25ps all-optical switching in oxygen implanted silicon-on-insulator microring resonator.
Opt Express
; 16(11): 7693-702, 2008 May 26.
Article
em En
| MEDLINE
| ID: mdl-18545478
ABSTRACT
We present all-optical switching in oxygen ion implanted silicon microring resonators. Time-dependent signal modulation is achieved by shifting resonance wavelengths of microrings through the plasma dispersion effect via femtosecond photogeneration of electron-hole pairs and subsequent trapping at implantation induced defect states. We observe a switching time of 25 ps at extinction ratio of 9 dB and free carrier lifetime of 15 ps for an implantation dose of 7 x 10(12) cm(-2). The influence of implantation dose on the switching speed and additional propagation losses of the silicon waveguide--the latter as a result of implantation induced amorphization--is carefully evaluated and in good agreement with theoretical predictions.
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Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Oxigênio
/
Silício
/
Transdutores
/
Processamento de Sinais Assistido por Computador
/
Desenho Assistido por Computador
/
Óptica e Fotônica
/
Modelos Teóricos
Tipo de estudo:
Prognostic_studies
Idioma:
En
Revista:
Opt Express
Assunto da revista:
OFTALMOLOGIA
Ano de publicação:
2008
Tipo de documento:
Article
País de afiliação:
Alemanha