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We fabricated ultrathin metal - oxide - semiconductor (MOS) nanocapacitors using atomic layer deposition. The capacitors consist of a bilayer of Al2O3 and Y2O3 with a total thickness of ~10 nm, deposited on silicon substrate. The presence of the two materials, each slab being ~5 nm thick and uniform over a large area, was confirmed with Transmission Electron Microscopy and X-ray photoelectron spectroscopy (XPS). The capacitance in accumulation varied from 1.6 nF (at 1MHz) to ~2.8 nF (at 10 kHz), which is one to two orders of magnitude higher than other nanocapacitors. This high capacitance is attributed to the synergy between the dielectric properties of ultrathin Al2O3 and Y2O3 layers. The electrical properties of the nanocapacitor are stable within a wide range of temperatures, from 25 °C to 150 °C, as indicated by capacitance-voltage (C - V). Since the thickness-to-area ratio is negligible, the nanocapacitor could be simulated as a single parallel plate capacitor in COMSOL Multiphysics, with good agreement between experimental and simulation data. As a proof-of-concept we simulated a MOSFET device with the nanocapacitor gate dielectric, whose drain current is sufficiently high for micro and nanoelectronics integrated circuits, including for applications in sensing.
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Atomic layer deposition (ALD) offers unique capabilities to fabricate atomically engineered porous materials with precise pore tuning and multi-functionalization for diverse applications like advanced membrane separations towards sustainable energy-water systems. However, current ALD technique is inhibited on most non-polar polymeric membranes due to lack of accessible nucleation sites. Here, we report a facile method to efficiently promote ALD coating on hydrophobic surface of polymeric membranes via novel protein activation/sensitization. As a proof of concept, TiO2 ALD-coated membranes activated by bovine serum albumin exhibit remarkable superhydrophilicity, ultralow underwater crude oil adhesion, and robust tolerance to rigorous environments including acid, alkali, saline, and ethanol. Most importantly, excellent cyclable crude oil-in-water emulsion separation performance can be achieved. The mechanism for activation/sensitization is rooted in reactivity for a particular set of amino acids. Furthermore, the universality of protein-sensitized ALD is demonstrated using common egg white, promising numerous potential usages in biomedical engineering, environmental remediation, low-carbon manufacturing, catalysis, and beyond.
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In the presented study, a novel approach for thermal atomic layer deposition (ALD) of Al2O3 thin films using plasma-activated water (PAW) as a co-reactant, replacing traditionally employed deionized (DI) water, is introduced. Utilizing ex situ PAW achieves up to a 16.4% increase in the growth per cycle (GPC) of Al2O3 films, consistent with results from plasma-enhanced atomic layer deposition (PEALD). Time-resolved mass spectrometry (TRMS) revealed disparities in CH4 partial pressures between TMA reactions with DI water and PAW, with PAW demonstrating enhanced reactivity. Reactive oxygen species (ROS), namely H2O2 and O3, are posited to activate Si(100) substrate sites, thereby improving GPC and film quality. Specifically, Al2O3 films grown with PAW pH = 3.1 displayed optimal stoichiometry, reduced carbon content, and an expanded bandgap. This study thus establishes "PAW-ALD" as a descriptor for this ALD variation and highlights the significance of comprehensive assessments of PAW in ALD processes.
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By using a simple device architecture along with a simple process design and a low thermal-budget of a maximum of 100 °C for passivating metal/semiconductor interfaces, a Schottky barrier MOSFET device with a low subthreshold slope of 70 mV dec-1could be developed. This device is enabled after passivation of the metal/silicon interface (found at the source/drain regions) with ultra-thin SiOxfilms, followed by the e-beam evaporation of high- quality aluminum and by using atomic-layer deposition for HfO2as a gate oxide. All of these fabrication steps were designed in a sequential process so that a gate-last recipe could minimize the defect density at the aluminum/silicon and HfO2/silicon interfaces, thus preserving the Schottky barrier height and ultimately, the outstanding performance of the transistor. This device is fully integrated into silicon after standard CMOS-compatible processing, so that it could be easily adopted into front-end-of-line or even in back-end-of-line stages of an integrated circuit, where low thermal budget is required and where its functionality could be increased by developing additional and fast logic.
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The membranes used in bone reconstructions have been the object of investigation in the field of tissue engineering, seeking to improve their mechanical strength and add other properties, mainly the osteopromotive. This study aimed to evaluate the functionalization of collagen membranes, with atomic layer deposition of TiO2 on the bone repair of critical defects in rat calvaria and subcutaneous biocompatibility. A total of 39 male rats were randomized into four groups: blood clot (BC), collagen membrane (COL), COL 150-150 cycles of titania, and COL 600-600 cycles of titania. The defects were created in each calvaria (5 mm in diameter) and covered according to each group; the animals were euthanized at 7, 14, and 28 days. The collected samples were assessed by histometric (newly bone formed, soft tissue area, membrane area, and residual linear defect) and histologic (inflammatory cells and blood cells count) analysis. All data were subjected to statistical analysis (p < 0.05). The COL150 group showed statistically significant differences compared to the other groups, mainly in the analysis of residual linear defects (1.5 ± 0.5 × 106 pixels/µm2 for COL 150, and around 1 ± 0.5 × 106 pixels/µm2 for the other groups) and newly formed bone (1500 ± 1200 pixels/µm for COL 150, and around 4000 pixels/µm for the others) (p < 0.05), demonstrating a better biological behavior in the chronology of defects repair. It is concluded that the collagen membrane functionalized by TiO2 over 150 cycles showed better bioactive potential in treating critical size defects in the rats' calvaria.
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The growing need for increasingly miniaturized devices has placed high importance and demands on nanofabrication technologies with high-quality, low temperatures, and low-cost techniques. In the past few years, the development and recent advances in atomic layer deposition (ALD) processes boosted interest in their use in advanced electronic and nano/microelectromechanical systems (NEMS/MEMS) device manufacturing. In this context, non-thermal plasma (NTP) technology has been highlighted because it allowed the ALD technique to expand its process window and the fabrication of several nanomaterials at reduced temperatures, allowing thermosensitive substrates to be covered with good formability and uniformity. In this review article, we comprehensively describe how the NTP changed the ALD universe and expanded it in device fabrication for different applications. We also present an overview of the efforts and developed strategies to gather the NTP and ALD technologies with the consecutive formation of plasma-assisted ALD (PA-ALD) technique, which has been successfully applied in nanofabrication and surface modification. The advantages and limitations currently faced by this technique are presented and discussed. We conclude this review by showing the atomic layer etching (ALE) technique, another development of NTP and ALD junction that has gained more and more attention by allowing significant advancements in plasma-assisted nanofabrication.
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In the present study, we report on the successful synthesis of hollow iron oxide nanospheres. The hollow Fe3O4 nanospheres were synthesized following a four-step procedure: electrospraying spherical PVP particles, coating these particles with alumina (Al2O3) and hematite (Fe2O3) through atomic layer deposition and, finally, a thermal reduction process to degrade the polymer (PVP) and convert hematite (Fe2O3) into magnetite (Fe3O4). A structural analysis using X-ray diffraction (XRD) confirmed the effectiveness of the thermal reduction process. A morphological analysis confirmed that the four-step procedure allowed for the obtainment of hollow iron oxide nanospheres, even though the reduction process caused a contraction in the diameter of the particles of almost 300 nm, but did not affect the thickness of the walls of the hollow spheres that remained at approximately 15 nm. Magnetic properties of the hollow iron oxide nanospheres enable their use in applications where the agglomeration of magnetic nanostructures in liquid media is commonly not allowed, such as in drug encapsulation and delivery.
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The present study was aimed to develop nitrogen-doped nanostructured ZnO thin films. These films were produced in a sequential procedure involving the atomic layer deposition technique, and a hydrothermal process supported by microwave heating. Employing the atomic layer deposition technique, through self-limited reactions of diethylzinc (DEZn) and H2O, carried out at 3.29 × 10-4atm and 190 °C, a high-quality ZnO seed was grown on a Si (100) substrate, producing a textured film. In a second stage, columnar ZnO nanostructures were grown perpendicularly oriented to the silicon substrate on those films, using a solvothermal process in a microwave heating facility, employing Zn(NO3)2as zinc precursor, while hexamethylenetetramine (HMTA) was used to produce the bridging of Zn2+ions. The consequence of N-doping concentration on the physicochemical properties of ZnO thin films was studied. The manufactured films were structurally analyzed by scanning electron microscopy and x-ray diffraction. Also, x-ray photoelectron spectroscopy, Raman, and UV-vis spectroscopies were used to provide further insight on the effect of nitrogen doping. The N-doped films displayed textured wurtzite-like structures that changes their preferential growth from the (002) to the (100) crystallographic plane, apparently promoted by the increase of nitrogen precursor. It is also shown that nitrogen-doped films undergo a reduction in their bandgap, compared to ZnO. The methodology presented here provides a viable way to perform high-quality N-ZnO nanostructured thin films.
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The chemical, structural, morphological, and optical properties of Al-doped TiO2 thin films, called TiO2/Al2O3 nanolaminates, grown by plasma-enhanced atomic layer deposition (PEALD) on p-type Si <100> and commercial SLG glass were discussed. High-quality PEALD TiO2/Al2O3 nanolaminates were produced in the amorphous and crystalline phases. All crystalline nanolaminates have an overabundance of oxygen, while amorphous ones lack oxygen. The superabundance of oxygen on the crystalline film surface was illustrated by a schematic representation that described this phenomenon observed for PEALD TiO2/Al2O3 nanolaminates. The transition from crystalline to amorphous phase increased the surface hardness and the optical gap and decreased the refractive index. Therefore, the doping effect of TiO2 by the insertion of Al2O3 monolayers showed that it is possible to adjust different parameters of the thin-film material and to control, for example, the mobility of the hole-electron pair in the metal-insulator-devices semiconductors, corrosion protection, and optical properties, which are crucial for application in a wide range of technological areas, such as those used to manufacture fluorescence biosensors, photodetectors, and solar cells, among other devices.
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A search of the recent literature reveals that there is a continuous growth of scientific publications on the development of chemical vapor deposition (CVD) processes for silicon carbide (SiC) films and their promising applications in micro- and nanoelectromechanical systems (MEMS/NEMS) devices. In recent years, considerable effort has been devoted to deposit high-quality SiC films on large areas enabling the low-cost fabrication methods of MEMS/NEMS sensors. The relatively high temperatures involved in CVD SiC growth are a drawback and studies have been made to develop low-temperature CVD processes. In this respect, atomic layer deposition (ALD), a modified CVD process promising for nanotechnology fabrication techniques, has attracted attention due to the deposition of thin films at low temperatures and additional benefits, such as excellent uniformity, conformability, good reproducibility, large area, and batch capability. This review article focuses on the recent advances in the strategies for the CVD of SiC films, with a special emphasis on low-temperature processes, as well as ALD. In addition, we summarize the applications of CVD SiC films in MEMS/NEMS devices and prospects for advancement of the CVD SiC technology.
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An antimicrobial polymeric bilayer structure based on the application of an acrylic coating containing hollow zinc oxide nanotubes over a polymeric substrate was developed in this work. Firstly, zinc oxide nanotubes (ZnONT) were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers followed by polymer removal through calcination with the purpose of obtaining antimicrobial nanostructures with a high specific area. Parameters of electrospinning, ALD, and calcination processes were set in order to obtain successfully hollow zinc oxide nanotubes. Morphological studies through scanning electron microscopy (SEM) and transmission electron microscopy (TEM) microscopies confirmed the morphological structure of ZnONT with an average diameter of 180 nm and thickness of approximately 60 nm. Thermal and X-ray diffraction (XRD) analyses provided evidence that calcination completely removed the polymer, resulting in a crystalline hexagonal wurtzite structure. Subsequently, ZnONT were incorporated into a polymeric coating over a polyethylene extruded film at two concentrations: 0.5 and 1 wt. % with respect to the polymer weight. An antimicrobial analysis of developed antimicrobial materials was performed following JIS Z2801 against Staphylococcus aureus and Escherichia coli. When compared to active materials containing commercial ZnO nanoparticles, materials containing ZnONT presented higher microbial inhibition principally against Gram-negative bacteria, whose reduction was total for films containing 1 wt. % ZnONT. Antiviral studies were also performed, but these materials did not present significant viral reduction.
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The search for and synthesis of new antimicrobial nanostructures is important to reduce microbial incidence that induces infectious diseases and to aid in the antibiotic resistance crisis, which are two of the most pressing issues in global public health. In this work, novel, hollow, calcined titanium dioxide nanospheres (CSTiO2) were successfully synthesized for the first time through the combination of electrospinning and atomic layer deposition techniques. Poly(vinylpyrrolidone) (PVP) electrosprayed spherical particles were double-coated with alumina and titanium dioxide, and after a calcination process, hollow nanospheres were obtained with a radius of approximately 345 nm and shell thickness of 17 nm. The structural characterization was performed using electron microscopy, and X-ray diffraction and small-angle X-ray diffraction evidenced an anatase titanium dioxide crystalline structure. Thermogravimetric analysis and Fourier-transform infrared spectroscopy studies demonstrated the absence of polymer residue after the calcination process. The antimicrobial properties of the developed CSTiO2 hollow nanospheres were evaluated against different bacteria, including resistant E. coli and S. aureus strains, and when compared to commercial TiO2 nanoparticles, CSTiO2 nanospheres exhibited superior performance. In addition, the positive effect of UV irradiation on the antimicrobial activity was demonstrated.
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Titanium dioxide (TiO2) and aluminum oxide (Al2O3) coatings have been investigated in a wide range of bio-applications due to their biodegradation and biocompatibility properties, that are key parameters for their use in the food packaging and biomedical devices fields. The present study evaluates and compares the electrochemical behavior of the non-coated, commercial resin-coated, TiO2-coated and Al2O3-coated aluminum in commercial beer electrolyte. For this, TiO2 and Al2O3 thin films were deposited on aluminum (Al) substrates using atomic layer deposition (ALD). The evaluation of the corrosion barrier layer properties was performed by linear sweep voltammetry (LSV) during 10 min and electrochemical impedance spectroscopy (EIS). In addition, profilometry, grazing incidence X-ray diffractometry (GIXRD), scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FT-IR) analyses were performed to investigate the physical and chemical properties of the pristine and / or corroded samples. TiO2 and Al2O3 films presented an amorphous structure, a morphology that follows Al substrate surface, and a thickness of around 100 nm. Analysis of LSV data showed that ALD coatings promoted a considerable increase in corrosion barrier efficiency being 86.3% for TiO2-coated Al and 80% for Al2O3-coated Al in comparison with 7.1% of commercial resin-coated Al. This is mainly due to the lower electrochemical porosity, 11.4% for TiO2-coated Al and 20.4% for Al2O3-coated Al in comparison with 96% of the resin-coated Al, i.e. an increase of up to twofold in the protection of Al when coated with TiO2 compared to Al2O3. The EIS results allow us to complement the discussions about the reduced corrosion barrier efficiency of the Al2O3 film for beer electrolyte once SEM and FT-IR analyzes did not show drastic changes in both investigated ALD films after the corrosion assays. The above results indicate that ALD TiO2 and Al2O3 films may be a viable alternative to replace the synthetic resin coatings frequently used in aluminum cans of use in the food industry.
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The current photodynamic therapy (PDT) is majorly hindered by the shallow penetration depth and oxygen dependency, limiting its application to deep-seated solid hypoxic tumors. Thus, it is meaningful to develop efficient X-ray mediated PDT system capable of generating reactive oxygen species (ROS) under both the normoxic and hypoxic conditions. Herein, we report the synthesis and characterization of nanocomposite, YAG:Pr@ZnO@PpIX with an amalgamation of UV-emitting Y2.99Pr0.01Al5O12 (YAG:Pr) nanoscintillator, and zinc oxide (ZnO) and protoporphyrin IX (PpIX) as photosensitizers. YAG:Pr surface was coated with a ZnO layer (â¼10â¯nm) by atomic layer deposition, and then PpIX was covalently conjugated via a linker to give YAG:Pr@ZnO@PpIX. The photo- and cathodoluminescence analyses gave the evidences of efficient energy transfer from YAG:Pr to ZnO at â¼320â¯nm, and YAG:Pr@ZnO to PpIX at Soret region (350-450â¯nm). The nanohybrid was able to produce both, Type I and Type II ROS upon direct and indirect photoactivation with UV365nm and UV290nm, respectively. In vitro cytotoxicity of non-activated YAG:Pr@ZnO@PpIX in mouse melanoma cells revealed low toxicity, which significantly enhanced upon photoactivation with UV365nm indicating the photokilling property of the nanohybrid. Overall, our preliminary studies successfully demonstrate the potential of YAG:Pr@ZnO@PpIX to overcome the limited penetration and oxygen-dependency of traditional PDT.
Assuntos
Nanocompostos/química , Fotoquimioterapia , Fármacos Fotossensibilizantes/farmacologia , Espécies Reativas de Oxigênio/metabolismo , Alumínio/química , Alumínio/farmacologia , Animais , Sobrevivência Celular/efeitos dos fármacos , Camundongos , Estrutura Molecular , Tamanho da Partícula , Fármacos Fotossensibilizantes/química , Praseodímio/química , Praseodímio/farmacologia , Protoporfirinas/química , Protoporfirinas/farmacologia , Propriedades de Superfície , Células Tumorais Cultivadas , Ítrio/química , Ítrio/farmacologia , Óxido de Zinco/química , Óxido de Zinco/farmacologiaRESUMO
Magnetic films of magnetite (Fe3O4) with controlled defects, so-called antidot arrays, were synthesized by a new technique called AFIR. AFIR consists of the deposition of a thin film by atomic layer deposition, the generation of square and hexagonal arrays of holes using focused ion beam milling, and the subsequent thermal reduction of the antidot arrays. Magnetic characterizations were carried out by magneto-optic Kerr effect measurements, showing the enhancement of the coercivity for the antidot arrays. AFIR opens a new route to manufacture ordered antidot arrays of magnetic oxides with variable lattice parameters.
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The search for new antimicrobial substances has increased in recent years. Antimicrobial nanostructures are one of the most promising alternatives. In this work, titanium dioxide nanotubes were obtained by an atomic layer deposition (ALD) process over electrospun polyvinyl alcohol nanofibers (PVN) at different temperatures with the purpose of obtaining antimicrobial nanostructures with a high specific area. Electrospinning and ALD parameters were studied in order to obtain PVN with smallest diameter and highest deposition rate, respectively. Chamber temperature was a key factor during ALD process and an appropriate titanium dioxide deposition performance was achieved at 200 °C. Subsequently, thermal and morphological analysis by SEM and TEM microscopies revealed hollow nanotubes were obtained after calcination process at 600 °C. This temperature allowed complete polymer removal and influenced the resulting anatase crystallographic structure of titanium dioxide that positively affected their antimicrobial activities. X-ray analysis confirmed the change of titanium dioxide crystallographic structure from amorphous phase of deposited PVN to anatase crystalline structure of nanotubes. These new nanostructures with very large surface areas resulted in interesting antimicrobial properties against Gram-positive and Gram-negative bacteria. Titanium dioxide nanotubes presented the highest activity against Escherichia coli with 5 log cycles reduction at 200 µg/mL concentration.
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The chemical inertness of carbon nanotubes (CNT) requires some degree of "defect engineering" for controlled deposition of metal oxides through atomic layer deposition (ALD). The type, quantity, and distribution of such defects rules the deposition rate and defines the growth behavior. In this work, we employed ALD to grow titanium oxide (TiO2) on vertically aligned carbon nanotubes (VACNT). The effects of nitrogen doping and oxygen plasma pretreatment of the CNT on the morphology and total amount of TiO2 were systematically studied using transmission electron microscopy, Raman spectroscopy, and thermogravimetric analysis. The induced chemical changes for each functionalization route were identified by X-ray photoelectron and Raman spectroscopies. The TiO2 mass fraction deposited with the same number of cycles for the pristine CNT, nitrogen-doped CNT, and plasma-treated CNT were 8, 47, and 80%, respectively. We demonstrate that TiO2 nucleation is dependent mainly on surface incorporation of heteroatoms and their distribution rather than structural defects that govern the growth behavior. Therefore, selecting the best way to functionalize CNT will allow us to tailor TiO2 distribution and hence fabricate complex heterostructures.