Assessment of Active Dopants and p-n Junction Abruptness Using In Situ Biased 4D-STEM.

A key issue in the development of high-performance semiconductor devices is the ability to properly measure active dopants at the nanometer scale. In a p-n junction, the abruptness of the dopant profile around the metallurgical junction directly influences the electric field. Here, a contacted nominally symmetric and highly doped (NA = ND = 9 × 1018 cm-3) silicon p-n specimen is studied through in situ biased four-dimensional scanning transmission electron microscopy (4D-STEM). Measurements of electric field, built-in voltage, depletion region width, and charge density are combined with analytical equations and finite-element simulations in order to evaluate the quality of the junction interface. It is shown that all the junction parameters measured are compatible with a linearly graded junction. This hypothesis is also consistent with the evolution of the electric field with bias as well as off-axis electron holography data. These results demonstrate that in situ biased 4D-STEM can allow a better understanding of the electrostatics of semiconductor p-n junctions with nm-scale resolution.

Vibronic effect and influence of aggregation on the photophysics of graphene quantum dots.

Graphene quantum dots, atomically precise nanopieces of graphene, are promising nano-objects with potential applications in various domains such as photovoltaics, quantum light emitters and bio-imaging. Despite their interesting prospects, precise reports on their photophysical properties remain scarce. Here, we report on a study of the photophysics of C96H24(C12H25) graphene quantum dots. A combination of optical studies down to the single molecule level with advanced molecular modelling demonstrates the importance of coupling to vibrations in the emission process. Optical fingerprints for H-like aggregates are identified. Our combined experimental-theoretical investigations provide a comprehensive description of the light absorption and emission properties of nanographenes, which not only represents an essential step towards precise control of sample production but also paves the way for new exciting physics focused on twisted graphenoids.

Practice of electron microscopy on nanoparticles sensitive to radiation damage: CsPbBr3 nanocrystals as a case study.

In-depth and reliable characterization of advanced nanoparticles is crucial for revealing the origin of their unique features and for designing novel functional materials with tailored properties. Due to their small size, characterization beyond nanometric resolution, notably, by transmission electron microscopy (TEM) and associated techniques, is essential to provide meaningful information. Nevertheless, nanoparticles, especially those containing volatile elements or organic components, are sensitive to radiation damage. Here, using CsPbBr3 perovskite nanocrystals as an example, strategies to preserve the native structure of radiation-sensitive nanocrystals in high-resolution electron microscopy studies are presented. Atomic-resolution images obtained using graphene support films allow for a clear comparison with simulation results, showing that most CsPbBr3 nanocrystals are orthorhombic. Low-dose TEM reveals faceted nanocrystals with no in situ formed Pb crystallites, a feature observed in previous TEM studies that has been attributed to radiation damage. Cryo-electron microscopy further delays observable effects of radiation damage. Powder electron diffraction with a hybrid pixel direct electron detector confirms the domination of orthorhombic crystals. These results emphasize the importance of optimizing TEM grid preparation and of exploiting data collection strategies that impart minimum electron dose for revealing the true structure of radiation-sensitive nanocrystals.

A First Wide-Open LDH Structure Hosting InP/ZnS QDs: A New Route Toward Efficient and Photostable Red-Emitting Phosphor.

The architecture of Zn-Al layered double hydroxides (LDHs), organo-modified with bola-amphiphiles molecules, is matching its interlayer space to the size of narrow-band red-emitting InP/ZnS core-shell quantum dots (QDs) to form original high-performance functional organic-inorganic QD-bola-LDH hybrids. The success of size-matching interlayer space (SMIS) approach is confirmed by X-ray diffraction, small angle X-ray scattering (SAXS), TEM, STEM-HAADF, and photoluminescence investigations. The QD-Bola-LDH hybrid exhibits a photoluminescence quantum yield three times higher than that of pristine InP/ZnS QDs and provides an easy dispersion into silicone-based resins, what makes the SMIS approach a change of paradigm compared to intercalation chemistry using common host structures. Moreover, this novel hybrid presents low QD-QD energy transfer comparable to that obtained for QDs in suspension. Composite silicone films incorporating InP/ZnS (0.27 wt%) QD-bola-LDH hybrids further show remarkable improved photostability relative to pristine QDs. An LED overlay consisting of a blue LED chip and silicone films loaded with QD-bola-LDH hybrids and YAG:Ce phosphors exhibits a color rendering index close to 94.

Current-Driven Domain Wall Dynamics in Ferrimagnetic Nickel-Doped Mn4N Films: Very Large Domain Wall Velocities and Reversal of Motion Direction across the Magnetic Compensation Point.

Spin-transfer torque (STT) and spin-orbit torque (SOT) are spintronic phenomena allowing magnetization manipulation using electrical currents. Beyond their fundamental interest, they allow developing new classes of magnetic memories and logic devices, in particular based on domain wall (DW) motion. In this work, we report the study of STT-driven DW motion in ferrimagnetic manganese nickel nitride (Mn4-xNixN) films, in which magnetization and angular momentum compensation can be obtained by the fine adjustment of the Ni content. Large domain wall velocities, approaching 3000 m/s, are measured for Ni compositions close to the angular momentum compensation point. The reversal of the DW motion direction, observed when the compensation composition is crossed, is related to the change of direction of the angular momentum with respect to that of the spin polarization. This is confirmed by the results of ab initio band structure calculations.

How do H2 oxidation molecular catalysts assemble onto carbon nanotube electrodes? A crosstalk between electrochemical and multi-physical characterization techniques.

Molecular catalysts show powerful catalytic efficiency and unsurpassed selectivity in many reactions of interest. As their implementation in electrocatalytic devices requires their immobilization onto a conductive support, controlling the grafting chemistry and its impact on their distribution at the surface of this support within the catalytic layer is key to enhancing and stabilizing the current they produce. This study focuses on molecular bioinspired nickel catalysts for hydrogen oxidation, bound to carbon nanotubes, a conductive support with high specific area. We couple advanced analysis by transmission electron microscopy (TEM), for direct imaging of the catalyst layer on individual nanotubes, and small angle neutron scattering (SANS), for indirect observation of structural features in a relevant aqueous medium. Low-dose TEM imaging shows a homogeneous, mobile coverage of catalysts, likely as a monolayer coating the nanotubes, while SANS unveils a regular nanostructure in the catalyst distribution on the surface with agglomerates that could be imaged by TEM upon aging. Together, electrochemistry, TEM and SANS analyses allowed drawing an unprecedented and intriguing picture with molecular catalysts evenly distributed at the nanoscale in two different populations required for optimal catalytic performance.

Bound Hole States Associated to Individual Vanadium Atoms Incorporated into Monolayer WSe_{2}.

Doping a two-dimensional semiconductor with magnetic atoms is a possible route to induce magnetism in the material. We report on the atomic structure and electronic properties of monolayer WSe_{2} intentionally doped with vanadium atoms by means of scanning transmission electron microscopy and scanning tunneling microscopy and spectroscopy. Most of the V atoms incorporate at W sites. These V_{W} dopants are negatively charged, which induces a localized bound state located 140 meV above the valence band maximum. The overlap of the electronic potential of two charged V_{W} dopants generates additional in-gap states. Eventually, the negative charge may suppress the magnetic moment on the V_{W} dopants.

New approach for the molecular beam epitaxy growth of scalable WSe2 monolayers.

The search for high-quality transition metal dichalcogenides mono- and multi-layers grown on large areas is still a very active field of investigation. Here, we use molecular beam epitaxy to grow WSe2 on 15 × 15 mm large mica in the van der Waals regime. By screening one-step growth conditions, we find that very high temperature (>900 °C) and very low deposition rate (<0.15 Å min-1) are necessary to obtain high quality WSe2 films. The domain size can be as large as 1 µm and the in-plane rotational misorientation of 1.25°. The WSe2 monolayer is also robust against air exposure, can be easily transferred over 1 cm2 on SiN/SiO2 and exhibits strong photoluminescence signal. Moreover, by combining grazing incidence x-ray diffraction and transmission electron microscopy, we could detect the presence of few misoriented grains. A two-dimensional model based on atomic coincidences between the WSe2 and mica crystals allows us to explain the formation of these misoriented grains and gives insight to achieve highly crystalline WSe2.

The valley Nernst effect in WSe2.

The Hall effect can be extended by inducing a temperature gradient in lieu of electric field that is known as the Nernst (-Ettingshausen) effect. The recently discovered spin Nernst effect in heavy metals continues to enrich the picture of Nernst effect-related phenomena. However, the collection would not be complete without mentioning the valley degree of freedom benchmarked by the valley Hall effect. Here we show the experimental evidence of its missing counterpart, the valley Nernst effect. Using millimeter-sized WSe[Formula: see text] mono-multi-layers and the ferromagnetic resonance-spin pumping technique, we are able to apply a temperature gradient by off-centering the sample in the radio frequency cavity and address a single valley through spin-valley coupling. The combination of a temperature gradient and the valley polarization leads to the valley Nernst effect in WSe[Formula: see text] that we detect electrically at room temperature. The valley Nernst coefficient is in good agreement with the predicted value.

Large Current Driven Domain Wall Mobility and Gate Tuning of Coercivity in Ferrimagnetic Mn4N Thin Films.

Spintronics, which is the basis of a low-power, beyond-CMOS technology for computational and memory devices, remains up to now entirely based on critical materials such as Co, heavy metals and rare-earths. Here, we show that Mn4N, a rare-earth free ferrimagnet made of abundant elements, is an exciting candidate for the development of sustainable spintronics devices. Mn4N thin films grown epitaxially on SrTiO3 substrates possess remarkable properties, such as a perpendicular magnetization, a very high extraordinary Hall angle (2%) and smooth domain walls at the millimeter scale. Moreover, domain walls can be moved at record speeds by spin-polarized currents, in absence of spin-orbit torques. This can be explained by the large efficiency of the adiabatic spin transfer torque, due to the conjunction of a reduced magnetization and a large spin polarization. Finally, we show that the application of gate voltages through the SrTiO3 substrates allows modulating the Mn4N coercive field with a large efficiency.

Mapping spin-charge conversion to the band structure in a topological oxide two-dimensional electron gas.

While spintronics has traditionally relied on ferromagnetic metals as spin generators and detectors, spin-orbitronics exploits the efficient spin-charge interconversion enabled by spin-orbit coupling in non-magnetic systems. Although the Rashba picture of split parabolic bands is often used to interpret such experiments, it fails to explain the largest conversion effects and their relationship with the electronic structure. Here, we demonstrate a very large spin-to-charge conversion effect in an interface-engineered, high-carrier-density SrTiO3 two-dimensional electron gas and map its gate dependence on the band structure. We show that the conversion process is amplified by enhanced Rashba-like splitting due to orbital mixing and in the vicinity of avoided band crossings with topologically non-trivial order. Our results indicate that oxide two-dimensional electron gases are strong candidates for spin-based information readout in new memory and transistor designs. Our results also emphasize the promise of topology as a new ingredient to expand the scope of complex oxides for spintronics.

Growth of Nb-Doped Monolayer WS2 by Liquid-Phase Precursor Mixing.

Controlled substitutional doping of two-dimensional transition-metal dichalcogenides (TMDs) is of fundamental importance for their applications in electronics and optoelectronics. However, achieving p-type conductivity in MoS2 and WS2 is challenging because of their natural tendency to form n-type vacancy defects. Here, we report versatile growth of p-type monolayer WS2 by liquid-phase mixing of a host tungsten source and niobium dopant. We show that crystallites of WS2 with different concentrations of substitutionally doped Nb up to 1014 cm-2 can be grown by reacting solution-deposited precursor film with sulfur vapor at 850 °C, reflecting the good miscibility of the precursors in the liquid phase. Atomic-resolution characterization with aberration-corrected scanning transmission electron microscopy reveals that the Nb concentration along the outer edge region of the flakes increases consistently with the molar concentration of Nb in the precursor solution. We further demonstrate that ambipolar field-effect transistors can be fabricated based on Nb-doped monolayer WS2.

Spontaneous intercalation of Ga and In bilayers during plasma-assisted molecular beam epitaxy growth of GaN on graphene on SiC.

The formation of a self-limited metallic bilayer is reported during the growth of GaN by plasma-assisted molecular beam epitaxy on graphene on (0001) SiC. Depending on growth conditions, this layer may consist of either Ga or In, which gets intercalated between graphene and the SiC surface. Diffusion of metal atoms is eased by steps at SiC surface and N plasma induced defects in the graphene layer. Energetically favorable wetting of the (0001) SiC surface by Ga or In is tentatively assigned to the breaking of covalent bonds between (0001) SiC surface and carbon buffer layer. As a consequence, graphene doping and local strain/doping fluctuations decrease. Furthermore, the presence of a metallic layer below GaN opens the way to the development of devices with a spontaneously formed metallic electrode on their back side.

Impact of a van der Waals interface on intrinsic and extrinsic defects in an MoSe2 monolayer.

In this work, we study growth and migration of atomic defects in MoSe2 on graphene using multiple advanced transmission electron microscopy techniques to explore defect behavior in vdW heterostructures. A MoSe2/graphene vdW heterostructure is prepared by a direct growth of both monolayers, thereby attaining an ideal vdW interface between the monolayers. We investigate the intrinsic defects (inversion domains and grain boundaries) in synthesized MoSe2, their evolution amid growth processing steps, and their influence on the formation and movement of extrinsic defects. Electron diffraction identifies a preferential interlayer orientation of 2° between MoSe2 and graphene, which is caused by the presence of intrinsic IBD defects. Extrinsic defects (point and line defects) are generated by in situ electron irradiation in the MoSe2 layer. Our results shed light on how to independently modify the MoSe2 atomic structure in vdW heterostructures for potential utilization in device processing.

Massless Dirac Fermions in ZrTe2 Semimetal Grown on InAs(111) by van der Waals Epitaxy.

Single and few layers of the two-dimensional (2D) semimetal ZrTe2 are grown by molecular beam epitaxy on InAs(111)/Si(111) substrates. Excellent rotational commensurability, van der Waals gap at the interface and moiré pattern are observed indicating good registry between the ZrTe2 epilayer and the substrate through weak van der Waals forces. The electronic band structure imaged by angle resolved photoelectron spectroscopy shows that valence and conduction bands cross at the Fermi level exhibiting abrupt linear dispersions. The latter indicates massless Dirac Fermions which are maintained down to the 2D limit suggesting that single-layer ZrTe2 could be considered as the electronic analogue of graphene.

A novel 2-step ALD route to ultra-thin MoS2 films on SiO2 through a surface organometallic intermediate.

The lack of scalable-methods for the growth of 2D MoS2 crystals, an identified emerging material with applications ranging from electronics to energy storage, is a current bottleneck against its large-scale deployment. We report here a two-step ALD route with new organometallic precursors, Mo(NMe2)4 and 1,2-ethanedithiol (HS(CH2)2SH) which consists in the layer-by-layer deposition of an amorphous surface Mo(iv) thiolate at 50 °C, followed by a subsequent annealing at higher temperature leading to ultra-thin MoS2 nanocrystals (∼20 nm-large) in the 1-2 monolayer range. In contrast to the usual high-temperature growth of 2D dichalcogenides, where nucleation is the key parameter to control both thickness and uniformity, our novel two-step ALD approach enables chemical control over these two parameters, the growth of 2D MoS2 crystals upon annealing being ensured by spatial confinement and facilitated by the formation of a buffer oxysulfide interlayer.

Non-conductive ferromagnets based on core double-shell nanoparticles for radio-electric applications.

Two fabrication schemes of magnetic metal-polymer nanocomposites films are described. The nanocomposites are made of graphene-coated cobalt nanoparticles embedded in a polystyrene matrix. Scheme 1 uses non-covalent chemistry while scheme 2 involves covalent bonding with radicals. Preservation of the net-moment of cobalt and electrical insulation are achieved by means of a core double-shell structure of cobalt-graphene-polystyrene. The graphene shell has two functions: it is a protective layer against metal core oxidation and it serves as the functionalization surface for polymer grafting as well. The polystyrene shell is used as an insulating layer between nanoparticles and improves nanoparticles dispersion inside the polystyrene matrix. The theoretical maximum volume filling ratio estimated at ~30 % is almost reached. The nanocomposites are shown to undergo percolation behavior but retain low conductivity (<1 S/m) at the highest filling ratio reached ~25 % leading to extremely low losses (10(-3)) at high frequency. Such low conductivity values are combined with large magnetization, as high as 0.9 T. Ability for radiofrequency applications is discussed in regards to the obtained magnetization.

No cytotoxicity or genotoxicity of graphene and graphene oxide in murine lung epithelial FE1 cells in vitro.

Graphene and graphene oxide receive much attention these years, because they add attractive properties to a wide range of applications and products. Several studies have shown toxicological effects of other carbon-based nanomaterials such as carbon black nanoparticles and carbon nanotubes in vitro and in vivo. Here, we report in-depth physicochemical characterization of three commercial graphene materials, one graphene oxide (GO) and two reduced graphene oxides (rGO) and assess cytotoxicity and genotoxicity in the murine lung epithelial cell line FE1. The studied GO and rGO mainly consisted of 2-3 graphene layers with lateral sizes of 1-2 µm. GO had almost equimolar content of C, O, and H while the two rGO materials had lower contents of oxygen with C/O and C/H ratios of 8 and 12.8, respectively. All materials had low levels of endotoxin and low levels of inorganic impurities, which were mainly sulphur, manganese, and silicon. GO generated more ROS than the two rGO materials, but none of the graphene materials influenced cytotoxicity in terms of cell viability and cell proliferation after 24 hr. Furthermore, no genotoxicity was observed using the alkaline comet assay following 3 or 24 hr of exposure. We demonstrate that chemically pure, few-layered GO and rGO with comparable lateral size (> 1 µm) do not induce significant cytotoxicity or genotoxicity in FE1 cells at relatively high doses (5-200 µg/ml). Environ. Mol. Mutagen. 57:469-482, 2016. © 2016 The Authors. Environmental and Molecular Mutagenesis Published by Wiley Periodicals, Inc.

Solid-State NMR and DFT Combined for the Surface Study of Functionalized Silicon Nanoparticles.

Silicon nanoparticles (NPs) serve a wide range of optical, electronic, and biological applications. Chemical grafting of various molecules to Si NPs can help to passivate their reactive surfaces, "fine-tune" their properties, or even give them further interesting features. In this work, (1) H, (13) C, and (29) Si solid-state NMR spectroscopy has been combined with density functional theory calculations to study the surface chemistry of hydride-terminated and alkyl-functionalized Si NPs. This combination of techniques yields assignments for the observed chemical shifts, including the contributions resulting from different surface planes, and highlights the presence of physisorbed water. Resonances from near-surface (13) C nuclei were shown to be substantially broadened due to surface disorder and it is demonstrated that in an ambient environment hydride-terminated Si NPs undergo fast back-bond oxidation, whereas long-chain alkyl-functionalized Si NPs undergo slow oxidation. Furthermore, the combination of NMR spectroscopy and DFT calculations showed that the employed hydrosilylation reaction involves anti-Markovnikov addition of the 1-alkene to the surface of the Si NPs.

Effective supergrowth of vertical aligned carbon nanotubes at low temperature and pressure.

We present the generalised supergrowth of single and double walled carbon nanotubes like "water assisted supergrowth" at low temperature (630 degrees C) and pressure (1 Torr) by chemical vapour deposition using various thicknesses of iron supported alumina substrate as a catalyst. Reduced temperature and low pressure synthesis of single walled (SW) and double walled (DW) carbon nanotubes is of interest for their efficient growth into device architectures. Pure SW with 2.5 nm diameter are obtained with 0.37 nm Fe catalyst at 630 degrees C. We demonstrated the decrease of the density versus temperatures and also obtained high density materials (1.4 x 10(12) cm(-2)) at low temperature (580 degrees C). Scanning and transmission electron microscope studies provided information on the height, density of the carpets and the structure and diameter of SW and DW carbon nanotubes, respectively.