscopy (TEM), and electrical measurements. The thickness of Bi-2212 flakes is gradually decreased in water, and some thin flakes can be completely etched away after a few days. The stability of Bi-2212 in other solvents is also evaluated, including alcohol, acetone, HCl, and KOH. The morphology of Bi-2212 flakes is relatively stable in organic solvents. However, the flakes are etched relatively quick in HCl and KOH, especially in an acidic environment. Our results imply that hydrogen ions are primarily responsible for the deterioration of their properties. Both TEM and calculation results demonstrate that the atoms in the Bi-O plane are relatively stable when compared to the inner atoms in Sr-O, Ca-O, and Cu-O planes. This work contributes toward understanding the chemical stability of a Bi-2212 superconducting device in environmental medium, which is important for both fundamental studies and practical applications of copper oxide high-temperature superconductors.

Tracking the nematicity in cuprate superconductors: a resistivity study under uniaxial pressure.

Overshadowing the superconducting dome in hole-doped cuprates, the pseudogap state is still one of the mysteries that no consensus can be achieved. It has been suggested that the rotational symmetry is broken in this state and may result in a nematic phase transition, whose temperature seems to coincide with the onset temperature of the pseudogap stateT∗around optimal doping level, raising the question whether the pseudogap results from the establishment of the nematic order. Here we report results of resistivity measurements under uniaxial pressure on several hole-doped cuprates, where the normalized slope of the elastoresistivityζcan be obtained as illustrated in iron-based superconductors. The temperature dependence ofζalong particular lattice axis exhibits kink feature atTkand shows Curie-Weiss-like behavior above it, which may suggest a spontaneous nematic transition. WhileTkseems to be the same asT∗around the optimal doping and in the overdoped region, they become very different in underdoped La2-xSrxCuO4. Our results suggest that the nematic order, if indeed existing, is an electronic phase within the pseudogap state.

Strong Light-Matter Interactions between Gap Plasmons and Two-Dimensional Excitons under Ambient Conditions in a Deterministic Way.

Strong exciton-plasmon interactions between layered two-dimensional (2D) semiconductors and gap plasmons show a great potential to implement cavity quantum electrodynamics under ambient conditions. However, achieving a robust plasmon-exciton coupling with nanocavities is still very challenging, because the layer area is usually small in the conventional approaches. Here, we report on a robust strong exciton-plasmon coupling between the gap mode of a bowtie and the excitons in MoS2 layers with gold-assisted mechanical exfoliation and nondestructive wet transfer techniques for a large-area layer. Due to the ultrasmall mode volume and strong in-plane field, the estimated effective exciton number contributing to the coupling is largely reduced. With a corrected exciton transition dipole moment, the exciton numbers are extracted as being 40 for the case of a single layer and 48 for eight layers. Our work paves the way to realize strong coupling with 2D materials with a small number of excitons at room temperature.

Persistence of Monoclinic Crystal Structure in 3D Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake Without Structural Phase Transition.

A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for 3D second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the temperature-induced structural phase transition, the monoclinic 1T' structure of MoTe2 is transformed into the orthorhombic Td structure as the temperature is lowered, which hinders the experimental verification and electronic applications of the predicted SOTI state at low temperatures. Here, systematic Raman spectroscopy studies of the exfoliated MoTe2 thin flakes with variable thicknesses at different temperatures, are presented. As a spectroscopic signature of the orthorhombic Td structure of MoTe2 , the out-of-plane vibration mode D at ≈ 125 cm-1 is always visible below a certain temperature in the multilayer flakes thicker than ≈ 27.7 nm, but vanishes in the temperature range from 80 to 320 K when the flake thickness becomes lower than ≈ 19.5 nm. The absence of the out-of-plane vibration mode D in the Raman spectra here demonstrates not only the disappearance of the monoclinic-to-orthorhombic phase transition but also the persistence of the monoclinic 1T' structure in the MoTe2 thin flakes thinner than ≈ 19.5 nm at low temperatures down to 80 K, which may be caused by the high enough density of the holes introduced during the gold-enhanced exfoliation process and exposure to air. The MoTe2 thin flakes with the low-temperature monoclinic 1T' structure provide a material platform for realizing SOTI states in van der Waals materials at low temperatures, which paves the way for developing a new generation of electronic devices based on SOTIs.

Ultrafast evolution of bulk, surface and surface resonance states in photoexcited [Formula: see text].

We use circular dichroism (CD) in time- and angle-resolved photoemission spectroscopy (trARPES) to measure the femtosecond charge dynamics in the topological insulator (TI) [Formula: see text]. We detect clear CD signatures from topological surface states (TSS) and surface resonance (SR) states. In time-resolved measurements, independently from the pump polarization or intensity, the CD shows a dynamics which provides access to the unexplored electronic evolution in unoccupied states of [Formula: see text]. In particular, we are able to disentangle the unpolarized electron dynamics in the bulk states from the spin-textured TSS and SR states on the femtosecond timescale. Our study demonstrates that photoexcitation mainly involves the bulk states and is followed by sub-picosecond transport to the surface. This provides essential details on intra- and interband scattering in the relaxation process of TSS and SR states. Our results reveal the significant role of SRs in the subtle ultrafast interaction between bulk and surface states of TIs.

Genuine electronic structure and superconducting gap structure in (Ba0.6K0.4)Fe2As2 superconductor.

The electronic structure and superconducting gap structure are prerequisites to establish microscopic theories in understanding the superconductivity mechanism of iron-based superconductors. However, even for the most extensively studied optimally-doped (Ba0.6K0.4)Fe2As2, there remain outstanding controversies on its electronic structure and superconducting gap structure. Here we resolve these issues by carrying out high-resolution angle-resolved photoemission spectroscopy (ARPES) measurements on the optimally-doped (Ba0.6K0.4)Fe2As2 superconductor using both Helium lamp and laser light sources. Our results indicate the "flat band" feature observed around the Brillouin zone center in the superconducting state originates from the combined effect of the superconductivity-induced band back-bending and the folding of a band from the zone corner to the center. We found direct evidence of the band folding between the zone corner and the center in both the normal and superconducting state. Our resolution of the origin of the flat band makes it possible to assign the three hole-like bands around the zone center and determine their superconducting gap correctly. Around the zone corner, we observe a tiny electron-like band and an M-shaped band simultaneously in both the normal and superconducting states. The obtained gap size for the bands around the zone corner (~5.5 meV) is significantly smaller than all the previous ARPES measurements. Our results establish a new superconducting gap structure around the zone corner and resolve a number of prominent controversies concerning the electronic structure and superconducting gap structure in the optimally-doped (Ba0.6K0.4)Fe2As2. They provide new insights in examining and establishing theories in understanding superconductivity mechanism in iron-based superconductors.

Anomalous Doping Evolution of Superconductivity and Quasiparticle Interference in Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{10+δ} Trilayer Cuprates.

We use scanning tunneling microscopy to investigate Bi_{2}Sr_{2}Ca_{2}Cu_{3}O_{10+δ} trilayer cuprates from the optimally doped to overdoped regime. We find that the two distinct superconducting gaps from the inner and outer CuO_{2} planes both decrease rapidly with doping, in sharp contrast to the nearly constant T_{C}. Spectroscopic imaging reveals the absence of quasiparticle interference in the antinodal region of overdoped samples, showing an opposite trend to that in single- and double-layer compounds. We propose that the existence of two types of inequivalent CuO_{2} planes and the intricate interaction between them are responsible for these anomalies in trilayer cuprates.

Neutron Spin Resonance in a Quasi-Two-Dimensional Iron-Based Superconductor.

The neutron spin resonance is generally regarded as a key to understanding the magnetically mediated Cooper pairing in unconventional superconductors. Here, we report an inelastic neutron scattering study on the low-energy spin excitations in a quasi-two-dimensional iron-based superconductor KCa_{2}Fe_{4}As_{4}F_{2}. We have discovered a two-dimensional spin resonant mode with downward dispersions, a behavior closely resembling the low branch of the hourglass-type spin resonance in cuprates. While the resonant intensity is predominant by two broad incommensurate peaks near Q=(0.5,0.5) with a sharp energy peak at E_{R}=16 meV, the overall energy dispersion of the mode exceeds the measured maximum total gap Δ_{tot}=|Δ_{k}|+|Δ_{k+Q}|. These results deeply challenge the conventional understanding of the resonance modes as magnetic excitons regardless of underlining pairing symmetry schemes, and it also points out that when the iron-based superconductivity becomes very quasi-two-dimensional, the electronic behaviors are similar to those in cuprates.

Author Correction: Universal mechanical exfoliation of large-area 2D crystals.

An amendment to this paper has been published and can be accessed via a link at the top of the paper.

Universal mechanical exfoliation of large-area 2D crystals.

Two-dimensional materials provide extraordinary opportunities for exploring phenomena arising in atomically thin crystals. Beginning with the first isolation of graphene, mechanical exfoliation has been a key to provide high-quality two-dimensional materials, but despite improvements it is still limited in yield, lateral size and contamination. Here we introduce a contamination-free, one-step and universal Au-assisted mechanical exfoliation method and demonstrate its effectiveness by isolating 40 types of single-crystalline monolayers, including elemental two-dimensional crystals, metal-dichalcogenides, magnets and superconductors. Most of them are of millimeter-size and high-quality, as shown by transfer-free measurements of electron microscopy, photo spectroscopies and electrical transport. Large suspended two-dimensional crystals and heterojunctions were also prepared with high-yield. Enhanced adhesion between the crystals and the substrates enables such efficient exfoliation, for which we identify a gold-assisted exfoliation method that underpins a universal route for producing large-area monolayers and thus supports studies of fundamental properties and potential application of two-dimensional materials.

Emergence of superconductivity from fully incoherent normal state in an iron-based superconductor (Ba0.6K0.4)Fe2As2.

In unconventional superconductors, it is generally believed that understanding the physical properties of the normal state is a pre-requisite for understanding the superconductivity mechanism. In conventional superconductors like niobium or lead, the normal state is a Fermi liquid with a well-defined Fermi surface and well-defined quasipartcles along the Fermi surface. Superconductivity is realized in this case by the Fermi surface instability in the superconducting state and the formation and condensation of the electron pairs (Cooper pairing). The high temperature cuprate superconductors, on the other hand, represent another extreme case that superconductivity can be realized in the underdoped region where there is neither well-defined Fermi surface due to the pseudogap formation nor quasiparticles near the antinodal regions in the normal state. Here we report a novel scenario that superconductivity is realized in a system with well-defined Fermi surface but without quasiparticles along the Fermi surface in the normal state. High resolution laser-based angle-resolved photoemission measurements have been performed on an optimally-doped iron-based superconductor (Ba0.6K0.4)Fe2As2. We find that, while sharp superconducting coherence peaks emerge in the superconducting state on the hole-like Fermi surface sheets, no quasiparticle peak is present in the normal state. Its electronic behaviours deviate strongly from a Fermi liquid system. The superconducting gap of such a system exhibits an unusual temperature dependence that it is nearly a constant in the superconducting state and abruptly closes at Tc. These observations have provided a new platform to study unconventional superconductivity in a non-Fermi liquid system.

Thick Layered Semiconductor Devices with Water Top-Gates: High On-Off Ratio Field-Effect Transistors and Aqueous Sensors.

Layered semiconductors show promise as channel materials for field-effect transistors (FETs). Usually, such devices incorporate solid back or top gate dielectrics. Here, we explore deionized (DI) water as a solution top-gate for field-effect switching of layered semiconductors including SnS2, MoS2, and black phosphorus. The DI water gate is easily fabricated, can sustain rapid bias changes, and its efficient coupling to layered materials provides high on-off current ratios, near-ideal subthreshold swing, and enhanced short-channel behavior even for FETs with thick, bulk-like channels, where such  control is difficult to realize with conventional back gating. Screening by the high-k solution gate eliminates hysteresis due to surface and interface trap states and substantially enhances the field-effect mobility. The onset of water electrolysis sets the ultimate limit to DI water gating at large negative gate bias. Measurements in this regime show promise for aqueous sensing, demonstrated here by the amperometric detection of glucose in aqueous solution. DI water gating of layered semiconductors can be harnessed in research on novel materials and devices, and it may with further development find broad applications in microelectronics and sensing.

New developments in laser-based photoemission spectroscopy and its scientific applications: a key issues review.

The significant progress in angle-resolved photoemission spectroscopy (ARPES) in last three decades has elevated it from a traditional band mapping tool to a precise probe of many-body interactions and dynamics of quasiparticles in complex quantum systems. The recent developments of deep ultraviolet (DUV, including ultraviolet and vacuum ultraviolet) laser-based ARPES have further pushed this technique to a new level. In this paper, we review some latest developments in DUV laser-based photoemission systems, including the super-high energy and momentum resolution ARPES, the spin-resolved ARPES, the time-of-flight ARPES, and the time-resolved ARPES. We also highlight some scientific applications in the study of electronic structure in unconventional superconductors and topological materials using these state-of-the-art DUV laser-based ARPES. Finally we provide our perspectives on the future directions in the development of laser-based photoemission systems.