A p-type-doped quantum dot superluminescent LED with broadband and flat-topped emission spectra obtained by post-growth intermixing under a GaAs proximity cap.
Nanotechnology
; 20(5): 055204, 2009 Feb 04.
Article
em En
| MEDLINE
| ID: mdl-19417341
ABSTRACT
Broadband superluminescent light emitting diodes are realized by a post-growth annealing process, on modulation p-doped multiple InAs/InGaAs/GaAs quantum dot layer structures, under a GaAs proximity cap. The device exhibits a large and flat emission with spectral width up to 132 nm at 2 mW. This is mainly attributed to the reduction of the energy separation between the ground state and the excited state, in addition to the optical quality of the intermixed modulation p-doped quantum dot materials being comparable to that of the as-grown sample.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Assunto principal:
Arsenicais
/
Iluminação
/
Nanotecnologia
/
Pontos Quânticos
/
Gálio
/
Medições Luminescentes
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2009
Tipo de documento:
Article
País de afiliação:
Reino Unido