Room-temperature broadband emission of an InGaAs/GaAs quantum dots laser.
Opt Lett
; 32(1): 44-6, 2007 Jan 01.
Article
em En
| MEDLINE
| ID: mdl-17167578
ABSTRACT
We report the first demonstration to our knowledge of an ultrabroad emission laser using InGaAs/GaAs quantum dots by cycled monolayer deposition. The device exhibits a lasing wavelength coverage of approximately 40 nm at an approximately 1160 nm center wavelength at room temperature. The broadband signature results from the superposition of quantized lasing states from highly inhomogeneous dots.
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01-internacional
Base de dados:
MEDLINE
Assunto principal:
Arsenicais
/
Nanotecnologia
/
Pontos Quânticos
/
Gálio
/
Índio
/
Lasers
Idioma:
En
Revista:
Opt Lett
Ano de publicação:
2007
Tipo de documento:
Article
País de afiliação:
Estados Unidos