One-dimensional semiconductor nanostructure based thin-film partial composite formed by transfer implantation for high-performance flexible and printable electronics at low temperature.
ACS Nano
; 5(1): 159-64, 2011 Jan 25.
Article
em En
| MEDLINE
| ID: mdl-21174391
ABSTRACT
Having high bending stability and effective gate coupling, the one-dimensional semiconductor nanostructures (ODSNs)-based thin-film partial composite was demonstrated, and its feasibility was confirmed through fabricating the Si NW thin-film partial composite on the poly(4-vinylphenol) (PVP) layer, obtaining uniform and high-performance flexible field-effect transistors (FETs). With the thin-film partial composite optimized by controlling the key steps consisting of the two-dimensional random dispersion on the hydrophilic substrate of ODSNs and the pressure-induced transfer implantation of them into the uncured thin dielectric polymer layer, the multinanowire (NW) FET devices were simply fabricated. As the NW density increases, the on-current of NW FETs increases linearly, implying that uniform NW distribution can be obtained with random directions over the entire region of the substrate despite the simplicity of the drop-casting method. The implantation of NWs by mechanical transfer printing onto the PVP layer enhanced the gate coupling and bending stability. As a result, the enhancements of the field-effect mobility and subthreshold swing and the stable device operation up to a 2.5 mm radius bending situation were achieved without an additional top passivation.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2011
Tipo de documento:
Article
País de publicação:
EEUU
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ESTADOS UNIDOS
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ESTADOS UNIDOS DA AMERICA
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EUA
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UNITED STATES
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UNITED STATES OF AMERICA
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US
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USA