In Situ Surface Reconstruction toward Planar Heterojunction for Efficient and Stable FAPbI3 Quantum Dot Solar Cells.

Pure-phase α-FAPbI3 quantum dots (QDs) are the focus of an increasing interest in photovoltaics due to their superior ambient stability, large absorption coefficient, and long charge-carrier lifetime. However, the trap states induced by the ligand-exchange process limit the photovoltaic performances. Here, a simple post treatment using methylamine thiocyanate is developed to reconstruct the FAPbI3 -QD film surface, in which a MAPbI3 capping layer with a thickness of 6.2 nm is formed on the film top. This planar perovskite heterojunction leads to a reduced density of trap-states, a decreased band gap, and a facilitated charge carrier transport. As a result, a record high power conversion efficiency (PCE) of 16.23% with negligible hysteresis is achieved for the FAPbI3 QD solar cell, and it retains over 90% of the initial PCE after being stored in ambient environment for 1000 h.

MOF-derived CuxS double-faced-decorated carbon nanosheets as high-performance and stable counter electrodes for quantum dots solar cells.

The development of highly-catalytic counter electrode (CE) materials is vital to the construction of quantum dot-sensitized solar cells (QDSCs) but is still challenging. Here, a novel self-assembly double-faced decorated carbon nanosheets with MOF-derived CuxS nanospheres (DF-CuxS/C NSs) were prepared as high-performance hybrid CEs for improving the catalytic activity towards polysulfide electrolytes and enhancing the performance of QDSCs. It is shown that the MOF-derived CuxS nanospheres disperse well on the surface of the carbon NSs in the obtained DF-CuxS/C NSs hybrids. Electrochemical characterization demonstrated that the DF-CuxS/C NSs with moderate mass ratio exhibited enhanced electrocatalytic activity towards the reduction of the polysulfide redox couple (Sn2-/S2-) and decreased charge transfer resistance at the interface of the CE/electrolyte. Benefitting from the merits of this novel hybrid CE, the power conversion efficiency (PCE) of the CdSeTe QDs-based QDSCs is increased to 9.39%, which is higher than the pristine carrageenan (CA)-derived CEs (5.84%) and Cu-BTC-derived CEs (7.74%). With the further optimization of the substrate, the highest PCE of 11.36% was achieved based on the Ti mesh substrate supported hybrid CE.

Suppressing the Effect of the Wetting Layer through AlAs Capping in InAs/GaAs QD Structures for Solar Cells Applications.

Recently, thin AlAs capping layers (CLs) on InAs quantum dot solar cells (QDSCs) have been shown to yield better photovoltaic efficiency compared to traditional QDSCs. Although it has been proposed that this improvement is due to the suppression of the capture of photogenerated carriers through the wetting layer (WL) states by a de-wetting process, the mechanisms that operate during this process are not clear. In this work, a structural analysis of the WL characteristics in the AlAs/InAs QD system with different CL-thickness has been made by scanning transmission electron microscopy techniques. First, an exponential decline of the amount of InAs in the WL with the CL thickness increase has been found, far from a complete elimination of the WL. Instead, this reduction is linked to a higher shield effect against QD decomposition. Second, there is no compositional separation between the WL and CL, but rather single layer with a variable content of InAlGaAs. Both effects, the high intermixing and WL reduction cause a drastic change in electronic levels, with the CL making up of 1-2 monolayers being the most effective configuration to reduce the radiative-recombination and minimize the potential barriers for carrier transport.

Homojunction Perovskite Quantum Dot Solar Cells with over 1 µm-Thick Photoactive Layer.

The solution-processed solar cells based on colloidal quantum dots (QDs) reported so far generally suffer from poor thickness tolerance and it is difficult for them to be compatible with large-scale solution printing technology. However, the recently emerged perovskite QDs, with unique high defect tolerance, are particularly well-suited for efficient photovoltaics. Herein, efficient CsPbI3 perovskite QD solar cells are demonstrated first with over 1 µm-thick active layer by developing an internal P/N homojunction. Specifically, an organic dopant 2,2'-(perfluoronaphthalene-2,6-diylidene) dimalononitrile (F6TCNNQ) is introduced into CsPbI3 QD arrays to prepare different carrier-type QD arrays. The detailed characterizations reveal successful charge-transfer doping of QDs and carrier-type transformation from n-type to p-type. Subsequently, the P/N homojunction perovskite QD solar cell is assembled using different carrier-type QDs, delivering an enhanced power conversion efficiency of 15.29%. Most importantly, this P/N homojunction strategy realizes remarkable thickness tolerance of QD solar cells, showing a record high efficiency of 12.28% for a 1.2 µm-thick QD active-layer and demonstrating great potential for the future printing manufacturing of QDs solar cells.

High-Efficiency Air-Stable Colloidal Quantum Dot Solar Cells Based on a Potassium-Doped ZnO Electron-Accepting Layer.

High-efficiency colloidal quantum dot (CQD) solar cells (CQDSCs) with improved air stability were developed by employing potassium-modified ZnO as an electron-accepting layer (EAL). The effective potassium modification was achievable by a simple treatment with a KOH solution of pristine ZnO films prepared by a low-temperature solution process. The resulting K-doped ZnO (ZnO-K) exhibited EAL properties superior to those of a pristine ZnO-EAL. The Fermi energy level of ZnO was upshifted, which increased the internal electric field and amplified the depletion region (i.e., charge drift) of the devices. The surface defects of ZnO were effectively passivated by K modification, which considerably suppressed interfacial charge recombination. The CQDSC based on ZnO-K achieved improved power conversion efficiency (PCE) of ≈10.75% ( VOC of 0.67 V, JSC of 23.89 mA cm-2, and fill factor of 0.68), whereas the CQDSC based on pristine ZnO showed PCE of 9.97%. Moreover, the suppressed surface defects of ZnO-K substantially improved long-term stability under air. The device using ZnO-K exhibited superior long-term air storage stability (96% retention after 90 days) compared to that using pristine ZnO (88% retention after 90 days). The ZnO-K-based device also exhibited improved photostability under air. Under continuous light illumination for 600 min, the ZnO-K-based device retained 96% of its initial PCE, whereas the pristine ZnO-based device retained only 67%.

A Resonance-Shifting Hybrid n-Type Layer for Boosting Near-Infrared Response in Highly Efficient Colloidal Quantum Dots Solar Cells.

A new configuration of a plasmonic quantum dots solar structure is proposed. Gold-silver core-shell metal nanoparticles (Au@Ag NCs) are incorporated into the TiO2 layer (Au@Ag NCs-HL) of PbS-based solar cells. The TiO2 layer enables the Au@Ag NCs to have broad plasmonic responses and the external quantum efficiency and absorption of the plasmonic devices are significantly enhanced. The electrical performance of the solar cells is also improved.