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Stark tuning of donor electron spins in silicon.
Bradbury, F R; Tyryshkin, A M; Sabouret, Guillaume; Bokor, Jeff; Schenkel, Thomas; Lyon, S A.
Afiliação
  • Bradbury FR; Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA. bradbury@princeton.edu
Phys Rev Lett ; 97(17): 176404, 2006 Oct 27.
Article em En | MEDLINE | ID: mdl-17155489
ABSTRACT
We report Stark shift measurements for 121Sb donor electron spins in silicon using pulsed electron spin resonance. Interdigitated metal gates on a Sb-implanted 28Si epilayer are used to apply the electric fields. Two quadratic Stark effects are resolved a decrease of the hyperfine coupling between electron and nuclear spins of the donor and a decrease in electron Zeeman g factor. The hyperfine term prevails at magnetic fields of 0.35 T, while the g factor term is expected to dominate at higher magnetic fields. We discuss the results in the context of the Kane model quantum computer.
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Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Phys Rev Lett Ano de publicação: 2006 Tipo de documento: Article País de afiliação: Estados Unidos
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Coleções: 01-internacional Base de dados: MEDLINE Tipo de estudo: Prognostic_studies Idioma: En Revista: Phys Rev Lett Ano de publicação: 2006 Tipo de documento: Article País de afiliação: Estados Unidos