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An ultraclean tip-wear reduction scheme for ultrahigh density scanning probe-based data storage.
Tayebi, Noureddine; Zhang, Yuegang; Chen, Robert J; Tran, Quan; Chen, Rong; Nishi, Yoshio; Ma, Qing; Rao, Valluri.
Afiliação
  • Tayebi N; Intel Corporation, 2200 Mission College Boulevard, Santa Clara, California 95054, United States.
ACS Nano ; 4(10): 5713-20, 2010 Oct 26.
Article em En | MEDLINE | ID: mdl-20929239
ABSTRACT
Probe-based memory devices using ferroelectric media have the potential to achieve ultrahigh data-storage densities under high write-read speeds. However, the high-speed scanning operations over a device lifetime of 5-10 years, which corresponds to a probe tip sliding distance of 5-10 km, can cause the probe tip to mechanically wear, critically affecting its write-read resolution. Here, we show that the long distance tip-wear endurance issue can be resolved by introducing a thin water layer at the tip-media interface-thin enough to form a liquid crystal. By modulating the force at the tip-surface contact, this water crystal layer can act as a viscoelastic material which reduces the stress level on atomic bonds taking part in the wear process. Under our optimized environment, a platinum-iridium probe tip can retain its write-read resolution over 5 km of sliding at a 5 mm/s velocity on a smooth ferroelectric film. We also demonstrate a 3.6 Tbit/inch(2) storage density over a 1 × 1 µm(2) area, which is the highest density ever written on ferroelectric films over such a large area.

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Estados Unidos

Texto completo: 1 Coleções: 01-internacional Base de dados: MEDLINE Idioma: En Revista: ACS Nano Ano de publicação: 2010 Tipo de documento: Article País de afiliação: Estados Unidos