K-shell spectroscopy of silicon ions as diagnostic for high electric fields.
Rev Sci Instrum
; 83(11): 113507, 2012 Nov.
Article
em En
| MEDLINE
| ID: mdl-23206062
ABSTRACT
We developed a detection scheme, capable of measuring X-ray line shape of tracer ions in µm thick layers at the rear side of a target foil irradiated by ultra intense laser pulses. We performed simulations of the effect of strong electric fields on the K-shell emission of silicon and developed a spectrometer dedicated to record this emission. The combination of a cylindrically bent crystal in von Hámos geometry and a CCD camera with its single photon counting capability allows for a high dynamic range of the instrument and background free spectra. This approach will be used in future experiments to study electric fields of the order of TV/m at high density plasmas close to solid density.
Texto completo:
1
Coleções:
01-internacional
Base de dados:
MEDLINE
Tipo de estudo:
Diagnostic_studies
Idioma:
En
Revista:
Rev Sci Instrum
Ano de publicação:
2012
Tipo de documento:
Article
País de afiliação:
Alemanha