Taper-free and kinked germanium nanowires grown on silicon via purging and the two-temperature process.
Nanotechnology
; 23(11): 115603, 2012 Mar 23.
Article
em En
| MEDLINE
| ID: mdl-22370486
ABSTRACT
We investigate the growth procedures for achieving taper-free and kinked germanium nanowires epitaxially grown on silicon substrates by chemical vapor deposition. Singly and multiply kinked germanium nanowires consisting of <111> segments were formed by employing a reactant gas purging process. Unlike non-epitaxial kinked nanowires, a two-temperature process is necessary to maintain the taper-free nature of segments in our kinked germanium nanowires on silicon. As an application, nanobridges formed between (111) side walls of V-grooved (100) silicon substrates have been demonstrated.
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1
Coleções:
01-internacional
Base de dados:
MEDLINE
Idioma:
En
Revista:
Nanotechnology
Ano de publicação:
2012
Tipo de documento:
Article