(29)Si hyperfine structure of the E(')(alpha) center in amorphous silicon dioxide.
Phys Rev Lett
; 97(13): 135502, 2006 Sep 29.
Article
em En
| MEDLINE
| ID: mdl-17026043
ABSTRACT
We report a study by electron paramagnetic resonance on the E'(alpha) point defect in amorphous silicon dioxide (a-SiO(2)). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the (29)Si hyperfine structure of the E'(alpha) consists of a pair of lines split by approximately 49 mT. On the basis of the experimental results, a microscopic model is proposed for the E'(alpha) center, consisting of a hole trapped in an oxygen vacancy with the unpaired electron sp(3) orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO(2) matrix.
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MEDLINE
Idioma:
En
Revista:
Phys Rev Lett
Ano de publicação:
2006
Tipo de documento:
Article
País de afiliação:
Itália