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BaTiO3 doped Na0.5K0.5NbO3 thin films deposited by using eclipse shutter enhanced pulsed laser deposition method.
Choi, J S; Hwang, I R; Hong, S H; Oh, G T; Choi, J A; Jeon, S H; Kang, S O; Yalishev, Vadim Sh; Park, B H; Choi, Chang-Hak; Ahn, Cheol-Woo; Nahm, Sahn; Ahn, Sang Jun.
Afiliação
  • Choi JS; Department of Physics, Konkuk University, Seoul 143-701, Korea.
J Nanosci Nanotechnol ; 9(12): 7354-8, 2009 Dec.
Article em En | MEDLINE | ID: mdl-19908787
We have investigated structural, electrical, and electro-mechanical properties of lead-free piezoelectric BaTiO3 doped Na0.5K0.5NbO3 (BTO-NKN) thin films deposited by pulsed laser deposition (PLD) methods. BTO-NKN thin films have been deposited on La0.5Sr0.5CoO3 (LSCO) bottom electrodes with LaAlO3 (LAO) substrates. X-ray diffraction data have shown that all the BTO-NKN and bottom electrodes are highly oriented with their c-axes normal to the substrates. In order to improve the morphology of BTO-NKN thin films, we have located an eclipse shutter between a target and a substrate. Root-mean-square roughness was changed from 91 nm to 21 nm with eclipse shutter enhanced PLD (E-PLD) method. Furthermore, the enhanced surface morphology leads to the improvement in electrical or electro-mechanical properties mainly due to increased density. Typical capacitance and d33 values of a BTO-NKN film deposited by E-PLD method are 1000 pF and 30 pmN, respectively.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2009 Tipo de documento: Article País de publicação: Estados Unidos
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: J Nanosci Nanotechnol Ano de publicação: 2009 Tipo de documento: Article País de publicação: Estados Unidos