RESUMO
Memories based on the insulator-to-metal transition in correlated insulators are promising to overcome the limitations of alternative nonvolatile memory technologies. However, associated performances have been demonstrated so far only on narrow-gap compounds, such as (V0.95Cr0.05)2O3, exhibiting a tight memory window. In the present study, V-substituted Cr2O3 compounds (Cr1-xVx)2O3 have been synthesized and widely investigated in thin films, single crystals, and polycrystalline powders, for the whole range of chemical composition (0 < x < 1). Physicochemical, structural, and optical properties of the annealed magnetron-sputtered thin films are in very good agreement with those of polycrystalline powders. Indeed, all compounds exhibit the same crystalline structure with a cell parameter evolution consistent with a solid solution over the whole range of x values, as demonstrated by X-ray diffraction and Raman scattering. Moreover, the optical band gap of V-substituted Cr2O3 compounds decreases from 3 eV for Cr2O3 to 0 eV for V2O3. In the same way, resistivity is decreased by almost 5 orders of magnitude as the V content x is varying from 0 to 1, similarly in thin films and single crystals. Finally, a reversible resistive switching has been observed for thin films of three selected V contents (x = 0.30, 0.70, and 0.95). Resistive switching performed on MIM devices based on a 50 nm thick (Cr0.30V0.70)2O3 thin film shows a high endurance of 1000 resistive switching cycles and a memory window ROFF/RON higher by 3 orders of magnitude, as compared to (Cr0.05V0.95)2O3. This comprehensive study demonstrates that a large range of memory windows can be reached by tuning the band gap while varying the V content in the (Cr1-xVx)2O3 solid solution. It thus confirms the potential of correlated insulators for memory applications.
RESUMO
Triggering new stable macroscopic orders in materials by ultrafast optical or terahertz pump pulses is a difficult challenge, complicated by the interplay between multiscale microscopic mechanisms, and macroscopic excitation profiles in samples. In particular, the differences between the two types of excitations are still unclear. In this article, we compare the optical response on acoustic timescale of a V2O3 Paramagnetic Metallic (PM) thin film excited by a terahertz (THz) pump or an optical pump, at room temperature. We show that the penetration depth of the deposited energy has a strong influence on the shape of the optical transmission signal, consistent with the modulation of permittivity by the superposition of depth-dependent static strain, and dynamical strain waves travelling back and forth in the sample layer. In particular, the temporal modulation of the optical transmission directly reflects the excitation profile as a function of depth, as well as the sign of the acoustic reflection coefficient between the film and the substrate. The acoustic mismatch between the V2O3 layer and the substrate was also measured. The raw data were interpreted with a one-dimensional analytical model, using three fitting parameters only. These results are discussed in the context of triggering phase transitions by ultrafast pump pulses. To the best of our knowledge, this is the first report of the modulation of the optical transmission of V2O3 with a THz pump within the acoustic timescale.
RESUMO
A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.