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Low-voltage broad-band electroabsorption from thin Ge/SiGe quantum wells epitaxially grown on silicon.
Opt Express ; 21(1): 867-76, 2013 Jan 14.
Artigo em Inglês | MEDLINE | ID: mdl-23388980
We demonstrate electroabsorption contrast greater than 5 dB over the entire telecommunication S- and C-bands with only 1V drive using a new Ge/SiGe QW epitaxy design approach; further, this is demonstrated with the thinnest Ge/SiGe epitaxy to date, using a virtual substrate only 320-nm-thick. We use an eigenmode expansion method to model the optical coupling between SOI waveguides and both vertically and butt-coupled Ge/SiGe devices, and show that this reduction in thickness is expected to lead to a significant improvement in the insertion loss of waveguide-integrated devices.





Texto completo: Disponível Coleções: Bases de dados internacionais Base de dados: MEDLINE Idioma: Inglês Revista: Opt Express Assunto da revista: Oftalmologia Ano de publicação: 2013 Tipo de documento: Artigo País de afiliação: Estados Unidos