Determining the Electron Scattering from Interfacial Coulomb Scatterers in Two-Dimensional Transistors.

Two-dimensional (2D) transistors are promising for potential applications in next-generation semiconductor chips. Owing to the atomically thin thickness of 2D materials, the carrier scattering from interfacial Coulomb scatterers greatly suppresses the carrier mobility and hampers transistor performance. However, a feasible method to quantitatively determine relevant Coulomb scattering parameters from interfacial long-range scatterers is largely lacking. Here, we demonstrate a method to determine the Coulomb scattering strength and the density of Coulomb scattering centers in InSe transistors by comprehensively analyzing the low-frequency noise and transport characteristics. Moreover, the relative contributions from long-range and short-range scattering in the InSe transistors can be distinguished. This method is employed to make InSe transistors consisting of various interfaces a model system, revealing the profound effects of different scattering sources on transport characteristics and low-frequency noise. Quantitatively accessing the scattering parameters of 2D transistors provides valuable insight into engineering the interfaces of a wide spectrum of ultrathin-body transistors for high-performance electronics.

A TOPAS model for lens-based proton radiography.

Objective.Proton Radiography can be used in conjunction with proton therapy for patient positioning, real-time estimates of stopping power, and adaptive therapy in regions with motion. The modeling capability shown here can be used to evaluate lens-based radiography as an instantaneous proton-based radiographic technique. The utilization of user-friendly Monte Carlo program TOPAS enables collaborators and other users to easily conduct medical- and therapy- based simulations of the Los Alamos Neutron Science Center (LANSCE). The resulting transport model is an open-source Monte Carlo package for simulations of proton and heavy ion therapy treatments and concurrent particle imaging.Approach.The four-quadrupole, magnetic lens system of the 800-MeV proton beamline at LANSCE is modeled in TOPAS. Several imaging and contrast objects were modelled to assess transmission at energies from 230-930 MeV and different levels of particle collimation. At different proton energies, the strength of the magnetic field was scaled according toßγ,the inverse product of particle relativistic velocity and particle momentum.Main results.Materials with high atomic number, Z, (gold, gallium, bone-equivalent) generated more contrast than materials with low-Z (water, lung-equivalent, adipose-equivalent). A 5-mrad collimator was beneficial for tissue-to-contrast agent contrast, while a 10-mrad collimator was best to distinguish between different high-Z materials. Assessment with a step-wedge phantom showed water-equivalent path length did not scale directly according to predicted values but could be mapped more accurately with calibration. Poor image quality was observed at low energies (230 MeV), but improved as proton energy increased, with sub-mm resolution at 630 MeV.Significance.Proton radiography becomes viable for shallow bone structures at 330 MeV, and for deeper structures at 630 MeV. Visibility improves with use of high-Z contrast agents. This modality may be particularly viable at carbon therapy centers with accelerators capable of delivering high energy protons and could be performed with carbon therapy.

Phase Modulation of Self-Gating in Ionic Liquid-Functionalized InSe Field-Effect Transistors.

Understanding the Coulomb interactions between two-dimensional (2D) materials and adjacent ions/impurities is essential to realizing 2D material-based hybrid devices. Electrostatic gating via ionic liquids (ILs) has been employed to study the properties of 2D materials. However, the intrinsic interactions between 2D materials and ILs are rarely addressed. This work studies the intersystem Coulomb interactions in IL-functionalized InSe field-effect transistors by displacement current measurements. We uncover a strong self-gating effect that yields a 50-fold enhancement in interfacial capacitance, reaching 550 nF/cm2 in the maximum. Moreover, we reveal the IL-phase-dependent transport characteristics, including the channel current, carrier mobility, and density, substantiating the self-gating at the InSe/IL interface. The dominance of self-gating in the rubber phase is attributed to the correlation between the intra- and intersystem Coulomb interactions, further confirmed by Raman spectroscopy. This study provides insights into the capacitive coupling at the InSe/IL interface, paving the way to developing liquid/2D material hybrid devices.

Machine learning for proton path tracking in proton computed tomography.

A Machine Learning approach to the problem of calculating the proton paths inside a scanned object in proton Computed Tomography is presented. The method is developed in order to mitigate the loss in both spatial resolution and quantitative integrity of the reconstructed images caused by multiple Coulomb scattering of protons traversing the matter. Two Machine Learning models were used: a forward neural network (NN) and the XGBoost method. A heuristic approach, based on track averaging was also implemented in order to evaluate the accuracy limits on track calculation, imposed by the statistical nature of the scattering. Synthetic data from anthropomorphic voxelized phantoms, generated by the Monte Carlo (MC) Geant4 code, were utilized to train the models and evaluate their accuracy, in comparison to a widely used analytical method that is based on likelihood maximization and Fermi-Eyges scattering model. Both NN and XGBoost model were found to perform very close or at the accuracy limit, further improving the accuracy of the analytical method (by 12% in the typical case of 200 MeV protons on 20 cm of water object), especially for protons scattered at large angles. Inclusion of the material information along the path in terms of radiation length did not show improvement in accuracy for the phantoms simulated in the study. A NN was also constructed to predict the error in path calculation, thus enabling a criterion to filter out proton events that may have a negative effect on the quality of the reconstructed image. By parametrizing a large set of synthetic data, the Machine Learning models were proved capable to bring-in an indirect and time efficient way-the accuracy of the MC method into the problem of proton tracking.

An inhomogeneous most likely path formalism for proton computed tomography.

PURPOSE: Multiple Coulomb scattering (MCS) poses a challenge in proton CT (pCT) image reconstruction. The assumption of straight paths is replaced with Bayesian models of the most likely path (MLP). Current MLP-based pCT reconstruction approaches assume a water scattering environment. We propose an MLP formalism based on accurate determination of scattering moments in inhomogeneous media. METHODS: Scattering power relative to water (RScP) was calculated for a range of human tissues and investigated against relative stopping power (RStP). Monte Carlo simulation was used to compare the new inhomogeneous MLP formalism to the water approach in a slab geometry and a human head phantom. An MLP-Spline-Hybrid method was investigated for improved computational efficiency. RESULTS: A piecewise-linear correlation between RStP and RScP was shown, which may assist in iterative pCT reconstruction. The inhomogeneous formalism predicted Monte Carlo proton paths through a water cube with thick bone inserts to within 1.0 mm for beams ranging from 210 to 230 MeV incident energy. Improvement in accuracy over the conventional MLP ranged from 5% for a 230 MeV beam to 17% for 210 MeV. There was no noticeable gain in accuracy when predicting 200 MeV proton paths through a clinically relevant human head phantom. The MLP-Spline-Hybrid method reduced computation time by half while suffering negligible loss of accuracy. CONCLUSIONS: We have presented an MLP formalism that accounts for material composition. In most clinical cases a water scattering environment can be assumed, however in certain cases of significant heterogeneity the proposed algorithm may improve proton path estimation.

Mechanism for correlation in a coherent electron beam.

The correlation of electron counts from two detectors illuminated by a coherent electron beam is analyzed by associating the path of the electron beam through the lenses with the direct Coulomb interaction between two individual electrons. This is shown to lead to a full statistical description of the electron counts. The dominant contribution to the correlation is found to be due to the trajectory displacement caused by the repulsive Coulomb interaction between the first anode and the cathode tip, and the correlation of electron counts is found to depend on the amount of defocusing on the shift of the virtual source for two electrons within the correlation time. The Coulomb scatterings, which altered the direction of two neighbor electrons, occur during the acceleration, leading to a significant decrease in the electron density. The Coulomb potential with no screening will then cause large-angle scattering of nearest-neighbor electrons within the correlation time. These results are consistent with those obtained by a previous experiment.

Electrothermal Local Annealing via Graphite Joule Heating on Two-Dimensional Layered Transistors.

A simple but powerful device platform for electrothermal local annealing (ELA) via graphite Joule heating on the surface of transition-metal dichalcogenide, is suggested here to sustainably restore intrinsic electrical properties of atomically thin layered materials. Such two-dimensional materials are easily deteriorated by undesirable surface/interface adsorbates and are screened by a high metal-to-semiconductor contact resistance. The proposed ELA allows one to expect a better electrical performance such as an excess electron doping, an enhanced carrier mobility, and a reduced surface traps in a monolayer molybdenum disulfide (MoS2)/graphite heterostructure. The thermal distribution of local heating measured by an infrared thermal microscope and estimated by a finite element calculation shows that the annealing temperature reaches up to >400 K at ambient condition and the high efficiency of site-specific annealing is demonstrated unlike the case of conventional global thermal annealing. This ELA platform can be further promoted as a practical gas sensor application. From an O2 cycling test and a low-frequency noise spectroscopy, the graphite on top of the MoS2 continuously recovers its initial condition from surface adsorbates. This ELA technique significantly improves the stability and reliability of its gas sensing capability, which can be expanded in various nanoscale device applications.

Tunable Mobility in Double-Gated MoTe2 Field-Effect Transistor: Effect of Coulomb Screening and Trap Sites.

There is a general consensus that the carrier mobility in a field-effect transistor (FET) made of semiconducting transition-metal dichalcogenides (s-TMDs) is severely degraded by the trapping/detrapping and Coulomb scattering of carriers by ionic charges in the gate oxides. Using a double-gated (DG) MoTe2 FET, we modulated and enhanced the carrier mobility by adjusting the top- and bottom-gate biases. The relevant mechanism for mobility tuning in this device was explored using static DC and low-frequency (LF) noise characterizations. In the investigations, LF-noise analysis revealed that for a strong back-gate bias the Coulomb scattering of carriers by ionized traps in the gate dielectrics is strongly screened by accumulation charges. This significantly reduces the electrostatic scattering of channel carriers by the interface trap sites, resulting in increased mobility. The reduction of the number of effective trap sites also depends on the gate bias, implying that owing to the gate bias, the carriers are shifted inside the channel. Thus, the number of active trap sites decreases as the carriers are repelled from the interface by the gate bias. The gate-controlled Coulomb-scattering parameter and the trap-site density provide new handles for improving the carrier mobility in TMDs, in a fundamentally different way from dielectric screening observed in previous studies.

Observation of Anomalous Resistance Behavior in Bilayer Graphene.

Our measurement results have shown that bilayer graphene exhibits an unexpected sharp transition of the resistance value in the temperature region 200~250 K. We argue that this behavior originates from the interlayer ripple scattering effect between the top and bottom ripple graphene layer. The inter-scattering can mimic the Coulomb scattering but is strongly dependent on temperature. The observed behavior is consistent with the theoretical prediction that charged impurities are the dominant scatters in bilayer graphene. The resistance increase with increasing perpendicular magnetic field strongly supports the postulate that magnetic field induces an excitonic gap in bilayer graphene. Our results reveal that the relative change of resistance induced by magnetic field in the bilayer graphene shows an anomalous thermally activated property.

Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer Layer.

As the thickness becomes thinner, the importance of Coulomb scattering in two-dimensional layered materials increases because of the close proximity between channel and interfacial layer and the reduced screening effects. The Coulomb scattering in the channel is usually obscured mainly by the Schottky barrier at the contact in the noise measurements. Here, we report low-temperature (T) noise measurements to understand the Coulomb scattering mechanism in the MoS2 channel in the presence of h-BN buffer layer on the silicon dioxide (SiO2) insulating layer. One essential measure in the noise analysis is the Coulomb scattering parameter (αSC) which is different for channel materials and electron excess doping concentrations. This was extracted exclusively from a 4-probe method by eliminating the Schottky contact effect. We found that the presence of h-BN on SiO2 provides the suppression of αSC twice, the reduction of interfacial traps density by 100 times, and the lowered Schottky barrier noise by 50 times compared to those on SiO2 at T = 25 K. These improvements enable us to successfully identify the main noise source in the channel, which is the trapping-detrapping process at gate dielectrics rather than the charged impurities localized at the channel, as confirmed by fitting the noise features to the carrier number and correlated mobility fluctuation model. Further, the reduction in contact noise at low temperature in our system is attributed to inhomogeneous distributed Schottky barrier height distribution in the metal-MoS2 contact region.

The refractive index in electron microscopy and the errors of its approximations.

In numerical calculations for electron diffraction often a simplified form of the electron-optical refractive index, linear in the electric potential, is used. In recent years improved calculation schemes have been proposed, aiming at higher accuracy by including higher-order terms of the electric potential. These schemes start from the relativistically corrected Schrödinger equation, and use a second simplified form, now for the refractive index squared, being linear in the electric potential. The second and higher-order corrections thus determined have, however, a large error, compared to those derived from the relativistically correct refractive index. The impact of the two simplifications on electron diffraction calculations is assessed through numerical comparison of the refractive index at high-angle Coulomb scattering and of cross-sections for a wide range of scattering angles, kinetic energies, and atomic numbers.

High thermoelectricpower factor in graphene/hBN devices.

Fast and controllable cooling at nanoscales requires a combination of highly efficient passive cooling and active cooling. Although passive cooling in graphene-based devices is quite effective due to graphene's extraordinary heat conduction, active cooling has not been considered feasible due to graphene's low thermoelectric power factor. Here, we show that the thermoelectric performance of graphene can be significantly improved by using hexagonal boron nitride (hBN) substrates instead of SiO2 We find the room temperature efficiency of active cooling in the device, as gauged by the power factor times temperature, reaches values as high as 10.35 W⋅m-1⋅K-1, corresponding to more than doubling the highest reported room temperature bulk power factors, 5 W⋅m-1⋅K-1, in YbAl3, and quadrupling the best 2D power factor, 2.5 W⋅m-1⋅K-1, in MoS2 We further show that the Seebeck coefficient provides a direct measure of substrate-induced random potential fluctuations and that their significant reduction for hBN substrates enables fast gate-controlled switching of the Seebeck coefficient polarity for applications in integrated active cooling devices.

Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN Heterostructure.

Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse electronics formed with graphene and transition metal dichalcogenides. However, the h-BN effect on electron doping concentration and Schottky barrier is little known. Here, we report that use of h-BN thin film as a substrate for monolayer MoS2 can induce ∼6.5 × 1011 cm-2 electron doping at room temperature which was determined using theoretical flat band model and interface trap density. The saturated excess electron concentration of MoS2 on h-BN was found to be ∼5 × 1013 cm-2 at high temperature and was significantly reduced at low temperature. Further, the inserted h-BN enables us to reduce the Coulombic charge scattering in MoS2/h-BN and lower the effective Schottky barrier height by a factor of 3, which gives rise to four times enhanced the field-effect carrier mobility and an emergence of metal-insulator transition at a much lower charge density of ∼1.0 × 1012 cm-2 (T = 25 K). The reduced effective Schottky barrier height in MoS2/h-BN is attributed to the decreased effective work function of MoS2 arisen from h-BN induced n-doping and the reduced effective metal work function due to dipole moments originated from fixed charges in SiO2.

Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different Dielectrics.

For transition metal dichalcogenides, the fluctuation of the channel current due to charged impurities is attributed to a large surface area and a thickness of a few nanometers. To investigate current variance at the interface of transistors, we obtain the low-frequency (LF) noise features of MoTe2 multilayer field-effect transistors with different dielectric environments. The LF noise properties are analyzed using the combined carrier mobility and carrier number fluctuation model which is additionally parametrized with an interfacial Coulomb-scattering parameter (α) that varies as a function of the accumulated carrier density (Nacc) and the location of the active channel layer of MoTe2. Our model shows good agreement with the current power spectral density (PSD) of MoTe2 devices from a low to high current range and indicates that the parameter α exhibits a stronger dependence on Nacc with an exponent -γ of -1.18 to approximately -1.64 for MoTe2 devices, compared with -0.5 for Si devices. The raised Coulomb scattering of the carriers, particularly for a low-current regime, is considered to be caused by the unique traits of layered semiconductors such as interlayer coupling and the charge distribution strongly affected by the device structure under a gate bias, which completely change the charge screening effect in MoTe2 multilayer. Comprehensive static and LF noise analyses of MoTe2 devices with our combined model reveal that a chemical-vapor deposited h-BN monolayer underneath MoTe2 channel and the Al2O3 passivation layer have a dissimilar contribution to the reduction of current fluctuation. The three-fold enhanced carrier mobility due to the h-BN is from the weakened carrier scattering at the gate dielectric interface and the additional 30% increase in carrier mobility by Al2O3 passivation is due to the reduced interface traps.

Long- versus Short-Range Scattering in Doped Epitaxial Graphene.

Tuning the electronic properties of graphene by adatom deposition unavoidably introduces disorder into the system, which directly affects the single-particle excitations and electrodynamics. Using angle-resolved photoemission spectroscopy (ARPES) we trace the evolution of disorder in graphene by thallium adatom deposition and probe its effect on the electronic structure. We show that the signatures of quasiparticle scattering in the photoemission spectral function can be used to identify thallium adatoms, although charged, as efficient short-range scattering centers. Employing a self-energy model for short-range scattering, we are able to extract a δ-like scattering potential δ = -3.2 ± 1 eV. Therefore, isolated charged scattering centers do not necessarily act just as good long-range (Coulomb) scatterers but can also act as efficient short-range (δ-like) scatterers; in the case of thallium, this happens with almost equal contributions from both mechanisms.

Two-electron interference in a coherent beam.

The interference between quantum amplitude for two electrons, emitted from two source points, to be detected at two detection points, is a direct result of quantum exchange statistics. Such interference is observed in the coincidence probability, compared with that of statistically independent electrons, by computing the time correlation function from the arrival times of the electrons. When the two detectors are separated by a distance less than the coherence length, the coincidence probability is suppressed for electrons (antibunching) due to the Pauli principle, even though they do not interact with each other. However, electrons are charged particles. The Coulomb potential, which governs the scattering of one charged particle by another, is so long ranged. It is obvious that we must consider the Pauli principle and the Coulomb interactions simultaneously. This paper deals with basic experimental and theoretical investigations of the antibunching behavior of electrons in a free beam by considering the Pauli principle and the direct Coulomb interaction between two individual electrons. The experimentally found dependences are described in a model which considers the Coulomb scattering and theoretical values of correlation signals evaluated by analytical calculations agree with those determined by experiment. A study of the time correlation function from the arrival times of the electrons will lead to an understanding of the physical processes that take place in electron guns.

Benchmark measurements and simulations of dose perturbations due to metallic spheres in proton beams.

Monte Carlo simulations are increasingly used for dose calculations in proton therapy due to its inherent accuracy. However, dosimetric deviations have been found using Monte Carlo code when high density materials are present in the proton beam line. The purpose of this work was to quantify the magnitude of dose perturbation caused by metal objects. We did this by comparing measurements and Monte Carlo predictions of dose perturbations caused by the presence of small metal spheres in several clinical proton therapy beams as functions of proton beam range, spread-out Bragg peak width and drift space. Monte Carlo codes MCNPX, GEANT4 and Fast Dose Calculator (FDC) were used. Generally good agreement was found between measurements and Monte Carlo predictions, with the average difference within 5% and maximum difference within 17%. The modification of multiple Coulomb scattering model in MCNPX code yielded improvement in accuracy and provided the best overall agreement with measurements. Our results confirmed that Monte Carlo codes are well suited for predicting multiple Coulomb scattering in proton therapy beams when short drift spaces are involved.