Porous Structure Enhances the Longitudinal Piezoelectric Coefficient and Electromechanical Coupling Coefficient of Lead-Free (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3.

The introduction of porosity into ferroelectric ceramics can decrease the effective permittivity, thereby enhancing the open circuit voltage and electrical energy generated by the direct piezoelectric effect. However, the decrease in the longitudinal piezoelectric coefficient (d33) with increasing porosity levels currently limiting the range of pore fractions that can be employed. By introducing aligned lamellar pores into (Ba0.85Ca0.15)(Zr0.1Ti0.9)O3, this paper demonstrates an unusual 22-41% enhancement in the d33 compared to its dense counterpart. This unique combination of high d33 and a low permittivity leads to a significantly improved voltage coefficient (g33), energy harvesting figure of merit (FoM33) and electromechanical coupling coefficient ( k 33 2 $k_{33}^2$ ). The underlying mechanism for the improved properties is demonstrated to be a synergy between the low defect concentration and high internal polarizing field within the porous lamellar structure. This work provides insights into the design of porous ferroelectrics for applications related to sensors, energy harvesters, and actuators.

Long range piezoelectricity effects in van der Waals heterobilayer systems beyond 1000 atoms.

Twist angle is a relevant design and control component for the piezoelectric coefficients of van der Waals (vdW) heterostructures. This theoretical work assesses in high detail the impact of the twist angle on the piezoelectricity of two-dimensional (2D) heterobilayer systems. We expand the density-functional based tight-binding method to predict the piezoelectric coefficients of twisted and corrugated 2D heterobilayer structures with more than 1000 atoms. We showcase the method on hexagonal III-V/transition metal dichalcogenide vdW heterosystems. Our calculations yield a periodic relationship between the in-plane piezoelectric coefficients and the corresponding twist angles, indicating the tunability of the in-plane piezoelectricity. In contrast, the out-of-plane piezoelectricity is not twist angle dependent, but nonlinearly changes with the average interlayer distance.

Lead-Free Piezoelectric Energy Harvester Based on 2D Bismuth Titanate.

The use of two-dimensional (2D) layered materials with a noncentrosymmetric structure dramatically increases the potential of nanoscale electromechanical systems and electronic devices. In this work, liquid-phase exfoliation of bulk bismuth titanate was employed to synthesize atomically thin 2D sheets and fabricate a high-performance piezoelectric energy harvester. The structural and morphological properties of the 2D sheets were analyzed, confirming their phase purity and layer formation. Piezoelectric properties of the 2D sheets were evaluated using Piezoresponse Force Microscopy (PFM), demonstrating a high d33 piezoelectric coefficient of 40 pm/V in a few-layer bismuth titanate nanosheet. A prototype energy harvesting device was fabricated with 2D bismuth titanate as the active material. The piezoelectric response of the fabricated device was recorded at different frequencies and forces, which yielded a maximum d33 of 57.8 pC/N at 1 Hz. Such a solid electromechanical performance at a relatively infinitesimal input response indicates that 2D bismuth titanate can be useful for piezoelectric energy harvesting applications.

Superior Large-Signal Piezoelectric Coefficient in Textured NBT-Based Piezoceramics by Template-Induced Structure and Composition Modulation.

The field-induced-phase transition in (Na1/2Bi1/2)TiO3-based lead-free piezoceramics can be facilitated in the ⟨001⟩-crystallographic orientation, and the templated grain growth is an effective method to align polycrystalline ceramics along with specific directions. However, due to the low texturing degree and undesirable composite effect of the added templates, the textured ceramics using the templated grain growth (TGG) method usually require a higher driving field to trigger the phase transition instead. Here, ⟨001⟩-textured (Na0.5Bi0.5)0.935Ba0.065Ti0.978(Fe0.5Nb0.5)0.022O3 ceramics are prepared through a liquid-phase-assisted TGG process at a low sintering temperature (1000 °C), in which the NaNbO3 (NN) templates induce a strong crystallographic anisotropic structure (a high Lotgering factor of 95%) while dissolving into oriented grains. The dissolution of templates acts as a composition doping and contributes to reducing the driving electric field as proven by the phase-field simulation analysis. Furthermore, electrical and structural characterizations reveal that an increased ionic disorder occurs in the textured ceramic, causing highly dynamic polar nanoregions and a larger reversible phase transition. Thanks to the appropriate structure/composition control, the textured ceramic achieves a large d33* value of 907 pm/V at 40 kV/cm. The high-performance lead-free ceramic under low driving electric field benefits the development of multilayer piezoelectric actuators.

Enhanced Piezoelectric, Ferroelectric, and Electrostrictive Properties of Lead-Free (1-x)BCZT-(x)BCST Electroceramics with Energy Harvesting Capability.

Next-generation electronics and energy technologies can now be developed as a result of the design, discovery, and development of novel, environmental friendly lead (Pb)-free ferroelectric materials with improved characteristics and performance. However, there have only been a few reports of such complex materials' design with multi-phase interfacial chemistry, which can facilitate enhanced properties and performance. In this context, herein, novel lead-free piezoelectric materials (1-x)Ba0.95 Ca0.05 Ti0.95 Zr0.05 O3 -(x)Ba0.95 Ca0.05 Ti0.95 Sn0.05 O3 , are reported, which are represented as (1-x)BCZT-(x)BCST, with demonstrated excellent properties and energy harvesting performance. The (1-x)BCZT-(x)BCST materials are synthesized by high-temperature solid-state ceramic reaction method by varying x in the full range (x = 0.00-1.00). In-depth exploration research is performed on the structural, dielectric, ferroelectric, and electro-mechanical properties of (1-x)BCZT-(x)BCST ceramics. The formation of perovskite structure for all ceramics without the presence of any impurity phases is confirmed by X-ray diffraction (XRD) analyses, which also reveals that the Ca2+ , Zr4+ , and Sn4+ are well dispersed within the BaTiO3 lattice. For all (1-x)BCZT-(x)BCST ceramics, thorough investigation of phase formation and phase-stability using XRD, Rietveld refinement, Raman spectroscopy, high-resolution transmission electron microscopy (HRTEM), and temperature-dependent dielectric measurements provide conclusive evidence for the coexistence of orthorhombic + tetragonal (Amm2 + P4mm) phases at room temperature. The steady transition of Amm2 crystal symmetry to P4mm crystal symmetry with increasing x content is also demonstrated by Rietveld refinement data and related analyses. The phase transition temperatures, rhombohedral-orthorhombic (TR-O ), orthorhombic- tetragonal (TO-T ), and tetragonal-cubic (TC ), gradually shift toward lower temperature with increasing x content. For (1-x)BCZT-(x)BCST ceramics, significantly improved dielectric and ferroelectric properties are observed, including relatively high dielectric constant εr ≈ 1900-3300 (near room temperature), εr ≈ 8800-12 900 (near Curie temperature), dielectric loss, tan δ ≈ 0.01-0.02, remanent polarization Pr ≈ 9.4-14 µC cm-2 , coercive electric field Ec ≈ 2.5-3.6 kV cm-1 . Further, high electric field-induced strain S ≈ 0.12-0.175%, piezoelectric charge coefficient d33 ≈ 296-360 pC N-1 , converse piezoelectric coefficient ( d 33 ∗ ) ave ${( {d_{33}^*} )}_{{\rm{ave}}}$ ≈ 240-340 pm V-1 , planar electromechanical coupling coefficient kp ≈ 0.34-0.45, and electrostrictive coefficient (Q33 )avg ≈ 0.026-0.038 m4 C-2 are attained. Output performance with respect to mechanical energy demonstrates that the (0.6)BCZT-(0.4)BCST composition (x = 0.4) displays better efficiency for generating electrical energy and, thus, the synthesized lead-free piezoelectric (1-x)BCZT-(x)BCST samples are suitable for energy harvesting applications. The results and analyses point to the outcome that the (1-x)BCZT-(x)BCST ceramics as a potentially strong contender within the family of Pb-free piezoelectric materials for future electronics and energy harvesting device technologies.

Piezoelectric Enhancement of Piezoceramic Nanoparticle-Doped PVDF/PCL Core-Sheath Fibers.

Electrospinning is considered to be an efficient method to prepare piezoelectric thin films because of its ability to transform the phase of the polymers. A core-sheath structure can endow fibers with more functions and properties. In this study, fibers with a core-sheath structure were prepared using polyvinylidene fluoride (PVDF) included with nanoparticles (NPs) as the shell layer and polycaprolactone (PCL) as the core layer. Their mechanical and piezoelectric properties were studied in detail. During the course of the electrospinning process, PVDF was demonstrated to increase the amount of its polar phase, with the help of nanoparticles acting as a nucleating agent to facilitate the change. PCL was chosen as a core material because of its good mechanical properties and its compatibility with PVDF. Transmission electron microscope (TEM) assessments revealed that the fibers have a core-sheath structure, and shell layers were loaded with nanoparticles. Mechanical testing showed that the core layer can significantly improve mechanical properties. The XRD patterns of the core-sheath structure fibers indicated the ß phase domain the main component. Piezoelectric testing showed that the doped nanoparticles were able to enhance piezoelectric performances. The increases of mechanical and piezoelectric properties of core-sheath structure fibers provide a feasible application for wearable electronics, which require flexibility and good mechanical properties.

Controlled Growth of Semiconducting ZnO Nanorods for Piezoelectric Energy Harvesting-Based Nanogenerators.

Zinc oxide (ZnO) nanorods have attracted considerable attention in recent years owing to their piezoelectric properties and potential applications in energy harvesting, sensing, and nanogenerators. Piezoelectric energy harvesting-based nanogenerators have emerged as promising new devices capable of converting mechanical energy into electric energy via nanoscale characterizations such as piezoresponse force microscopy (PFM). This technique was used to study the piezoresponse generated when an electric field was applied to the nanorods using a PFM probe. However, this work focuses on intensive studies that have been reported on the synthesis of ZnO nanostructures with controlled morphologies and their subsequent influence on piezoelectric nanogenerators. It is important to note that the diatomic nature of zinc oxide as a potential solid semiconductor and its electromechanical influence are the two main phenomena that drive the mechanism of any piezoelectric device. The results of our findings confirm that the performance of piezoelectric devices can be significantly improved by controlling the morphology and initial growth conditions of ZnO nanorods, particularly in terms of the magnitude of the piezoelectric coefficient factor (d33). Moreover, from this review, a proposed facile synthesis of ZnO nanorods, suitably produced to improve coupling and switchable polarization in piezoelectric devices, has been reported.

Doping Engineering for Optimizing Piezoelectric and Elastic Performance of AlN.

The piezoelectric and elastic properties are critical for the performance of AlN-based 5G RF filters. The improvement of the piezoelectric response in AlN is often accompanied by lattice softening, which compromises the elastic modulus and sound velocities. Optimizing both the piezoelectric and elastic properties simultaneously is both challenging and practically desirable. In this work, 117 X0.125Y0.125Al0.75N compounds were studied with the high-throughput first-principles calculation. B0.125Er0.125Al0.75N, Mg0.125Ti0.125Al0.75N, and Be0.125Ce0.125Al0.75N were found to have both high C33 (>249.592 GPa) and high e33 (>1.869 C/m2). The COMSOL Multiphysics simulation showed that most of the quality factor (Qr) values and the effective coupling coefficient (Keff2) of the resonators made with these three materials were higher than those with Sc0.25AlN with the exception of the Keff2 of Be0.125Ce0.125AlN, which was lower due to the higher permittivity. This result demonstrates that double-element doping of AlN is an effective strategy to enhance the piezoelectric strain constant without softening the lattice. A large e33 can be achieved with doping elements having d-/f- electrons and large internal atomic coordinate changes of du/dε. The doping elements-nitrogen bond with a smaller electronegativity difference (ΔEd) leads to a larger elastic constant C33.

In Situ Synchrotron XRD Characterization of Piezoelectric Al1-xScxN Thin Films for MEMS Applications.

Aluminum scandium nitride (Al1-xScxN) film has drawn considerable attention owing to its enhanced piezoelectric response for micro-electromechanical system (MEMS) applications. Understanding the fundamentals of piezoelectricity would require a precise characterization of the piezoelectric coefficient, which is also crucial for MEMS device design. In this study, we proposed an in situ method based on a synchrotron X-ray diffraction (XRD) system to characterize the longitudinal piezoelectric constant d33 of Al1-xScxN film. The measurement results quantitatively demonstrated the piezoelectric effect of Al1-xScxN films by lattice spacing variation upon applied external voltage. The as-extracted d33 had a reasonable accuracy compared with the conventional high over-tone bulk acoustic resonators (HBAR) devices and Berlincourt methods. It was also found that the substrate clamping effect, leading to underestimation of d33 from in situ synchrotron XRD measurement while overestimation using Berlincourt method, should be thoroughly corrected in the data extraction process. The d33 of AlN and Al0.9Sc0.1N obtained by synchronous XRD method were 4.76 pC/N and 7.79 pC/N, respectively, matching well with traditional HBAR and Berlincourt methods. Our findings prove the in situ synchrotron XRD measurement as an effective method for precise piezoelectric coefficient d33 characterization.

Local Piezoelectric Response of Polymer/Ceramic Nanocomposite Fibers.

Effective converse piezoelectric coefficient (d33,eff) mapping of poly(vinylidene fluoride) (PVDF) nanofibers with ceramic BaTiO3 nanoparticle inclusions obtained by electrospinning was carried out by piezoresponse force microscopy (PFM) in a peculiar dynamic mode, namely constant-excitation frequency-modulation (CE-FM), particularly suitable for the analysis of compliant materials. Mapping of single nanocomposite fibers was carried out to demonstrate the ability of CE-FM-PFM to investigate the nanostructure of semicrystalline polymers well above their glass transition temperature, such as PVDF, by revealing the distribution of piezoelectric activity of the nanofiber, as well as of the embedded nanoparticles employed. A decreased piezoelectric activity at the nanoparticle site compared to the polymeric fiber was found. This evidence can be rationalized in terms of a tradeoff between the dielectric constants and piezoelectric coefficients of the component materials, as well as on the mutual orientation of polar axes.

Quantification of the Electromechanical Measurements by Piezoresponse Force Microscopy.

Piezoresponse force microscopy (PFM) is widely used for characterization and exploration of the nanoscale properties of ferroelectrics. However, quantification of the PFM signal is challenging due to the convolution of various extrinsic and intrinsic contributions. Although quantification of the PFM amplitude signal has received considerable attention, quantification of the PFM phase signal has not been addressed. A properly calibrated PFM phase signal can provide valuable information on the sign of the local piezoelectric coefficient-an important and nontrivial issue for emerging ferroelectrics. In this work, two complementary methodologies to calibrate the PFM phase signal are discussed. The first approach is based on using a standard reference sample with well-known independently measured piezoelectric coefficients, while the second approach exploits the electrostatic sample-cantilever interactions to determine the parasitic phase offset. Application of these methodologies to studies of the piezoelectric behavior in ferroelectric HfO2 -based thin-film capacitors reveals intriguing variations in the sign of the longitudinal piezoelectric coefficient, d33,eff . It is shown that the piezoelectric properties of the HfO2 -based capacitors are inherently sensitive to their thickness, electrodes, as well as deposition methods, and can exhibit wide variations including a d33,eff sign change within a single device.

Design, Fabrication, Structure Optimization and Pressure Sensing Demonstration of COC Piezoelectret Sensor and Sensor Array.

This study reported on the design and fabrication of a pseudo-piezoelectric material (piezoelectret) from cyclic olefin copolymer (COC) based on a micropillar structure. The fabrication feasibility of such structure was explored and piezoelectret with the good piezoelectric activity (characterized by quasi-static piezoelectric coefficient d33) was demonstrated. Response surface method with a central composite design was employed to investigate the effects of the structure parameter on the piezoelectric coefficient d33. An optimal structure design was obtained and was validated by experiments. With the optimal design, d33 can reach an exceptional high value of ~9000 pC/N under low pressure. The charging process and the electrical and electromechanical characteristics were further investigated by experimentation and modeling. We further demonstrated the scalability of the fabrication process and demonstrated the application of these sensors in position specific pressure sensing (pressure mapping).

Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf0.5Zr0.5O2.

Ferroelectric hafnium oxide thin films-the most promising materials in microelectronics' non-volatile memory-exhibit both unconventional ferroelectricity and unconventional piezoelectricity. Their exact origin remains controversial, and the relationship between ferroelectric and piezoelectric properties remains unclear. We introduce a new method to investigate this issue, which consists in a local controlled modification of the ferroelectric and piezoelectric properties within a single Hf0.5Zr0.5O2 capacitor device through local doping and a further comparative nanoscopic analysis of the modified regions. By comparing the ferroelectric properties of Ga-doped Hf0.5Zr0.5O2 thin films with the results of piezoresponse force microscopy and their simulation, as well as with the results of in situ synchrotron X-ray microdiffractometry, we demonstrate that, depending on the doping concentration, ferroelectric Hf0.5Zr0.5O2 has either a negative or a positive longitudinal piezoelectric coefficient, and its maximal value is -0.3 pm/V. This is several hundreds or thousands of times less than those of classical ferroelectrics. These changes in piezoelectric properties are accompanied by either improved or decreased remnant polarization, as well as partial or complete domain switching. We conclude that various ferroelectric and piezoelectric properties, and the relationships between them, can be designed for Hf0.5Zr0.5O2 via oxygen vacancies and mechanical-strain engineering, e.g., by doping ferroelectric films.

Electrical Properties of Aluminum Nitride Thick Films Magnetron Sputtered on Aluminum Substrates.

The realization of a c-axis oriented aluminum nitride thick film on aluminum substrates is a promising step in the development of transducers for applications with a working temperature up to about 600 °C. The present paper deals with the realization of AlN thick films by means of reactive magnetron sputtering with a pulsed DC power supply, operating in continuous mode for 50 h. Two values (0.4 and 0.8) of nitrogen concentration were used; operative pressure and power were set at 0.3 Pa and 150 W, respectively. The thickness of the obtained aluminum nitride films on the aluminum substrate, assessed with a profilometer, varied from 20 to 30 µm. The preferential orientation of AlN crystals was verified by X-ray diffraction. Finally, as the main focus of the investigation, the films underwent electrical characterization by means of an LCR-meter used on a parallel plate capacitor set-up and a test system based on a cantilever beam configuration. AlN conductivity and ε33 permittivity were derived in the 100 Hz-300 kHz frequency range. Magnetron sputtering operation with nitrogen concentration equal to 0.4 resulted in the preferred operative condition, leading to a d31 piezoelectric coefficient, in magnitude, of 0.52 × 10-12 C/N.

Optimizing Piezoelectric Nanocomposites by High-Throughput Phase-Field Simulation and Machine Learning.

Piezoelectric nanocomposites with oxide fillers in a polymer matrix combine the merit of high piezoelectric response of the oxides and flexibility as well as biocompatibility of the polymers. Understanding the role of the choice of materials and the filler-matrix architecture is critical to achieving desired functionality of a composite towards applications in flexible electronics and energy harvest devices. Herein, a high-throughput phase-field simulation is conducted to systematically reveal the influence of morphology and spatial orientation of an oxide filler on the piezoelectric, mechanical, and dielectric properties of the piezoelectric nanocomposites. It is discovered that with a constant filler volume fraction, a composite composed of vertical pillars exhibits superior piezoelectric response and electromechanical coupling coefficient as compared to the other geometric configurations. An analytical regression is established from a linear regression-based machine learning model, which can be employed to predict the performance of nanocomposites filled with oxides with a given set of piezoelectric coefficient, dielectric permittivity, and stiffness. This work not only sheds light on the fundamental mechanism of piezoelectric nanocomposites, but also offers a promising material design strategy for developing high-performance polymer/inorganic oxide composite-based wearable electronics.

Compositionally Graded KNN-Based Multilayer Composite with Excellent Piezoelectric Temperature Stability.

The inherent disadvantage of lead-free potassium sodium niobate (KNN)-based ceramics is the severe temperature instability of piezoelectric charge coefficient (d33 ) caused by the polymorphic phase boundary. Herein, a new concept of structural gradient is proposed by designing compositionally graded multilayer composites with multiple successive phase transitions, to solve the challenge of the inferior temperature stability. The structural gradient ceramics exhibit a superior temperature reliability (d33 remains almost unchanged in the temperature range of 25-100 °C), far outperforming the previously reported KNN counterparts with d33 variation above 27% over the same temperature range. The synergistic contribution of the continuous phase transition, the strain gradient, and the complementary effect of each constituent layer leads to the excellent temperature stability, which is also confirmed by phase-field simulation. These findings are expected to provide a new paradigm for functional material design with outstanding temperature stability.

Spontaneous Polarization Reversal Induced by Proton Exchange in Z-Cut Lithium Niobate α-Phase Channel Waveguides.

The α-phase waveguides directly produced in one fabrication step only are well known for preserving both the excellent nonlinear properties and the ferroelectric domains orientation of lithium niobate substrates. However, by using the piezoresponse force microscopy (PFM), we present a coherent study on ferroelectric dipoles switching induced by the fabrication process of α-phase waveguides on Z-cut congruent lithium niobate (CLN) substrates. The obtained results show that the proton exchange process induces a spontaneous polarization reversal and a reduction in the piezoelectric coefficient d33. The quantitative assessments of the impact of proton exchange on the piezoelectric coefficient d33 have been quantified for different fabrication parameters. By coupling systematic PFM investigation and optical characterizations of α-phase protonated regions and virgin CLN on ±Z surfaces of the samples, we find a very good agreement between index contrast (optical investigation) and d33 reduction (PFM investigations). We clearly show that the increase in the in-diffused proton concentration (increase in index contrast) in protonated zones decreases the piezoelectric coefficient d33 values. Furthermore, having a high interest in nonlinear performances of photonics devices based on PPLN substrates, we have also investigated how deep the spontaneous polarization reversal induced by proton exchange takes place inside the α-phase channel waveguides.

Effects of Oxide Additives on the Phase Structures and Electrical Properties of SrBi4Ti4O15 High-Temperature Piezoelectric Ceramics.

In this work, SrBi4Ti4O15 (SBT) high-temperature piezoelectric ceramics with the addition of different oxides (Gd2O3, CeO2, MnO2 and Cr2O3) were fabricated by a conventional solid-state reaction route. The effects of oxide additives on the phase structures and electrical properties of the SBT ceramics were investigated. Firstly, X-ray diffraction analysis revealed that all these oxides-modified SBT ceramics prepared presented a single SrBi4Ti4O15 phase with orthorhombic symmetry and space group of Bb21m, the change in cell parameters indicated that these oxide additives had diffused into the crystalline lattice of SBT and formed solid solutions with it. The SBT ceramics with the addition of MnO2 achieved a high relative density of up to 97%. The temperature dependence of dielectric constant showed that the addition of Gd2O3 could increase the TC of SBT. At a low frequency of 100 Hz, those dielectric loss peaks appearing around 500 °C were attributed to the space-charge relaxation as an extrinsic dielectric response. The synergetic doping of CeO2 and Cr2O3 could reduce the space-charge-induced dielectric relaxation of SBT. The piezoelectricity measurement and electro-mechanical resonance analysis found that Cr2O3 can significantly enhance both d33 and kp of SBT, and produce a higher phase-angle maximum at resonance. Such an enhanced piezoelectricity was attributed to the further increased orthorhombic distortion after Ti4+ at B-site was substituted by Cr3+. Among these compositions, Sr0.92Gd0.053Bi4Ti4O15 + 0.2 wt% Cr2O3 (SGBT-Cr) presented the best electrical properties including TC = 555 °C, tan δ = 0.4%, kp = 6.35% and d33 = 28 pC/N, as well as a good thermally-stable piezoelectricity that the value of d33 was decreased by only 3.6% after being annealed at 500 °C for 4 h. Such advantages provided this material with potential applications in the high-stability piezoelectric sensors operated below 500 °C.

Ultra-high piezoelectric coefficients and strain-sensitive Curie temperature in hydrogen-bonded systems.

We propose a new approach to obtain ultra-high piezoelectric coefficients that can be infinitely large theoretically, where ferroelectrics with strain-sensitive Curie temperature are necessary. We show the first-principles plus Monte Carlo simulation evidence that many hydrogen-bonded ferroelectrics (e.g. organic PhMDA) can be ideal candidates, which are also flexible and lead-free. Owing to the specific features of hydrogen bonding, their proton hopping barrier will drastically increase with prolonged proton transfer distance, while their hydrogen-bonded network can be easily compressed or stretched due to softness of hydrogen bonds. Their barriers as well as the Curie temperature can be approximately doubled upon a tensile strain as low as 2%. Their Curie temperature can be tuned exactly to room temperature by fixing a strain in one direction, and in another direction, an unprecedented ultra-high piezoelectric coefficient of 2058 pC/N can be obtained. This value is even underestimated and can be greatly enhanced when applying a smaller strain. Aside from sensors, they can also be utilized for converting either mechanical or thermal energies into electrical energies due to high pyroelectric coefficients.

Structural Insights of Electrical Aging in PZT Thin Films as Revealed by In Situ Biasing X-ray Diffraction.

Electrical aging in lead zirconate titanate (PbZrxTi1-xO3) thin films has been intensively studied from a macroscopic perspective. However, structural origins and consequences of such degradation are less documented. In this study, we have used synchrotron radiation to evaluate the behavior of ferroelectric domains by X-ray diffraction (XRD). The sample was loaded with an AC triangular bias waveform between ±10 V with a number of cycle varying from one up to 108. At each step of the aging procedure, XRD spectra had been collected in situ during the application of an electric field on a capacitor. The fine analysis of the (200) pseudo-cubic peak structure allows to separate the evolution of the volume of a/c tetragonal and rhombohedral domains along the electrical biasing. Throughout the aging, both intrinsic and extrinsic responses of tetra and rhombohedral domains are altered, the behavior depending on the observed phase. This methodology opens up new perspectives in the comprehension of the aging effect in ferroelectric thin film.