Self-aligned coupled nanowire transistor.
ACS Nano
; 5(9): 6910-5, 2011 Sep 27.
Article
em En
| MEDLINE
| ID: mdl-21815650
ABSTRACT
The integration of multiple functionalities into individual nanoelectronic components is increasingly explored as a means to step up computational power, or for advanced signal processing. Here, we report the fabrication of a coupled nanowire transistor, a device where two superimposed high-performance nanowire field-effect transistors capable of mutual interaction form a thyristor-like circuit. The structure embeds an internal level of signal processing, showing promise for applications in analogue computation. The device is naturally derived from a single NW via a self-aligned fabrication process.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
ACS Nano
Ano de publicação:
2011
Tipo de documento:
Article
País de afiliação:
Reino Unido