Development of a 756 nm, 3 W injection-locked cw Ti:sapphire laser.
Appl Opt
; 44(36): 7810-3, 2005 Dec 20.
Article
em En
| MEDLINE
| ID: mdl-16381532
We have developed a 756 nm, 3 W single-frequency cw Ti:sapphire laser by using the technique of injection locking. A cw Ti:sapphire laser in a ring-type configuration was forced to lase unidirectionally by use of an optical diode to prevent a high-power backward laser from disturbing the injection laser. A master laser was amplified by a broad-area laser diode and coupled into a single-mode fiber to generate a 50 mW injection laser with a Gaussian beam profile, which was enough to lock the Ti:sapphire laser at full power of 3 W. Such a high-power single-frequency Ti:sapphire laser enables a watt-level blue or near-ultraviolet single-frequency laser to be generated by frequency doubling.
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MEDLINE
Idioma:
En
Revista:
Appl Opt
Ano de publicação:
2005
Tipo de documento:
Article
País de publicação:
Estados Unidos