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[GaN-based white-light-emitting diodes with low color temperature and high color rendering index].
Wang, Feng; Huang, Xiao-Hui; Wang, Huai-Bing; Liu, Jian-Ping; Fan, Ya-Ming; Zhu, Yun-Zhi; Jin, Zheng.
Afiliação
  • Wang F; Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China. fwang2008@sinano.ac.cn
Guang Pu Xue Yu Guang Pu Fen Xi ; 31(6): 1446-9, 2011 Jun.
Article em Zh | MEDLINE | ID: mdl-21847906
The luminescence properties of high color rendering white LED depending on the proportions of mixed phosphor powders were investigated by adopting green and red phosphors stimulated by a 440 nm InGaN/GaN based blue LED. The results show that when the proportion of A/B type silica gels and green/red phosphor powders is 0.5 : 0.5 : 0.2 : 0.03, two luminance bands are stimulated and their wavelength peaks are 535 and 643 nm, respectively. The minimum color temperature can reach 3 251 K, while the color rendering is as high as 88. 8. Compared with the traditional white LED fabricated by yellow YAG-phosphors-coated high efficiency 460 nm blue LED, the color temperature is lower and the color rendering index can be increased by almost 26%.
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Coleções: 01-internacional Base de dados: MEDLINE Idioma: Zh Revista: Guang Pu Xue Yu Guang Pu Fen Xi Ano de publicação: 2011 Tipo de documento: Article País de afiliação: China País de publicação: China
Buscar no Google
Coleções: 01-internacional Base de dados: MEDLINE Idioma: Zh Revista: Guang Pu Xue Yu Guang Pu Fen Xi Ano de publicação: 2011 Tipo de documento: Article País de afiliação: China País de publicação: China