Your browser doesn't support javascript.
loading
Negative differential resistance: gate controlled and photoconductance enhancement in carbon nanotube intraconnects.
Lee, S W; Kornblit, A; Lopez, D; Rotkin, S V; Sirenko, A A; Grebel, H.
Afiliação
  • Lee SW; Department of Electrical and Computer Engineering, Electronic Imaging Center at NJIT, New Jersey Institute of Technology, Newark, New Jersey 07102, USA.
Nano Lett ; 9(4): 1369-73, 2009 Apr.
Article em En | MEDLINE | ID: mdl-19253997
ABSTRACT
Intraconnects, as-grown single-walled carbon nanotubes bridging two metal electrodes, were investigated as gated structures. We show that even with a seemingly "ohmic" contact at zero gate voltage one observes negative differential resistance (NDR) at nonzero gate bias. Large differential photo conductance (DPC) was associated with the NDR effect raising hopes for the fabrication of novel high-speed optoelectronic devices.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2009 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: Nano Lett Ano de publicação: 2009 Tipo de documento: Article País de afiliação: Estados Unidos